碳化矽是製造高功率半導體元件之重要的寬能隙(WBG)半導體材料，然而在晶圓的製造與加工過程當中，容易使晶圓產生缺陷進而影響製成元件之性能，對於碳化矽或矽晶圓質量有負面的影響，因此需要晶圓檢測找出並定義晶圓缺陷以利分析形成缺陷的原因與造成的危害。
本研究將檢測晶圓方法分為破壞性與非破壞性檢測兩者並將焦點放在晶圓的非破壞性檢測，分別探討各檢測方法之成像原理、缺陷分辨能力以及其他領域應用，同時將非破壞性檢測與破壞性檢測方法 KOH 相比，討論兩者檢測的便利性、檢測時間、辨別缺陷的難易度等問題以及探討兩種方法的優劣。除了討論晶圓檢測技術以及缺陷的分析，也統計各國發表的相關文獻數量與各國的檢測技術發展和技術落點。最後說明當前檢測技術遇到的瓶頸和困難，並基於目前理論的檢測方法配合現今的科技發展，討論將人工智慧(AI)融入晶圓檢測的方法，擬定未來在晶圓非破壞性檢測發展的可能。

Silicon carbide is a crucial wide band gap (WBG) material for manufacturing the highpower device. However, it is easy to induce defects while wafer under manufacturing and processing, it will cause some harmful effects to device. Also bad for Si or SiC wafer’s quality. Thus, the requirement of defects inspection, definition for analyzing the disadvantage, and the reason of defects become more important.
The research places wafer inspection ways in two categories, which are destructive testing (DT) and non-destructive testing (NDT). Especially focus on the latter. To discuss the NDT image-forming principle, the ability of defects resolution and other applications respectively. Moreover, comparing wafer NDT and destructive way (KOH) in order to discussing the convenience, inspecting time, the degree of difficulty to distinguish defects in inspection methods, and illustrating the pros and cons.
In addition to the wafer inspection methods and defects analyzation, the research shows the related researches presented from various countries, the development of inspection methods, and the technical placement around the world. Finally, to elaborate the current difficulties of wafer inspection techniques, and to discuss the combination wafer NDT ways with AI which based on current inspection skills and possible development of wafer NDT methods in coming research.

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