本論文乃以發展高效率矽鍺複合晶片太陽能電池製作技術為主題，考量矽晶材料所無法吸收的紅外光波波段，在矽晶之背面串聯鍺晶來吸收此波段能量，最終模式希望製作成的矽晶/鍺晶之異質接合太陽電池，以求達成高效率化。
針對矽鍺複合晶片製作可能的異質接合程序，分別探討矽晶及鍺晶個別使用氫化非晶矽製作成雙面異質接合的品質。實驗結果顯示，以最適化本質非晶矽及摻雜p型n型非晶矽層(暗電導率分別為5.32 × 10-3 S/m及4.91 × 10-6 S/cm) 製作成pn異質接合的矽晶片及鍺晶片其有效載子生命週期分別為1030μs及232.1μs。
針對矽鍺晶片之間的黏合，使用鈀奈米粒子接合層再施以壓合。利用團聯式共聚物均勻塗佈於晶片表面並令其吸附含鈀溶液再經氬氣電漿處理後獲得粒徑約40~60奈米且均勻分散的鈀粒子層，經計算其粒子密度在1 × 1010 cm2(表面覆蓋率為17%)。在此條件下用以作為與另一片矽晶片壓合黏合後，測得黏合層單邊接觸電組約在10 Ω-cm2，此一較高的電阻可能與壓合過程中矽晶表面與鈀粒子之間另有氧化層的生成有關。

The aim of this study is to develop high efficiency silicon/germanium heterojunction solar cells. Considering silicon cells do not produce any current beyond 1100 nm, we serialized with germanium wafer to compensate the absorption of near-IR solar spectra.
First of all, double-sided heterojunction quality of silicon and germanium crystals were analyzed individually using hydrogenated amorphous silicon thin layers. By applying optimized amorphous silicon intrinsic and doped layers (with dark conductivity of 5.32 × 10-3 S/m for n-type and 4.91 × 10-6 S/cm for p-type), the effective carrier lifetimes for crystalline silicon and germanium were 1030 μs and 232.1 μs, respectively.
Secondly, palladium nanoparticle layer, prepared by a wet process together with an argon gas plasma treatment, was used as an adhesive layer to bond Si and Ge wafers. A typical palladium nanoparticle layer, with an average particle size of 40~60 nm and a surface coverage of about 17%, can successfully bond two wafers together but resulted in a contact resistance of 10 Ω-cm2, mostly plausibly due to the formation of surface an surface oxide layer between Si wafer and Pd particles.

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