本論文之研究是以亞硒酸銅銦鎵前驅物進行水系漿料調配，並以刮刀塗佈沉積薄膜。研究內容，主要可分為四部份。第一部分著重於微波合成製程放大，以更大之微波反應器，透過微波功率、反應溫度及時間之調整，可有效合成大量之硒氧化銅銦鎵前驅物，有利於後續漿料製備。
第二部分則是水系漿料之調配，將前驅物粉體與去離子水搭配適當之分散劑混合，並藉由介達電位之測定，找尋合適之分散條件，而固含量的多寡、研磨方式、調整漿料pH值等，均有助於漿料懸浮與分散，以利於塗佈出緻密的薄膜。
第三部分則是將上述之漿料，藉由快速成膜之自動化刮刀塗佈法，進行前驅物薄膜之沉積。此外，前述之分散劑，亦需於成膜後藉適當熱處理方式移除，以免有機物殘留，影響未來本吸收層材料特性。
第四部分則在550 ℃及適當氣氛下，進行前驅物薄膜之還原與硒化，透過高溫鍛燒製備出均勻、緻密之硒化銅銦鎵薄膜。硒化後薄膜，除以電子顯微鏡觀察其表面與截面之形態外，亦運用EDX與XRD，進行組成與晶相特色的鑑定分析，證實均具有純相黃銅礦之結構。藉由探討各製程步驟及其影響，以及理想的操作條件，相信有助於加速未來硒化銅銦鎵薄膜非真空製程的發展與實現。

We try to develop a process to fabrication of thin film CIGS solar cells from aqueous slurry based on copper indium gallium selenite (CIGSO) precursor. The study consists of four major parts. The first part is to synthesize the CIGSO precursor with amorphous structure in large quantity use microwave-assisted hydrothermal route. Through a bigger reactor, we increased the production efficiently by adjusting the output power, reaction time and temperature. The developed method is considered to be a high potential for further applications.
The issues associated with the mixing and dispersion of water-based slurry was performed in the second part. By measuring the Zeta-potential of the solution under different pH values, the influences of different solid contents, dispersants, and mechanical treatment as well as the selection and combination of these factors were closely examined.In the third part, the deposition of the precursor layer by automatic doctor-blade coating machine was performed. A pre-heating process follows to remove organic dispersant from the cast film, so that the film composition and crystal growth will not be deteriorated.
Finally, the dried film was annealed at 550 ℃under the selenium vapor atmosphere to form dense and uniform CIGS absorber layer. We used SEM to see the morphology and the cross-section of films before and after the selenization. EDX and XRD measurement were carried out for composition and crystal structure analysis respectively. The results confirm that the film has a composition close to the designed stoichiometric ratio and exhibits a chalcopyrite crystal structure.Finally, we have successfully developed an efficient process for fabrication of thin film CIGS absorber layer. These characteristics of the developed method open up a new perspective to develop a non-vacuum production for CIGS thin film solar cells.

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