圖案化藍寶石基板(patterned sapphire substrate, PSS)具有降低氮化鎵磊晶薄膜貫穿型差排缺陷密度之效用，然而無圖案區域差排缺陷密度仍高。本研究在圖案化藍寶石基板上嵌入石墨烯界面層，由於石墨烯晶格常數與氮化鎵相近，且有較高的熱傳導率，將可實質改善InGaN LED磊晶材料品質並改善在高功率工作時的熱堆積問題。穿透式電子顯微鏡分析結果指出InGaN LED成長於石墨烯/PSS基板之樣品(Gr-LED)，貫穿型差排可有效被LED磊晶層中AlGaN 應力釋放層消除。從空間解析拉曼光譜儀分析結果發現在傳統PSS基板磊晶之樣品(Ref-LED)GaN E2(high)特徵峰的位置從PSS到表面時有1 cm-1的變化，然而Gr-LED有2.3 cm-1，說明石墨烯減少貫穿型差排外還可以快速釋放GaN的壓縮應變。從EL光譜的量測結果發現Ref-LED 的波長藍移量為1 nm而Gr-LED 只有0.2 nm。經由模擬求出，Ref-LED和Gr-LED的壓電場分別為1.62 和1.22 MV/cm。使用真空腔體隔絕空氣進行晶粒溫度量測，在室溫下注入電流為100 mA時Ref-LED上升了37 K，但Gr-LED 僅上升13 K。從功率對晶粒溫度的曲線圖可以得到Ref-LED 與Gr-LED 的熱阻分別為108.7 和42.7 ºC/W，推測石墨烯界面層對晶粒熱傳導有所改善。從晶粒溫度熱傳導模型可以進一步計算出Gr-LED 的有效散熱面積約為Ref-LED 的2.2倍，可以說明石墨烯界面層能優化LED整體的熱傳導路徑，使LED 的工作溫度降低。石墨烯界面層/PSS 基板能改善氮化鎵在藍寶石基板上晶格不匹配與熱堆積的問題，於高功率的半導體元件具備發展潛力。

The patterned sapphire substrate (PSS) is used for decreasing threading dislocations (TDs) density of InGaN based light-emitting diodes (InGaN LEDs). However, the TDs density is high on the c-plane region (i.e. without pattern region). In this study, a graphene interlayer was grown on the PSS. The InGaN LEDs was grown on graphene interlayer/PSS (Gr-LED) by a metal organic chemical vapor deposition system. The experimental results of spatially-resolved micro-Raman spectra and transmission electron microscope indicated that the strain and TDs density of GaN template can be decreased significantly which compared to InGaN LEDs grown on PSS (Ref-LED). The optimized fitting results show that the piezoelectric field for Ref-LED and Gr-LED are 1.62 and 1.22 MV/cm, respectively. The diminish piezoelectric field of Gr-LED resulted a stable emitting wavelength of electroluminescence spectra in the injection current of 10-100 mA. In addition, the chip temperature of Ref-LED increased from room temperature to 334K (i.e. increasing 37K) at 100-mA injection current. In contrast, the increasing of chip temperature for Gr-LED is 13K. The thermal resistance of Ref-LED and Gr-LED were calculated to be 108.7 and 42.7 ºC/W, respectively. The simulation results indicated that the effective heat transfer area of Gr-LED is ~2.2-folds larger than Ref-LED. Thus, the experimental results also demonstrate that graphene interlayer/PSS is a promising substrate for improving waste heat accumulation in the high-power operation of InGaN LEDs.

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[1] https://www.grandviewresearch.com/.
[2] http://www.yole.fr/,
[3] Z.-M. Chen, Z.-Y. Zheng, Y.-D. Chen, H.-L. Wu, C.-S. Tong, G. Wang, Z.-S. Wu, and H. J. J. o. c. g. Jiang, Threading edge dislocation arrays in epitaxial GaN: Formation, model and thermodynamics, J. Cryst. Growth. (2014).387, p.48.
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