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研究生： 葉子毓
Zih-Yu Ye
論文名稱： 以溫度可視化方法探討化學機械拋光製程中晶圓溫度分布
Investigation of Wafer Temperature Distribution in a CMP Process Using Temperature Visualization Method
指導教授： 田維欣
Wei-Hsin Tien
口試委員: 陳炤彰
Chao-Chang Chen
黃智永
Chih-Yung Huang
學位類別： 碩士
Master
系所名稱： 工程學院 - 機械工程系
Department of Mechanical Engineering
論文出版年： 2021
畢業學年度： 109
語文別： 中文
論文頁數： 125
中文關鍵詞： 化學機械拋光 、溫度可視化 、溫度感測塗料
外文關鍵詞： Chemical-Mechanical Polishing, Temperature visualization, Temperature sensitive paint(TSP)
相關次數： 點閱：313  下載：1 
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    • 在現今半導體晶片製程中，為達到更小的元件關鍵尺寸(Critical Dimension, CD)，化學機械平坦化(Chemical-Mechanical Planarization, CMP)逐漸成為最重要的關鍵製程之一。在CMP製程中重要的參考指標-材料移除率(Material Removal Rate, MRR)，會受到眾多的因素所影響，製程溫度是其中一個重要關鍵因素。本研究建構一套溫度可視化實驗設置，利用量子點對溫度的敏感性製備溫度感應塗料(Temperature Sensitive Paint, TSP)，並將其塗覆於晶圓背面進行表面溫度量測。實驗參數中改變拋光流體、拋光液注入溫度、注入流率、拋光盤轉速以及下壓力，觀察不同參數下的溫度變化，量測本實驗定義之溫度穩定過程及穩態溫度分布情況作探討。在注入流體為去離子水(Deionized Water, DIW)的實驗中，其穩定時間約為25秒。在77℃的注入溫度下，從溫度分布圖中可以看到相對高溫區最先產生在晶圓後緣處並隨後擴散到其他區域，而當常溫DIW注入時，高溫區的產生反而由從晶圓前緣處開始。此差異之原因在於DIW從晶圓後緣處進入到晶圓下方，原先產生摩擦熱的區域熱量被DIW帶走，導致晶圓後緣部分溫度較低。當使用常溫DIW注入時，50 ml/min的注入流率相對於180 ml/min，晶圓平均溫度穩定上升7.7℃。在注入流體為C8902的實驗中，晶圓之溫度需要45秒穩定，與DIW相互比較的實驗下，穩定溫度表現上C8902高DIW約5.8~6.8℃。在溫度分布上，最先產生相對高溫區的位置落在晶圓後緣區，對應到注入溫度實驗結果，進入到晶圓下方的區域因為C8902含有的化學物質與晶圓反應，加上砥粒在晶
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    圓及拋光墊間的摩擦，因此導致晶圓後緣部分溫度較高。DIW與C8902在不同參數實驗中，都呈現出較大下壓力者晶圓溫度較高，較高的拋光盤轉速晶圓溫度也相對較高。

    In modern semiconductor fabrication process, CMP (Chemical-Mechanical Planarization) gradually becomes one of the key process to achieve lower device critical dimension (CD). Process temperature is one of the crucial factor affecting the most important performance index, MRR(Material Removal Rate) in a CMP process. In this study, an experimental setup to visualize wafer surface temperature during the CMP process was constructed. By applying TSP (Temperature Sensitive Paint) made of quantum dots on the backside of the wafer, measured emission light intensity of the TSP can be converted to temperature. Process parameters investigated in this study include types of slurry, slurry injection temperature, slurry injection flow rate, platen rotating speed and downforce. The start-up temperature evolution and steady-state temperature distribution were measured and discussed in detail. To investigate the pure mechanical polishing effects, the DIW(Deionized Water) is used as the slurry. The time to achieve the steady-state temperature in DIW cases is 25 seconds. At high injection temperature of 77℃, the results show that temperature increase starts from trailing edge and spread to leading edge, while the results of injection temperature at room temperature show the opposite trends. These results indicate the route of the slurry flow
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    into wafer area, and the heat transfer route of the pure friction during the process. Change of the injection flow rate from 50 ml/min to180 ml/min cause a temperature rise about 7.7℃. With the slurry using C8902 for copper CMP, the time to reach steady-state is about 45 seconds, and the high temperature zones starts from the trailing edge. This is due to the reaction heat and friction heat generated by C8902 slurry and its abrasive grains along the slurry transfer route to the wafer. Comparison of the results of DIW and C8902 show that the steady-state temperature for the C8902 cases are higher than the DIW cases by 5.8 ~ 6.8℃. The results of varying process parameters show that in both DIW and C8902 cases, the higher down force and higher platen speed cause higher steady-state temperature.

    摘要 .............................................................................................................................2 Abstract........................................................................................................................4 圖目錄 .........................................................................................................................9 表目錄 .......................................................................................................................13 第一章 緒論............................................................................................................14 1.1 研究背景....................................................................................................14 1.2 文獻回顧....................................................................................................16 1.2.1化學機械拋光製程之實驗觀測................................................................18 1.2.2溫度對於化學機械拋光製程之效應........................................................22 1.2.3溫度感測塗料(Temperature Sensitive Paint).............................................25 1.2.4小結...........................................................................................................28 1.3 研究目的....................................................................................................28 1.4 論文架構....................................................................................................28 第二章 實驗原理與方法..........................................................................................29 2.1 溫度感測塗料之製備 ................................................................................29 2.1.1 溫度感測塗料與原理...............................................................................29 2.1.2 溫度感測塗料量測方法...........................................................................33 2.1.3 溫度感測塗料之溫度校正曲線...............................................................34 2.1.4 溫度感測塗料之製作...............................................................................35 2.1.5 溫度感測塗料之溫度校正曲線製作.......................................................41 2.2 實驗硬體設置............................................................................................47 2.2.1 拋光墊與晶圓銜接環之設計...................................................................49 2.2.2 下壓力設置..............................................................................................54 2.2.3拋光液注入系統........................................................................................55 2.2.4 拋光液之調配...........................................................................................57 2.3 影像資料後處理........................................................................................59 2.3.1 TSP校正曲線之影像後處理....................................................................59 8 2.3.2 CMP製程中之影像後處理.......................................................................68 2.4 溫度不準度分析........................................................................................74 2.5 實驗參數規劃............................................................................................75 第三章 實驗結果......................................................................................................77 3.1 DIW為拋光液之實驗結果..............................................................................77 3.1.1 注入溫度之影響.......................................................................................77 3.1.2 注入流率之影響.......................................................................................82 3.1.3不同實驗參數之影響................................................................................87 3.1.4 小結..........................................................................................................96 3.2 C8902為拋光液之實驗結果...........................................................................97 3.2.1 不同實驗參數之影響...............................................................................97 3.2.2 C8902對晶圓的材料移除率..................................................................109 3.2.3 小結........................................................................................................110 3.3實驗結果討論................................................................................................111 3.3.1 DIW與C8902實驗結果比較................................................................111 3.3.2 本實驗研究之限制.................................................................................114 第四章 結論與建議................................................................................................120 4.1 結論...............................................................................................................120 4.2 建議及未來工作...........................................................................................121 參考資料 .................................................................................................................123

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