本篇論文研究以Al作為上下電極，使用ZrO2以及NiO作為主要之中間層，製備
電阻式記憶體元件，並透過調節ZrO2與NiO之比例以及鍍膜時氧氣之通量來改善元
件之性質。
當元件之介電層使用ZrO2時，透過調整濺鍍ZrO2之氧氣通量以及薄膜厚度，可
以影響元件Forming process之電壓。本實驗使用氧氣通量較低之鍍膜條件以及較薄
之ZrO2厚度可以降低Forming process之電壓。透過導電機制分析，Al/ZrO2/Al之
Forming process可能與下電極所形成之原生氧化層有關。
使用各種氧氣通量製備ZrO2，Al/ZrO2/Al元件均能展現出電阻切換之性質，在
本實驗氧氣通量最低之條件下，元件顯示出高低電阻值差距隨掃描次數縮小之情
形。在各種氧氣通量下，特徵電壓值均有重疊之現象。
以各種NiO之混合量製備Al/ZrO2-NiO/Al元件進行量測，可以發現在各種氧氣通
量以及NiO之混合量下，特徵電壓值重疊之現象均能獲得改善，但高低電阻值隨掃
描次數縮小之情形更為明顯，使用更高之氧氣通量製備元件則可以改善此現象。由
導電機制分析可以發現，NiO之含量與導電機制之變化有關，推測NiO應有參與元件
之導電機制

This thesis focuses on the investigation of RRAM (Resistive Switching Random
Accessing Memory) using ZrO2 and ZrO2-NiO thin films as dielectric layer and Al as
bottom and top electrodes. Performance of the RRAM can be improved by adjusting the
amount of oxygen or NiO in the dielectric thin film.
Through the manipulation of the oxygen content and the thickness of ZrO2 thin films,
voltage of forming process could be reduced. Studying of conducting mechanism shows
that the forming process might be related with the presence of native oxide of Al bottom
electrode.
Al/ZrO2/Al could successfully achieve resistive switching using variety of oxygen
contents, However, the difference of the high and low resistance in repeated resistive
switching would be reduced using the lowest content of oxygen content in this
experiment. Vset and Vreset are overlapped no mater what oxygen content were used in the
ZrO2 films.
The problem of overlapping of Vset and Vreset could be solved when Al/ZrO2-NiO/Al
were prepared by mixing up NiO with ZrO2. The difference of the high and low
resistance in repeated resistive switching would be reduced, and it is solved by using
higher oxygen content. Furthermore, NiO may be present in conducting path and change
the conducting mechanism.

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