本研究利用改良式溶膠-凝膠(sol-gel)法製備鋯鈦酸鉛(PZT)粉末，並使用低溫CO2雷射退火製程於SUS 430不鏽鋼基板上鍍製PZT鐵電厚膜。
首先，利用傳統爐管於550℃製備PZT粉末(平均粒徑大小194nm)，再經以改良式sol-gel法旋鍍於SUS 430不銹鋼基材上，使得元件結構為PZT(5-15μm) /LSMO(0.2μm)/SUS 430；當PZT膜厚提升至15μm可大幅降低不鏽鋼基材對雷射能量反射的影響，而能有效地吸收CO2雷射能量，於較低溫度880℃燒結。元件呈現緻密而均勻的微觀結構，其殘留極化Pr值可達21.71μC/cm2。實驗中，經由雷射反射功率可推測出CO2雷射對於PZT厚膜的穿透深度約為36.5μm。
此外，利用微波加熱方式可於450℃低溫快速退火製備出具完整鈣鈦礦(perovskite)結晶相之PZT粉末，但隨著退火時間的增加，PZT粉末粒徑亦隨之變大；與一般傳統爐管所製備之PZT粉末比較，在相同退火溫度及時間下，微波加熱對於PZT粉末具有更快的晶體成長動力指數。

In this study, lead zirconate titanate (PZT) ferroelectric thick films prepared by a modified sol-gel method have been made by using CO2 laser low temperature annealing on SUS 430 substrate.
Firstly, the PZT powders are synthesized via conventional annealing process at 550℃, which possess an average particle size of about 194 nm, and then the PZT precursor and slurry are mixed and spin-coated on SUS 430 substrate by the modified sol-gel method. The subsequent sandwich structure is PZT(5-15μm)/LSMO/SUS 430. As the thickness of the PZT layer increasing to 15μm, the reflection of CO2 laser resulted from the SUS 430 substrate can be reduced so that the CO2 laser energy can not only be absorbed effectively by the PZT films but also can promote markedly the sintering ability of the PZT films at a low temperature of 880℃.
SEM observations show that the microstructures of the PZT thick films are dense and uniform. The Pr value is improved to 21.71μC/cm2 due to the good crystallinity of the PZT material. In addition, it is estimated that the penetration depth of PZT thick film is about 36.5μm for CO2 laser by measuring a reflection power from the specimens.
Moreover, single-phase perovskite PZT powders can be obtained by microwave rapid heat treatment at 450℃. Their average particle size is increased quickly with the annealing interval. Compare with the conventional annealing process, it is more efficient on kinetic index of grain growth for the PZT material by microwave annealing in the same temperature and annealing period.

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