近年來的文獻報告與研究成果指出，經過異原子摻雜後的奈米碳材有著優異的性質，不論是異原子摻雜奈米碳管或是異原子摻雜石墨烯，在各領域都有其應用性，好比說，能源儲存、電子元件、燃料電池、電化學感測器等領域。然而，如今的摻雜技術通常需要在複雜的真空系統下進行，這使的摻雜技術無法工業化量產。因此，在大氣常壓下異原子摻雜奈米碳材的技術發展，不論對科學或是科技領域都有其相當的發展性與影響力。
本研究提出，在大氣常壓下利用溶液輔助的取代反應方法，成功合成硫摻雜奈米碳管與磷摻雜奈米碳管等材料，且改善了傳統取代反應方法的摻雜低濃度與摻雜不均勻的問題。當中所使用的奈米碳管是利用化學氣相沉積法(CVD)所製備而成。將含有異原子的前驅物以及奈米碳管，在溶液的幫助之下藉由攪拌的方式充分混合均勻，將混合均勻的混合物置入管式高溫爐中，在大氣常壓下通入氬氣的同時，升溫至300-1000◦C鍛燒持溫4小時，之後即可得到摻雜了異原子的奈米碳管。從XPS(X-ray photoelectron spectroscopy)與Raman的結果中得知，可以藉由調控鍛燒溫度的方式達到控制異原子摻雜的濃度。從XPS的結果中，更可以得知異原子的確成功摻雜進入奈米碳管的sp2結構之中，而且透過使用溶液輔助的取代反應方法所合成的異原子摻雜奈米碳管，其異原子摻雜濃度比使用傳統取代反應方法的濃度還高。另一方面，經過摻雜之後的奈米碳管，也能夠從Raman 的ID/IG數值變大而得知，所提出的摻雜技術能夠控制碳管的缺陷濃度。為了測試摻雜過後碳管的導電性質，將異原子摻雜奈米碳管製備成導電紙後，再藉由四點探針的輔助量測之下，即可得知摻雜後的奈米碳管導電性質的表現。從結果上得知，經過異原子參雜後的奈米碳管，確實改善了其電性質方面的表現。應用溶液輔助的取代反應法所合成的異原子摻雜奈米碳管，也因為摻雜濃度比使用傳統的取代反應的摻雜濃度要高，更加改善了電性質的表現。綜合以上結果得知，藉由此技術可以改善奈米碳材在電子領域以及電化學相關領域的應用。而且關於此技術值得注意的是，藉由在大氣常壓下摻雜奈米碳管，製備條件中因為沒有使用複雜的真空系統，所以此技術是可以用於工業化量產的。

Recent theoretical and experimental studies have suggested that heteroatom doped carbon nanomaterials such as carbon nanotubes (CNTs) and graphenes as novel materials with exceptional properties for applications including nanoelectronics, energy storage, fuel cells, and electrochemical sensing. However, current synthesis methods of heteroatom doped carbon nanomaterials usually involve complicated vacuum systems, making it difficult to enable industrial-scale production. Consequently, the development of a controllable synthesis of heteroatom doped carbon nanomaterials at atmospheric pressure will lead to important advances on both scientific studies and innovation applications.
In this study, sulfur doped carbon nanotubes and phosphorus doped carbon nanotubes are both synthesized by a solution-assisted substitution reaction method at atmospheric pressure, whereas solution-assisted substitution reaction method improves the convention substitution reaction method for low heteroatom doping concentration and non-uniform doping distribution. Pristine multiple wall carbon nanotubes (MWCNTs) synthesized using a water-assisted chemical vapor deposition (CVD) are used as starting materials. The heteroatom doped carbon nanotubes are produced by heating the mixture of heteroatom precursor and multiple wall carbon nanotubes under argon atmosphere from 300 to 1000◦C for four hours at atmospheric pressure. Experimental results indicate that the heteroatom concentrations in the carbon nanotubes could be tuned by controlling the reaction temperature, confirmed by the X-ray photoelectron spectroscopy (XPS) and Raman characterizations. Detailed XPS characterization indicates that the heteroatoms are successfully doped into the sp2 carbon lattice, whereas the heteroatom doping concentration of as-produced heteroatom doped carbon nanotubes employed solution-assisted substitution reaction method is higher than heteroatom doped carbon nanotubes employed conventional substitution reaction method. The systematic Raman characterization is performed and shown the ratio of the D- and the G- bands (ID/IG) is increased for the as-produced samples, indicating the defect densities due to the doping process can be controlled in our method. Thin-film electrical conductance characterization measuring by four-point probe method suggests the electrical conductance of the as-prepared heteroatom doped carbon nanotubes are significantly improved by heteroatom doping, making them useful materials for electronics and electrochemical-base applications. It is also noteworthy from a practical point of view that the developed atmospheric pressure synthesis method is amenable to industrial-scale production since it avoids the need for a vacuum system.

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