為了獲得高性能高均一性的薄膜電晶體，我們藉由透鏡陣列輔助單晶定位技術，將TFT的通道位置以避開晶種的方式製作於粒徑為10μm的單晶矽晶粒中。另外我們也以半吸光層輔助結晶的技術，成功的在非晶矽膜以及多晶矽膜上成長出具12μm的大粒徑橫向長晶。以EBSD量測α-Si與p-Si的晶格結晶方位，最大部分都集中在<111>的結晶面。

In order to obtain high-performance thin-film transistor(TFTs),the channel position of TFTs to keep away from the seed and inside a location-controlled single crystal which grain size is 10μm by using microlenses array. In addition, we have successfully accomplished 12um lateral growth on amorphous silicon and polysilicon layer by semi-photosensitive layer enhance crystallization. To analysis by EBSD, the orient of amorphous silicon and polysilicon layer of lattice crystalline is principal in <111>.

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