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研究生: Meilati Pasca Muna
Meilati Pasca Muna
論文名稱: Cr及ITO奈米顆粒修飾石墨烯之蕭特基二極體光感測器研究
Chromium and Tin-Doped Indium Oxide (ITO) Nanoparticles Decorated Graphene/Silicon Schottky Photodetector
指導教授: 周賢鎧
Shyan-Kay Jou
口試委員: 周賢鎧
Shyan-Kay Jou
胡毅
Hu Yi
黃柏仁
Bohr-Ran Huang
學位類別: 碩士
Master
系所名稱: 工程學院 - 材料科學與工程系
Department of Materials Science and Engineering
論文出版年: 2020
畢業學年度: 108
語文別: 英文
論文頁數: 104
中文關鍵詞: Schottky junctionphotodetectorchromiumITOnanoparticlesresponsivity
外文關鍵詞: Schottky junction, photodetector, chromium, ITO, nanoparticles, responsivity
相關次數: 點閱:300下載:6
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  • Graphene/Si Schottky junction was modified with chromium and tin-doped indium oxide (ITO) nanoparticles. Chemical Vapor Deposition has been used to grow the graphene film which was subsequently transferred to substrate by the PMMA-assisted process. In order to obtain dispersed nanoislands on the graphene surface, the chromium coatings were prepared by pulsed DC magnetron sputtering, while the ITO coatings were prepared by pulsed RF. The chromium nanoparticles were deposited with different duty cycles, which were 50%, 75% and 90%. The ITO nanoparticles were deposited with different powers, which were 50 W, 60W and 70W. Raman was used to observe the characteristic of the graphene, which shows the defect of graphene after Cr and ITO deposition processes. The deposition of Cr and ITO result in p-type doping of graphene, since it shows the blue shift in Raman spectra. SEM and AFM was used to investigate the surface characterization of the nanoparticles. UV-Visible spectra were used to investigate the peak of surface plasmon resonance (SPR) of nanoparticles, which show the wide peak in the range 300 – 500 nm of wavelength. The Cr and ITO nanoparticles decorated Gr/Si photodetector show the self-powered characteristic and good improvement in the responsivity. The ON/OFF ratio of responsivity can be achieved up to 105. The fast response also can be achieved by the Cr and ITO nanoparticles decoration. The shortest time that can be achieved for rise time is 0.49 ms and for fall time is 0.47 ms. It shows a better performance of the photodetector compared to Gr/Si junction as the reference sample.


    Graphene/Si Schottky junction was modified with chromium and tin-doped indium oxide (ITO) nanoparticles. Chemical Vapor Deposition has been used to grow the graphene film which was subsequently transferred to substrate by the PMMA-assisted process. In order to obtain dispersed nanoislands on the graphene surface, the chromium coatings were prepared by pulsed DC magnetron sputtering, while the ITO coatings were prepared by pulsed RF. The chromium nanoparticles were deposited with different duty cycles, which were 50%, 75% and 90%. The ITO nanoparticles were deposited with different powers, which were 50 W, 60W and 70W. Raman was used to observe the characteristic of the graphene, which shows the defect of graphene after Cr and ITO deposition processes. The deposition of Cr and ITO result in p-type doping of graphene, since it shows the blue shift in Raman spectra. SEM and AFM was used to investigate the surface characterization of the nanoparticles. UV-Visible spectra were used to investigate the peak of surface plasmon resonance (SPR) of nanoparticles, which show the wide peak in the range 300 – 500 nm of wavelength. The Cr and ITO nanoparticles decorated Gr/Si photodetector show the self-powered characteristic and good improvement in the responsivity. The ON/OFF ratio of responsivity can be achieved up to 105. The fast response also can be achieved by the Cr and ITO nanoparticles decoration. The shortest time that can be achieved for rise time is 0.49 ms and for fall time is 0.47 ms. It shows a better performance of the photodetector compared to Gr/Si junction as the reference sample.

    TABLE OF CONTENTS ABSTRACT i TABLE OF CONTENTS iii LIST OF FIGURES v LIST OF TABLES ix CHAPTER 1 1 INTRODUCTION 1 1.1. Background 1 1.2. Objectives of The Research 2 CHAPTER 2 3 THEORY 3 2.1 Basic of Semiconductor 3 2.2 Metal – Semiconductor Contacts 5 2.3 Schottky Junction 6 2.3.1 The Schottky Barrier 6 2.3.2 Current Transport Process 10 2.3.3 Measurements of Schottky Parameter 12 2.4 Photodetector 14 2.5 Graphene 15 2.6 Graphene/Semiconductor Schottky Junction in Some Applications 19 2.7 Metal Nanoparticles 24 2.8 Surface Plasmon Resonance (SPR) 25 2.9 Decoration of Graphene by Nanoparticles and Thin Films 26 CHAPTER 3 33 EXPERIMENTAL METHOD 33 3.1 Flowchart of Experiment 33 3.2 Experimental Materials 34 3.3 Experimental Instruments 35 3.4 Experimental Procedure 36 3.4.1 Sample Preparation 36 3.4.2 Graphene Growth Mechanism 36 3.4.3 Transfer Graphene Process 38 3.4.4 Fabrication of Schottky Device 39 3.4.5 Deposition of Chromium 41 3.4.6 Deposition of ITO 42 3.5 Micro Raman Spectroscopy 43 3.6 Field Emission Scanning Electron Microscopy (FE-SEM) 44 3.7 Atomic Force Microscopy (AFM) 45 3.8 UV-Visible Spectroscopy 45 3.9 I-V Measurement 46 3.10 Photo-response Measurement 46 CHAPTER 4 48 RESULT AND DISCUSSION 48 4.1 Chromium Nanoparticles 48 4.1.1 Graphene Characterization 48 4.1.2 Surface Analysis 49 4.1.3 Optical Properties Analysis 51 4.1.4 Electrical Properties Analysis 52 4.2 ITO Nanoparticles 67 4.2.1 Graphene Characterization 67 4.3 Surface Analysis 69 4.4 Optical Analysis 71 4.5 Electrical Analysis 72 CHAPTER 5 87 CONCLUSION AND FUTURE WORK 87 REFERENCES 89

    REFERENCES
    [1] H. Xiao, Introduction to Semiconductor Manufacturing Technology: Second Edition. 2012.
    [2] S. M. Sze and K. K. Ng, Physics of Semiconductor Devices. 2006.
    [3] A. Di Bartolomeo, “Graphene Schottky Diodes: An Experimental Review of The Rectifying Graphene/Semiconductor Heterojunction,” Physics Reports. 2016, doi: 10.1016/j.physrep.2015.10.003.
    [4] T. Nakayama, Y. Kangawa, and K. Shiraishi, “Atomic Structures and Electronic Properties of Semiconductor Interfaces,” Compr. Semicond. Sci. Technol., vol. 1–6, pp. 113–174, 2011, doi: 10.1016/B978-0-44-453153-7.00052-3.
    [5] S. K. Cheung and N. W. Cheung, “Extraction of Schottky Diode Parameters from Forward Current-Voltage Characteristics,” Appl. Phys. Lett., vol. 49, no. 2, pp. 85–87, 1986, doi: 10.1063/1.97359.
    [6] A. K. Geim and K. S. Novoselov, “The Rise of Graphene,” in Nanoscience and Technology: A Collection of Reviews from Nature Journals, 2009.
    [7] R. R. Nair et al., “Fine Structure Constant Defines Visual Transparency of Graphene,” Science (80-. )., 2008, doi: 10.1126/science.1156965.
    [8] K. I. Bolotin et al., “Ultrahigh Electron Mobility in Suspended Graphene,” Solid State Commun., 2008, doi: 10.1016/j.ssc.2008.02.024.
    [9] J. C. Meyer, A. K. Geim, M. I. Katsnelson, K. S. Novoselov, T. J. Booth, and S. Roth, “The Structure of Suspended Graphene Sheets,” Nature, vol. 446, no. 7131, pp. 60–63, 2007, doi: 10.1038/nature05545.
    [10] F. Molitor et al., “Electronic Properties of Graphene Nanostructures,” Journal of Physics Condensed Matter. 2011, doi: 10.1088/0953-8984/23/24/243201.
    [11] Y. Zhang, L. Zhang, and C. Zhou, “Review of chemical vapor deposition of graphene and related applications,” Acc. Chem. Res., 2013, doi: 10.1021/ar300203n.
    [12] Z. Ni, Y. Wang, T. Yu, and Z. Shen, “Raman Spectroscopy and Imaging of Graphene,” Nano Res., 2008, doi: 10.1007/s12274-008-8036-1.
    [13] M. A. Pimenta, G. Dresselhaus, M. S. Dresselhaus, L. G. Cançado, A. Jorio, and R. Saito, “Studying Disorder in Graphite-Based Systems by Raman Spectroscopy,” Physical Chemistry Chemical Physics. 2007, doi: 10.1039/b613962k.
    [14] Y. Y. Wang et al., “Raman Studies of Monolayer Graphene: The Substrate Effect,” J. Phys. Chem. C, 2008, doi: 10.1021/jp8008404.
    [15] X. Wang, L. Zhi, and K. Müllen, “Transparent, Conductive Graphene Electrodes for Dye-Sensitized Solar Cells,” Nano Lett., 2008, doi: 10.1021/nl072838r.
    [16] C.-L. Hsu, C.-T. Lin, J.-H. Huang, C.-W. Chu, K.-H. Wei, and L.-J. Li, “Layer-by-Layer Graphene/TCNQ Stacked Films as Conducting Anodes for Organic Solar Cells,” ACS Nano, vol. 6, no. 6, pp. 5031–5039, Jun. 2012, doi: 10.1021/nn301721q.
    [17] C.-C. Chen, M. Aykol, C.-C. Chang, A. F. J. Levi, and S. B. Cronin, “Graphene-Silicon Schottky Diodes,” Nano Lett., vol. 11, no. 5, pp. 1863–1867, May 2011, doi: 10.1021/nl104364c.
    [18] Z. Zhang, Y. Guo, X. Wang, D. Li, F. Wang, and S. Xie, “Direct Growth of Nanocrystalline Graphene/Graphite Transparent Electrodes on Si/SiO 2 for Metal-Free Schottky Junction Photodetectors,” Adv. Funct. Mater., vol. 24, no. 6, pp. 835–840, Feb. 2014, doi: 10.1002/adfm.201301924.
    [19] C. Xie et al., “Monolayer Graphene Film/Silicon Nanowire Array Schottky Junction Solar Cells,” Appl. Phys. Lett., vol. 99, no. 13, p. 133113, Sep. 2011, doi: 10.1063/1.3643473.
    [20] T. Feng et al., “Graphene Based Schottky Junction Solar Cells on Patterned Silicon-Pillar-Array Substrate,” Appl. Phys. Lett., vol. 99, no. 23, p. 233505, Dec. 2011, doi: 10.1063/1.3665404.
    [21] X. Li et al., “Graphene-on-Silicon Schottky Junction Solar Cells,” Adv. Mater., vol. 22, no. 25, pp. 2743–2748, 2010, doi: 10.1002/adma.200904383.
    [22] E. Shi et al., “Colloidal Antireflection Coating Improves Graphene-Silicon Solar Cells,” Nano Lett., 2013, doi: 10.1021/nl400353f.
    [23] X. An, F. Liu, Y. J. Jung, and S. Kar, “Tunable Graphene-Silicon Heterojunctions for Ultrasensitive Photodetection,” Nano Lett., 2013, doi: 10.1021/nl303682j.
    [24] X. Wang et al., “Study on The Graphene/Silicon Schottky Diodes by Transferring Graphene Transparent Electrodes on Silicon,” Thin Solid Films, vol. 592, pp. 281–286, 2015, doi: 10.1016/j.tsf.2015.06.039.
    [25] Y. An, A. Behnam, E. Pop, and A. Ural, “Metal-Semiconductor-Metal Photodetectors Based on Graphene/ P -Type Silicon Schottky Junctions,” Appl. Phys. Lett., vol. 102, no. 1, p. 013110, Jan. 2013, doi: 10.1063/1.4773992.
    [26] J. Jana, M. Ganguly, and T. Pal, “Enlightening Surface Plasmon Resonance Effect of Metal Nanoparticles for Practical Spectroscopic Application,” RSC Adv., vol. 6, no. 89, pp. 86174–86211, 2016, doi: 10.1039/c6ra14173k.
    [27] S. K. Ghosh and T. Pal, “Interparticle Coupling Effect on The Surface Plasmon Resonance of Gold Nanoparticles: From Theory To Applications,” Chem. Rev., vol. 107, no. 11, pp. 4797–4862, 2007, doi: 10.1021/cr0680282.
    [28] M. Kanehara, H. Koike, T. Yoshinaga, and T. Teranishi, “Indium Tin Oxide Nanoparticles With Compositionally Tunable Surface Plasmon Resonance Frequencies in The Near-IR Region,” J. Am. Chem. Soc., vol. 131, no. 49, pp. 17736–17737, 2009, doi: 10.1021/ja9064415.
    [29] V. S. Jaswal, A. K. Arora, M. Kinger, V. D. Gupta, and J. Singh, “Synthesis and Characterization of Chromium Oxide Nanoparticles,” Orient. J. Chem., vol. 30, no. 2, pp. 559–566, 2014, doi: 10.13005/ojc/300220.
    [30] D. Xiang et al., “Surface Transfer Doping-Induced, High-Performance Graphene/Silicon Schottky Junction-Based, Self-Powered Photodetector,” Small, vol. 11, no. 37, pp. 4829–4836, Oct. 2015, doi: 10.1002/smll.201501298.
    [31] T. Zhai, L. Li, X. Wang, X. Fang, Y. Bando, and D. Golberg, “Recent Developments in One-Dimensional Inorganic Nanostructures for Photodetectors,” Adv. Funct. Mater., 2010, doi: 10.1002/adfm.201001259.
    [32] L. B. Luo et al., “Surface Plasmon Resonance Enhanced Highly Efficient Planar Silicon Solar Cell,” Nano Energy, vol. 9, pp. 112–120, 2014, doi: 10.1016/j.nanoen.2014.07.003.
    [33] S. Pillai, K. R. Catchpole, T. Trupke, and M. A. Green, “Surface Plasmon Enhanced Silicon Solar Cells,” J. Appl. Phys., vol. 101, no. 9, 2007, doi: 10.1063/1.2734885.
    [34] S. H. Lim, W. Mar, P. Matheu, D. Derkacs, and E. T. Yu, “Photocurrent Spectroscopy of Optical Absorption Enhancement in Silicon Photodiodes Via Scattering from Surface Plasmon Polaritons in Gold Nanoparticles,” J. Appl. Phys., vol. 101, no. 10, p. 104309, May 2007, doi: 10.1063/1.2733649.
    [35] X. Liu et al., “High Efficiency Schottky Junction Solar Cells by Co-Doping of Graphene With Gold Nanoparticles and Nitric Acid,” Appl. Phys. Lett., vol. 106, no. 23, p. 233901, Jun. 2015, doi: 10.1063/1.4922373.
    [36] Z. Tu et al., “Controllable Growth of 1–7 Layers of Graphene by Chemical Vapour Deposition,” Carbon N. Y., vol. 73, pp. 252–258, Jul. 2014, doi: 10.1016/j.carbon.2014.02.061.
    [37] P. Ahlberg, T. Nyberg, S.-L. Zhang, Z.-B. Zhang, and U. Jansson, “Toward Synthesis of Oxide Films on Graphene With Sputtering Based Processes,” J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom., vol. 34, no. 4, p. 040605, Jul. 2016, doi: 10.1116/1.4949565.

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