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研究生： 張道弘
Tao-Hung Chang
論文名稱： 製備低介電多孔二氧化矽/聚乳酸複合膜
Fabrication of low-k porous SiO2/PLA hybrid film
指導教授： 施劭儒
Shao-ju Shih
口試委員: 梁元彰
Yuan-chang Liang
王丞浩
Chen-hao Wang
鄒年棣
Nien-ti Tsou
學位類別： 碩士
Master
系所名稱： 工程學院 - 材料科學與工程系
Department of Materials Science and Engineering
論文出版年： 2016
畢業學年度： 104
語文別： 中文
論文頁數： 96
中文關鍵詞： 低介電材料 、複合膜 、二氧化矽 、噴霧熱裂解法
外文關鍵詞： low-K materials, hybrid film, silica, spray pyrolysis
相關次數： 點閱：336  下載：3 
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  •  上一筆

    • 二氧化矽(silica)被廣泛利用在藥物載體、隔熱材料、低介電材料等多種應用上，此研究中將針對低介電材料應用進行探討。多孔二氧化矽擁有低成本、高熱穩定性、化學穩定性、及低介電常數等優勢，使其在低介電材料的領域中佔有一席之地。傳統製程上使用溶膠凝膠法(sol-gel method)合成多孔二氧化矽，此製程可以合成出形貌控制良好及純度高之玻璃粉末，但由於其製程所需時間較長為非連續製程，不利於在工業上大量的量產。
    此研究中將利用噴霧熱裂解法(spray pyrolysis)合成多孔二氧化矽，噴霧熱裂解法擁有快速且連續性的製程，有利於工業上的量產。於此實驗中也成功利用四乙氧基矽烷(TEOS)及多種造孔劑(agar, PEG 600, and F127)作為前驅物於噴霧熱裂解系統合成出多孔二氧化矽。
    經由噴霧熱裂解合成出多孔二氧化矽則利用X光繞射儀鑑定其相組成，利用場發射掃描式電子顯微鏡分析其表面結構，內部結構則是藉由場發射穿透式電子顯微鏡觀察，經由電阻電容及電桿量度儀測量其與PLA高分子混和而成之薄膜電容值，經由公式得其介電常數。

    最後也將針對噴霧熱裂解系統藉由添加不同造孔劑所合成出之多孔二氧化矽顆粒形成機制進行探討。

    Silica (SiO2) materials are widely used as drug carriers, thermal insulators, and low-k dielectric materials. Furthermore, porous SiO2 is one of the candidates for low-k dielectrics due to its superior properties of low cost, high thermal stability, high chemical resistance, and low dielectric constant. So far, the common method of fabricating the porous SiO2 is the sol-gel method; however, this method contains the drawbacks of discontinuous process and long process time deteriorate poteneial,
    which is not suitable for mass production.
    This study proposed the one-step and continuous method of spray pyrolysis (SP) to prepare porous SiO2 particles. The experimental results showed that the various porous structure of SiO2 particles were achieved by using the mixed precursor solutions of tetraethyl orthosilicate and various pore-forming agents (agar, PEG 600, and F127) for SP.
    Moreover, the phase compositions were analyzed by X-ray diffraction, the surface morphologies and particle size distributions were characterized by scanning electron microscopy, and the geometry was observed by transmission electron microscopy.
    Also, the SP formation mechanisms of porous silica particles using various pore-forming( agents agar, PEG 600, and F127 )were discussed.

    摘要 I Abstract III 致謝 V 目錄 VI 圖目錄 XI 表目錄 XVIII 第1章、 緒論 1 第2章、 文獻回顧 3 2.1 RC delay 3 2.2 低介電材料 7 2.2.1 Silsesquioxane (SSQ)-based materials 9 2.2.2 Silica based materials 10 2.2.3 Organic polymers 12 2.2.4 Inorganic-organic hybrid materials 15 2.3 聚乳酸(PLA)介紹 21 2.4 多孔型二氧化矽 23 2.4.1 多孔材料介紹 23 2.4.2 多孔二氧化矽之性質及應用 25 2.5 多孔二氧化矽常用製程 27 2.5.1 溶膠-凝膠法 27 2.5.2 噴霧熱裂解法 28 2.6 噴霧熱裂解法 34 2.6.1 顆粒成型機制 36 2.6.2 靜電沉積技術 37 第3章、 多孔型二氧化矽粒子製備 39 3.1 實驗藥品 39 3.2 實驗儀器設備 40 3.3 樣品製備之步驟 41 3.3.1 多孔二氧化矽玻璃之製備與收集 41 3.3.2 二氧化矽/聚乳酸複合膜製備 43 3.4 材料分析 47 3.4.1 X-光繞射儀(X-Ray diffractometer, XRD) 47 3.4.2 場發射掃描式電子顯微鏡(Field-emission scanning electron microscope, FE-SEM) 47 3.4.3 穿透式電子顯微鏡(Transmission electron microscope, TEM) 48 3.4.4 電阻電容及電桿量度儀(Precision LCR meter) 48 第4章、 實驗結果 49 4.1 多孔二氧化矽粉末分析－Agar treated 49 4.1.1 X光繞射分析 49 4.1.2 SiO2粉體 FESEM 表面形貌分析 51 4.1.3 SiO2粉體 TEM 內部結構分析 55 4.1.4 SiO2/PLA hybrid film介電常數 57 4.2 多孔二氧化矽粉末分析－PEG 600 treated 59 4.2.1 X光繞射分析 59 4.2.2 SiO2粉體 FESEM 表面形貌分析 60 4.2.3 SiO2粉體 TEM 內部結構分析 64 4.2.4 SiO2/PLA hybrid film介電常數 66 4.3 多孔二氧化矽粉末分析－F127 treated 68 4.3.1 X光繞射分析 68 4.3.2 SiO2粉體 FESEM 表面形貌分析 69 4.3.3 SiO2粉體 TEM 內部結構分析 73 4.3.4 SiO2/PLA hybrid film介電常數 75 第5章、 討論 77 5.1 二氧化矽之成型機制探討 77 5.1.1 Agar 77 5.1.2 PEG 600 80 5.1.3 F127 81 5.2 孔隙率與介電常數 84 第6章、 結論 89 第7章、 參考文獻 90

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