本研究利用反應式離子束濺鍍法成功地沉積了氧化鎳薄膜， 並且研究氧氣流量比及沉積基板溫度對於氧化鎳薄膜的光電特性影響。研究結果顯示，在 300℃下的NiO(200)的半高寬會比在 150℃下的NiO(200)窄，半高寬變窄顯示升溫製程使得薄膜結晶性改善。在150℃及 300℃下時，當氧氣流量比上升，發現NiO(200)繞射峰值往小角度偏移，其原因可能為產生過多的氧間隙缺陷，使得NiO晶格間距變大。而拉曼分析指出，隨著氧氣流量比的上升，其晶粒尺寸變小，且拉曼峰值往低能量偏移。在EDS分析中，隨著氧氣流量的上升，其O/Ni比上升，且150℃下薄膜內氧原子的比例會比300℃時高。製程溫度上升使得穿透率改善，但氧氣流量的增加會導致穿透率下降。300C及150C下沉積之NiO能隙隨氧氣流量的增加而由3.6 eV上升至4.2 eV。在 150℃並且全氧的環境下可以得到最低的電阻率3.3 Ω∙cm。

Nickel oxide has been deposited by reactive ion beam sputter deposition. Effects of oxygen partial flow rates and deposition temperatures on the electrical and optical properties of nickel oxide are characterized. Samples deposited at both 150 and 300C are polycrystalline NiO, while the FWHM of NiO(200) decreases as deposition temperature increases. As oxygen partial pressure increases, the diffraction peak position of NiO(200) shifts to the smaller angle, indicating increased lattice constant, which may due to the presence of oxygen interstitial defects. As oxygen partial pressure increases, local vibration mode at 545 cm-1 shifts to lower energy and its FWHM increases, indicating deteriorated crystalline quality. Oxygen atomic percentage increases as oxygen partial pressure increases, while oxygen atomic percentage drops as deposition temperature increases. The bandgap of NiO deposited at 150 and 300C both increases from 3.6 eV to 4.1 eV as oxygen partial pressure increases. NiO deposited at 150C with 100% oxygen partial pressure exhibits the lowest resistivity of 3.3 Ω∙cm

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