本論文為研究金(鍺)/磷化鎵(111)晶片經合金化製程後的微結構變化。實驗方式為使用熱蒸鍍法依序蒸鍍沈積Au、AuGe及Au三層金屬薄膜於磷化鎵晶片(111)，再利用快速升降溫爐及傳統管狀爐作合金化熱處理。使用電流-電壓特性曲線分析其金屬/半導體接觸性質，再以X光繞射儀、高解析穿透式電子顯微鏡、歐傑電子能譜儀及EDS成分分析儀等儀器，分析此合金層經合金化處理後的材料成份及微觀結構。
試片經電流－電壓曲線分析結果，發現試片經450或500℃的快速升降溫爐熱處理與在485或520℃的傳統管狀爐熱處理，會有較小的順向偏壓值，尤其以500℃快速升降溫爐處理的試片有最低的順向偏壓值。
由XRD分析可知，剛沈積後金屬薄膜層為Au與γ-AuGe兩合金相的混合組織；當試片經快速升降溫爐350或400℃熱處理後，金屬薄膜層之相結構與剛沈積後X-ray分析結果相似；當快速升降溫爐之熱處理溫度升至450或500℃時，此時金屬薄膜層之相結構即轉變成為Au與β-AuGa兩合金相的混合結構；而試片經傳統管狀爐485或520℃熱處理與後者的分析結果相似。
從AES的縱深分佈觀察到試片經傳統管狀爐520℃熱處理15分鐘後，發現鍺有往磷化鎵內部及金屬層擴散的趨勢，且由HRTEM的高解析晶格影像計算發現有鍺磷化合物於磷化鎵晶片內生成。而此鍺磷化合物具FCC晶格，其晶格常數a = 5.463Å，且此鍺磷化合物與磷化鎵晶片有方向關係，其方向關係為立方晶對立方晶的對應關係。

The object of this thesis was to study the metallization layers of Au/AuGe/Au on n-type GaP wafers. The Au/AuGe/Au layers were deposited onto the GaP wafers by a thermal evaporation method. After the evaporation process the GaP wafers were annealed in either traditional tube furnace or rapid thermal annealing (RTA) furnace for the alloying processes. We measured the I-V curves of the wafers for the Ohmic contact tests and compared the results with those analyses in the material testing equipments such as XRD, TEM, AES, and EDS to figure out the relationships between Ohmic contact and the changes in the microstructure of the Au/GaP interface.
The XRD analysis in the Au/AuGe/Au layers on the GaP wafers indicated that the metal layers are mixed with Au and γ-AuGe phases in the as-deposited condition and RTA processes at 350 and 400 oC. The metal layers are Au and -AuGa phases in the traditional annealing process at 485 and 520 oC and RTA processes at 450 and 500 oC.
We observed the sample annealed in the traditional tube furnace at 520 oC for 15 minutes by using lattice image methods to identify the phase of GeP compound. We observed the sample after annealing in the process of the traditional tube furnace at 520 oC for 15 minutes form the GeP compound belongs to face-centered cubic in the Bravais lattices. The lattice constant of the GeP is about a=5.463Å for comparing it with that of GaP. The lattice of the GeP compound has cubic to cubic orientation relationships with that of GaP from the TEM observation.

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