本文藉由改變離子束轟擊角度，使Si (100) 基板表面產生不同波長之波紋形貌；使用反應式離子束濺鍍法成長氧化鋅奈米粒子，經由改變成長時間、基板溫度，討論最佳奈米粒子成長參數；最後將奈米粒子分別沉積在不同轟擊角度之基板，觀察奈米粒子的分佈情況；在光學量測方面，在奈米粒子上覆蓋保護層，討論不同沉積時間對奈米粒子光學影響。在離子束轟擊角度為30°時，有最大波長為314 nm，隨著轟擊角度增加波長有下降的趨勢。成長奈米粒子在不同基板溫度條件下，可發現基板溫度由200℃上升至300℃，其奈米粒子高度由2.4 nm下降至1.7 nm，在基板溫度250℃時，奈米粒子的直徑有最小值約為22.9 nm。改變沉積時間條件下，奈米粒子尺寸會隨著沉積時間增加而上升。沉積奈米粒子在轟擊角度為60°基板，其波紋之形貌較為陡峭，奈米粒子會分佈在波紋的波峰上；而沉積在轟擊角度為40°基板，其波紋之形貌較為平緩，導致奈米粒子分佈與表面形貌較沒有關係。量測不同沉積時間的奈米粒子之樣品，可以發現PL譜線近能隙發光位置，隨著奈米粒子尺寸增加，而使得量子侷限效應下降，產生紅移的現象，PL譜線之半高寬也隨著沉積時間上升而下降，由於沉積時間上升導致奈米粒子尺寸較為一致所造成。

Quasi periodic nanoripples on Si(100) substrates with spatial wavelength  from 314 to 85 nm were prepared by ion beam sputtering utilizing ion beam incident angles from 30˚ to 60˚. ZnO nanoparticles with diameters from 15 ~ 25 nm and height of 3 nm were successfully deposited on ion-beam textured Si substrates by reactive ion beam sputter deposition. As the deposition temperature increases from 200 to 300˚C, the height of ZnO nanoparticle decreases from 2.4 to 1.7 nm. Increasing deposition time causes increase of ZnO nanoparticle diameter. Evenly distributed ZnO nanoparticles were found on Si substrates with  = 249 nm, while on substrates with  = 85 nm, ZnO nanoparticles were preferentially located on the crest of the quasi-periodic structures. Nanoparticles preferentially accumulation where the slope is minimized on the growth surface. As the ZnO nanoparticle diameter increases from 15 to 25 nm, room temperature near-band-edge photoluminescence emission energy decreases from 3.38 to 3.30 eV, which is due to size dependent quantum confinement effect.

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