本研究以磁控濺鍍技術，製作出30-100nm的YSZ薄膜於矽基板、MgO、LaAlO3、LiNbO3和不鏽鋼上。薄膜的型態則以SEM、AFM觀察，結構為柱狀晶且其表面緻密且無孔洞，從XRD、Raman和XPS分析中確定為立方晶向之8YSZ薄膜。XPS的鍵結分析中發現YSZ/Si的介面，存在缺氧的SiOx(x<2)。使用交流阻抗分析儀量測YSZ/Si介面處離子導電行為，其中B、C type YSZ/Si比較中，量測溫度達200℃時B type的YSZ(Y)方向的離子導產生作用，於500℃的導電率則有102.3(S/cm)表現；YSZ/MgO量測不到任何阻抗，應為介面呈壓應力型態所致；YSZ/LAO和YSZ/LNO分別則於400和500℃展現半圓圖譜，介面的效應導致導電率呈現σ30nm>σ70nm>σ100nm，整體導電率表現與張應力大小成正比，即σYSZ/Si>σYSZ/LAO>σYSZ/LNO。在YSZ(Y)方向所產生的巨離子導電效應中，矽基板約200℃就產生了效應，而絕緣基板則在400-500℃才發生，證明了基板與整體導電率的關係，基板生成的電場可能影響傳輸電子的能力與離子的導通。然而導體基板由於導電率極好，造成短路而無法量測到YSZ訊號。因此本研究認為提升整體元件之導電率表現，基板的選擇有助於提升空間電荷區域，而顯露更佳離子導電的介面效應。

In this study, the YSZ (Yttria-stabilized zirconia) thin film was deposited on different substrates. The material of substrates includes Silicon, MgO, LaAlO3(LAO), LiNbO3(LNO) and stainless steel. The thickness of the YSZ film was measured by Ellipseometer and SEM, and its surface morphology was observed by using SEM and AFM. The thin film is columnar. The information gathered by using XRD, Raman Spectroscopy, and XPS shows that the thin film is cubic 8 YSZ.
According to the XPS bonding analysis, there are SiOx (x<2) exist at the YSZ/Si interface. Therefore, the ionic conductivity of the YSZ/Si interface increases. Comparing the electrical characteristics of type B and type C interfaces in this study, it was found that the ironic conduction of type B can be activated when the temperature increased to 200oC. When the temperature was 500oC, it has a best performance, 102.3(S/cm). On the other hand, no resistance can be observed from the YSZ/MgO specimens. As to the YSZ/LAO and YSZ/LNO specimens, the semi-circle impedance spectra can be measured at 400oC and 500oC relatively.
For all substrates, the space charge region affects the conductivity of the thin film (σ30nm > σ70nm > σ100nm). The larger dilatiative strain a substrate has, the better overall conductivity it performed (σYSZ/Si > σYSZ/LAO > σYSZ/LNO). The colossal ionic conduction occurred on the Si substrate at 200oC, and for those insulator substrates, LAO and LNO, the same effect occur till 400~500oC. This shows that the material of substrate indeed affects the overall conductivity of the device. To enhance the overall conductivity of a device, the material of substrate is relatively more important than the dilatiative strain and the space charge region of the interface. However, substrates with good conductivity are not always the best choice. The conductivity of conductor substrates (stainless steel) is high, so the electrical flow passing the YSZ film is too weak to be measured.

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