研究生: |
陳建志 Jian-Jhih Chen |
---|---|
論文名稱: |
利用不同前驅物以油墨網印法製備硒化銅銦鎵太陽能電池及其分析 Preparation and analysis of ink-printed CuInGaSe2 solar cells by using different precursors |
指導教授: |
郭東昊
Dong-Hau Kuo |
口試委員: |
何清華
Ching-Hwa Ho 薛人愷 Ren-kae Shiue 郭永綱 Yung- Kang Kuo |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 材料科學與工程系 Department of Materials Science and Engineering |
論文出版年: | 2012 |
畢業學年度: | 100 |
語文別: | 中文 |
論文頁數: | 102 |
中文關鍵詞: | 硒化銅銦鎵 、油墨網印法 |
外文關鍵詞: | CIGSe, ink-printing |
相關次數: | 點閱:229 下載:1 |
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近年來,許多研究者紛紛投入CIGSe薄膜太陽能電池非真空製程之研究,非真空製程方式極多,其薄膜緻密程度及晶粒大小為光電轉換效率之關鍵。
本實驗利用油墨網印法製備硒化銅銦鎵薄膜太陽能電池,以不同之前驅物薄膜(CIGSe、CIGSe + 10 mol %Te、CIGSe + 5 mol %Sb2S3、陶金CIG及陶金CIGZT),藉由適當之硒化條件(硒化源及硒化方式)進行硒化退火,透過XRD、FE-SEM、EDS及霍爾量測分析硒化銅銦鎵吸收層之物理性質。將各組成較佳之參數製備成電池元件(Ag/ITO(RF supttering,500 nm)/i-ZnO(RF sputtering,50 nm)/CdS(CBD,50 nm)/吸收層(screen printing,2-5 μm)/Mo(DC supttering,800 nm)/ Al2O3),利用擬太陽能光測試儀器測試其電池之光電轉換效率。
實驗結果顯示,於陶瓷CIGSe方面,(CIGSe + 5 mol% Sb2S3)薄膜於650 oC下硒化後,薄膜表面型態最為平整且緻密,晶粒粒徑約為500 nm;於陶金前驅物方面,陶金CIG及陶金CIGZT前驅物薄膜於650 oC硒化後,其晶粒粒徑約為1-2 μm。經XRD分析皆為CIGSe單一相,EDS及霍爾量測分析皆為缺銅之p-type 半導體。將此三組製程參數之吸收層製備成電池元件,其光電轉換效率分別為0.268% (CIGSe + 5 mol% Sb2S3)、0.96%(陶金CIG)及0.861%(陶金CIGZT)。
The non-vacuum processes for Cu(In,Ga)Se2(CIGSe) solar cells have gradually attracted the researches’ attentions. However, the major problem of the non-vacuum processes is the densification, grain size and the purity of the p-type absorption layer.
In the study, CIGSe thin film solar cells were prepared by using ink-printing on alumina substrates. The p-type absorption layers were prepared with different precursor (CIGSe, CIGSe + 10 mol% Te, CIGSe + 5 mol% Sb2S3, and CIG and CIGZT cermets), followed by selenization with different Se sources and annealing temperatures. The CIGSe solar cell was constituted with the stacking form of Ag/ITO/ZnO/CdS/ ink-printing CIGSe/Mo/Al2O3. The quality of the absorption layer was analyzed by X-ray diffractometer, field-emission scanning electron microscope equipped with energy dispersive X-ray spectrometer and Hall measurement. The performance of the solar cells was evaluated under the standard AM1.5 illumination.
The experimental results showed that the ink-printing CIGSe thin film of a thickness of 2-5 μm with the CIGSe + 5 mol% Sb2S3 ceramic precursor after selenization at 650 oC had shown the best performance with dense microstructure, desired composition, and the grain size of 500 nm. On the other hand, the CIGSe films obtained from CIG and CIGZT cermet precursors after selenization at 650 oC had good crystillinity and large grain size of 1-2μm. The stacked solar cells displayed the power conversion efficiencies of 0.268% (CIGSe + 5mol % Sb2S3), 0.96% (CIG) and 0.861% (CIGZT).
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