此篇論文提出了以無接面金氧半場效電晶體觸發之功率橫向絕緣閘極雙極性電晶體。傳統的絕緣閘極雙極性電晶體中，藉由導通元件的PN二極體，進而有效的降低漂移區的串聯電阻，即為傳導調變效應。但這種功率元件有一個很重要的問題，因為在結構中有寄生的PNPN閘流體，會有閉鎖效應 (Latch-up) 的問題。
　　為了解決閉鎖效應的問題，在本文中，藉由移除元件結構中的P型井後使元件內部沒有寄生的PNPN閘流體。而場效應結構則由無接面金氧半場效電晶體取代了傳統的金氧半場效電晶體。但無接面金氧半場效電晶體會使耐壓特性大幅下降，因此使用溝渠式閘極去薄化無接面電晶體的通道。此外無接面金氧半場效電晶體有更低的導通阻抗。因此以無接面金氧半場效電晶體觸發之絕緣閘極雙極性電晶體解決了閉鎖效應，而且在不會明顯降低耐壓特性的情況下，有更好的導通特性。

　　A lateral insulated-gate bipolar transistor power device triggered by junctionless MOSFET has been proposed. For the conventional IGBT, owing to the conductivity modulation by turning on the pn diode, the large series resistance in the drift can be effectively reduced. However, a major problem with this kind of power device is latch-up because of a parasitic pnpn-thyristor in the device.
　　In order to solve the latch-up problem, IGBT that is without p-well region would not form pnpn structure, and the resultant triggering FET is a junctionless MOSFET instead of a conventional MOSFET. However, the junctionless MOSFET will cause deterioration of breakdown characteristics. For improving the blocking voltage of the device, a trench region is formed to thin the channel region of the junctionless MOSFET. In addition, the junctionless MOSFET can show a lower on-state resistance than the conventional MOSFET. As a result, as compared to the IGBT triggered by a conventional MOSFET, the IGBT triggered by a junctionless MOSFET can resolve the latch-up problem and cause much better on-state characteristics, without obvious degradation of breakdown characteristics.

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