本論文主要內容在於研究五苯環有機薄膜電晶體之元件製作以及其特性之分析，並利用所提出之新式改善技術來增進元件之性能與可靠度。首先，我們提出一簡易之低溫化學氣相沉積技術去製備具有疏水性的二氧化矽薄膜，並將其應用於元件之閘極絕緣層上。其研究結果顯示，以自組裝之電漿式中空陰極化學氣相沉積系統在一基板溫度低於攝氏一百度並使用四乙氧基矽烷作為前驅物所製備出來之二氧化矽薄膜中，會含有來自四乙氧基矽烷分子因低溫而導致不完全解離所殘留下的疏水性甲烷官能基。這些疏水性甲烷官能基使得二氧化矽薄膜表面呈現疏水性，因此有利於後續五苯環通道層之結晶成長，進而獲得較大之晶粒尺寸，使得所製元件之性能表現已經可以與其它使用高溫所製備之二氧化矽薄膜作為閘極絕緣層相媲美。
其次，我們提出以鐵氟龍薄膜作為表面修飾層，沉積在元件之源/汲極與閘極絕緣層上方來改善下接觸式元件結構之電氣特性。其研究結果顯示，藉由沉積一點五奈米厚度之鐵氟龍表面修飾層，可以改善五苯環通道層之分子配向以及五苯環通道層與源/汲極之間的載子注入效率，進而提升元件之電氣特性。這可以歸因於閘極絕緣層經由鐵氟龍薄膜修飾後，其表面特性可由原來的親水性轉變為疏水性，且並無大幅增加其表面粗糙度，因此有利於後續五苯環通道層之結晶成長；另外，鐵氟龍修飾層穿插於五苯環通道層與源/汲極之間，可使得載子能輕易地藉由穿隧效應進行傳輸，進而大幅提升有機半導體與金屬之間的載子注入效率。而元件經由使用一點五奈米厚度之鐵氟龍表面修飾層之後，其輸出電流與載子移動率的表現與未使用鐵氟龍表面修飾層之元件相比，分別被提升了百分之九十三與百分之一百零五。同時我們亦發現元件之性能表現會隨著鐵氟龍表面修飾層的厚度增加而呈現衰退現象，這可以歸因於鐵氟龍薄膜本身具有極高之電阻率，且其絕緣特性會隨著厚度增加而更加顯著，導致在有機半導體與金屬之間的接觸電阻亦隨之上升，使得載子注入效率大幅衰減，進而降低元件之性能表現。
再者，我們提出以鐵氟龍薄膜作為載子注入層，穿插於五苯環通道層與源/汲極之間來改善上接觸式元件結構之電氣特性。其研究結果顯示，元件經由使用一點五奈米厚度之鐵氟龍載子注入層之後，其輸出電流與載子移動率的表現與未使用鐵氟龍載子注入層之元件相比，分別被提升了百分之七十五與百分之八十一。這可以歸因於鐵氟龍載子注入層的引入大幅降低了有機半導體與金屬之間的載子注入能障，並使載子能輕易地藉由穿隧效應進行傳輸，進而大幅提升載子注入效率。而載子注入效率的提升亦反映在元件之有機半導體與金屬之間的接觸電阻上，進而提升元件之性能表現。
最後，我們提出以雙層保護方法使用鐵氟龍與二氧化矽薄膜組合層來改善元件在大氣環境操作下之穩定度。其研究結果顯示，元件經由使用雙層保護之後，其性能表現與未使用保護層之元件近乎相似，這可以歸因於以熱蒸鍍系統所製備之鐵氟龍薄膜成功地扮演了緩衝層的角色，其不僅未破壞到底下之有機半導體層，而且可以有效地保護元件免受於二氧化矽濺鍍製程中所產生之電漿破壞。同時我們亦發現以雙層保護之元件操作在相對溼度介於百分之六十至八十之大氣環境下，其穩定度及使用壽命與未使用保護層之元件相比，可被大幅提升及改善。這可以歸因於二氧化矽薄膜具有優良的阻水氣性能，進而有效地防止大氣環境中之水氣滲入。

In this dissertation, we focus on the fabrication and characterization of the pentacene-based organic thin-film transistors (OTFTs) and use the proposed schemes to enhance the devices’ electrical performance and reliability. First, we present a simple deposition method to fabricate hydrophobic silicon dioxide (SiO2) as a gate insulator for pentacene-based OTFTs. The SiO2 gate insulator, which was deposited at 80°C by hollow-cathode chemical vapor deposition (HC-CVD) using a tetraethoxysilane (TEOS) precursor gas, contained hydrophobic methyl (CH3) functional groups due to incompletely dissociated TEOS molecules. These CH3 functional groups made the SiO2 surface more hydrophobic and, thus, facilitated crystalline growth of the pentacene film, resulting in device performance that could be comparable to OTFTs with SiO2-based gate insulators deposited at higher temperatures.
Second, we investigate the effect of polytetrafluoroethylene (Teflon) as a surface modification layer, which was deposited on the surface of gate insulator and source/drain (S/D) electrodes, on bottom-contact pentacene-based OTFTs. The inserted 1.5-nm-thick Teflon layer can enhance the device performance because of the improved molecular orientation in pentacene channel layer and reduced contact resistance (RC) between the pentacene channel layer and the S/D electrodes. The improved molecular orientation of pentacene channel layer is caused by the hydrophobic and smooth Teflon layer surface. The reduced RC is a result of the tunneling process at the Au/pentacene interface. This study also found that the device performance decreased as the Teflon layer increased in thickness. This is because of the increased RC and decreased carrier injection efficiency between the pentacene channel layer and the S/D electrodes. Compared to devices without a Teflon layer, the drain current (IDS) and field-effect mobility (μFE) of the devices with a 1.5-nm-thick Teflon layer can be increased by 93 and 105%, respectively.
Third, we demonstrate top-contact pentacene-based OTFTs fabricated by inserting a Teflon carrier injection layer between the pentacene channel layer and S/D electrodes. Compared to devices without a Teflon layer, the inserted 1.5-nm-thick Teflon layer can enhance the IDS and μFE by 75 and 81%, respectively. The improvements are attributed to the reduction of hole injection barrier and tunneling process at the Au/pentacene interface, which can be confirmed by the reduced contact resistance measured at linear region.
Finally, we present a bilayer passivation method using a Teflon and SiO2 combination layer to enhance the environmental reliability of pentacene-based OTFTs. The Teflon was deposited as a buffer layer using a thermal evaporator that exhibited good compatibility with the underlying pentacene layer, and can effectively protect the OTFTs from plasma damage during the SiO2 passivation process, resulting in a negligible initial performance drop in OTFTs. Furthermore, because of the excellent moisture barrier ability of SiO2, the OTFTs exhibited good time-dependent electrical performance, even after 168 h of aging in ambient air with 60%–80% relative humidity.

[1] C. Reese, M. Roberts, M. M. Ling, and Z. Bao, “Organic thin film transistor,” Materials Today, Vol. 7, No. 9, pp. 20–27 (2004).
[2] C. T. Tseng, Y. H. Cheng, M. C. M. Lee, C. C. Han, C. H. Cheng, and Y. T. Tao, “Study of anode work function modified by self-assembled monolayers on pentacene/fullerene organic solar cells,” Applied Physics Letters, Vol. 91, No. 23, pp. 233510–233510-3 (2007).
[3] H. M. Zhang and W. C. H. Choy, “Indium tin oxide modified by Au and vanadium pentoxide as an efficient anode for organic light-emitting devices,” IEEE Transactions on Electron Devices, Vol. 55, No. 9, pp. 2517–2520 (2008).
[4] H. Wang, Z. Ji, L. Shang, X. Liu, Y. Peng, and M. Liu, “Interface effect on the performance of rectifier based on organic diode,” IEEE Electron Device Letters, Vol. 31, No. 5, pp. 506–508 (2010).
[5] P. Cosseddu, S. Milita, and A. Bonfiglio, “Strain sensitivity and transport properties in organic field-effect transistors,” IEEE Electron Device Letters, Vol. 33, No. 1, pp. 113–115 (2012).
[6] A. Tsumura, K. Koezuka, and T. Ando, “Macromolecular electronic device: field-effect transistor with a polythiophene thin film,” Applied Physics Letters, Vol. 49, No. 18, pp. 1210–1212 (1986).
[7] G. Horowitz, D. Fichou, X. Z. Peng, Z. G. Xu, and F. Garnier, “A field-effect transistor based on conjugated alpha-sexithienyl,” Solid State Communications, Vol. 72, No. 4, pp. 381–384 (1989).
[8] J. M. Shaw and P. F. Seidler, “Organic electronics: introduction,” IBM Journal of Research and Development, Vol. 45, No. 1, pp. 3–9 (2001).
[9] N. Yoneya, M. Noda, N. Hirai, K. Nomoto, M. Wada, and J. Kasahara, “Reduction of contact resistance in pentacene thin-film transistors by direct carrier injection into a-few-molecular-layer channel,” Applied Physics Letters, Vol. 85, No. 20, pp. 4663–4665 (2004).
[10] C. S. Kim, S. J. Jo, S. W. Lee, W. J. Kim, H. K. Baik, S. J. Lee, D. K. Hwang, and S. Im, “High-k and low-k nanocomposite gate dielectrics for low voltage organic thin film transistors,” Applied Physics Letters, Vol. 88, No. 24, pp. 243515–243515-3 (2006).
[11] M. C. Kwan, K. H. Cheng, P. T. Lai, and C. M. Che, “Improved carrier mobility for pentacene TFT by NH3 annealing of gate dielectric,” Solid-State Electronics, Vol. 51, No. 1, pp. 77–80 (2007).
[12] C. S. Kim, S. J. Jo, J. B. Kim, S. Y. Ryu, J. H. Noh, H. K. Baik, S. J. Lee, and Y. S. Kim, “Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors,” Applied Physics Letters, Vol. 91, No. 6, pp. 063503–063503-3 (2007).
[13] C. H. Wang, S. W. Chen, and J. Hwang, “Ordering of pentacene in organic thin film transistors induced by irradiation of infrared light,” Applied Physics Letters, Vol. 95, No. 10, pp. 103302–103302-3 (2009).
[14] C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gundlach, T. N. Jackson, M. G. Kane, I. G. Hill, M. S. Hammond, J. Campi, B. K. Greening, J. Francl, and J. West, “Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates,” Applied Physics Letters, Vol. 80, No. 6, pp. 1088–1090 (2006).
[15] M. Mizukami, N. Hirohata, T. Iseki, K. Ohtawara, T. Tada, S. Yagyu, T. Abe, T. Suzuki, Y. Fujisaki, Y. Inoue, S. Tokito, and T. Kurita, “Flexible AM OLED panel driven by bottom-contact OTFTs,” IEEE Electron Device Letters, Vol. 27, No. 4, pp. 249–251 (2006).
[16] R. Wisnieff, “Display technology: printing screens,” Nature, Vol. 394, No. 6690, pp. 225–227 (1998).
[17] R. Rotzoll, S. Mohapatra, V. Olariu, R. Wenz, M. Grigas, K. Dimmlerb, O. Shchekin, and A. Dodabalapur, “Radio frequency rectifiers based on organic thin-film transistors,” Applied Physics Letters, Vol. 88, No. 12, pp. 123502–123502-3 (2006).
[18] C. D. Dimitrakopoulos and P. R. L. Malenfant “Organic thin film transistors for large area electronics,” Advanced Materials, Vol. 14, No. 2, pp. 99–117 (2002).
[19] T. Someya, T. Sekitani, S. Iba, Y. Kato, H. Kawaguchi, and T. Sakurai, “A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications,” Proceedings of the National Academy of Sciences of the United States of America, Vol. 101, No. 27, pp. 9966–9970 (2004).
[20] G. Horowitz, “Organic thin film transistors: from theory to real devices,” Journal of Materials Research, Vol. 19, No. 7, pp. 1946–1962 (2004).
[21] S. K. Park, Y. H. Kim, J. I. Han, D. G. Moon, and W. K. Kim, “High-performance polymer TFTs printed on a plastic substrate,” IEEE Transactions on Electron Devices, Vol. 49, No. 11, pp. 2008–2015 (2002).
[22] Z. Bao and J. Locklin, Organic field-effect transistors, CRC Press, Boca Raton (2007).
[23] Y. Yu, “Pentacene based organic electronic devices,” Ph.D dissertation, Durham University, England, UK (2010).
[24] S. Kobayashi, T. Takenobu, S. Mori, A. Fujiwara, and Y. Iwasa, “Fabrication and characterization of C60 thin-film transistors with high field-effect mobility,” Applied Physics Letters, Vol. 82, No. 25, pp. 4581–4583 (2003).
[25] G. Horowitz, “Organic field-effect transistors,” Advanced Materials, Vol. 10, No. 5, pp. 365–377 (1998).
[26] G. Horowitz and M. E. Hajlaoui, “Grain size dependent mobility in polycrystalline organic field-effect transistors,” Synthetic Metals, Vol. 122, No. 1, pp. 185–189 (2001).
[27] G. Horowitz, R. Hajlaoui, and P. Delannoy, “Temperature dependence of the field-effect mobility of sexithiophene. Determination of the density of traps,” Journal de Physique III France, Vol. 5, No. 4, pp. 355–371 (1995).
[28] A. R. Volkel, R. A. Street, and D. Knipp, “Carrier transport and density of state distributions in pentacene transistors,” Physical Review B, Vol. 66, No. 19, pp. 195336–195336-8 (2002).
[29] D. Kumaki, T. Umeda, and S. Tokito, “Reducing the contact resistance of bottom-contact pentacene thin-film transistors by employing a MoOx carrier injection layer,” Applied Physics Letters, Vol. 92, No. 1, pp. 013301–013301-3 (2008).
[30] C. R. Newman, C. D. Frisbie, D. A. da Silva Filho, J. L. Bredas, P. C. Ewbank, and K. R. Mann, “Introduction to organic thin film transistors and design of n-channel organic semiconductors,” Chemistry of Materials, Vol. 16, No. 23, pp. 4436–4451 (2004).
[31] S. Schiefer, M. Huth, A. Dobrinevski, and B. Nickel, “Determination of the crystal structure of substrate-induced pentacene polymorphs in fiber structured thin films,” Journal of the American Chemical Society, Vol. 129, No. 34, pp. 10316–10317 (2007).
[32] L. Torsi, A. Dodabalapur, L. J. Rothberg, A. W. P. Fung, and H. E. Katz, “Charge transport in oligothiophene field-effect transistors,” Physical Review B, Vol. 57, No. 4, pp. 2271–2275 (1998).
[33] J. R. Brews, K. K. Ng, and R. K. Watts, Submicron integrated circuits, John Wiley and Sons, NY, pp. 9–86 (1989).
[34] R. P. S. Thakur, Y. Chen, E. H. Poindexter, and R. Singh, “Silicon based ultrathin dielectrics,” The Electrochemical Society Interface, Vol. 8, No. 2, pp. 20–23 (1999).
[35] R. Singh, V. Parihar, K. F. Poole, and K. Rajkanan, “Semiconductor manufacturing in the 21st Century,” Semiconductor Fabtech, 9th Edition, pp. 223–232 (1999).
[36] S. Steudel, S. D. Vusser, S. D. Jonge, D. Janssen, S. Verlaak, J. Genoe, and P. Heremans, “Influence of the dielectric roughness on the performance of pentacene transistors,” Applied Physics Letters, Vol. 85, No. 19, pp. 4400–4402 (2004).
[37] K. Suemori, S. Uemura, M. Yoshida, S. Hoshino, N. Takada, T. Kodzasa, and T. Kamata, “Influence of fine roughness of insulator surface on threshold voltage stability of organic field-effect transistors,” Applied Physics Letters, Vol. 93, No. 3, pp. 033308–033308-3 (2008).
[38] U. K. N. Narayanan, S. D. Seignon, and J. M. Nunzi, “Improved performance of pentacene field-effect transistors using a polyimide gate dielectric layer,” Journal of Physics D: Applied Physics, Vol. 38, No. 8, pp. 1148–1151 (2005).
[39] H. W. Zan, K. H. Yen, P. K. Liu, K. H. Ku, C. H. Chen, and J. Hwang, “Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator,” Organic Electronics, Vol. 8, No. 4, pp. 450–454 (2007).
[40] A. Lodha and R. Singh, “Prospects of manufacturing organic semiconductor-based integration circuits,” IEEE Transactions on Semiconductor Manufacturing, Vol. 14, No. 3, pp. 281–296 (2001).
[41] T. Yasuda, T. Goto, K. Fujita, and T. Tsutsui, “Ambipolar carrier transport in polycrystalline pentacene thin-film transistors,” Molecular Crystals and Liquid Crystals, Vol. 444, No. 1, pp. 219–224 (2006).
[42] K. Shibata, K. Ishikawa, H. Takezoe, H. Wada, and T Mori, “Contact resistance of dibenzotetrathiafulvalene-based organic transistors with metal and organic electrodes,” Applied Physics Letters, Vol. 92, No. 2, pp. 023305–023305-3 (2008).
[43] N. Takahashi, A. Maeda, K. Uno, E. Shikoh, Y. Yamamoto, H. Hori, Y. Kubozono, and A. Fujiwara, “Output properties of C60 field-effect transistors with different source/drain electrodes,” Applied Physics Letters, Vol. 90, No. 8, pp. 083503–083503-3 (2007).
[44] K. Ochi, T. Nagano, T. Ohta, R. Nouchi, Y. Kubozono, Y. Matsuoka, E. Shikoh, and A. Fujiwara, “Output properties of C60 field-effect transistor device with Eu source/drain electrodes,” Applied Physics Letters, Vol. 89, No. 8, pp. 083511–083511-3 (2006).
[45] H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, “Contact resistance in organic thin-film transistors,” Solid-State Electronics, Vol. 47, No. 2, pp. 297–301 (2003).
[46] D. J. Yun, D. K. Lee, H. K. Jeon, and S. W. Rhee, “Contact resistance between pentacene and indium–tin oxide (ITO) electrode with surface treatment,” Organic Electronics, Vol. 8, No. 6, pp. 690–694 (2007).
[47] J. Park, J. M. Kang, D. W. Kim, and J. S. Choi, “Contact resistance variation in top-contact organic thin-film transistors with the deposition rate of Au source/drain electrodes,” Thin Solid Films, Vol. 518, No. 22, pp. 6232–6235 (2010).
[48] H. Ishii, K. Sugiyama, E. Ito, and K. Seki, “Energy level alignment and interfacial electronic structures at organic/metal and organic/organic interfaces,” Advanced Materials, Vol. 11, No. 8, pp. 605–625 (1999).
[49] N. Koch, A. Kahn, J. Ghijsen, J. J. Pireaux, J. Schwartz, R. L. Johnson, and A. Elschner, “Conjugated organic molecules on metal versus polymer electrodes: demonstration of a key energy level alignment mechanism,” Applied Physics Letters, Vol. 82, No.1, pp. 70–72 (2003).
[50] S. C. Veenstra and H. T. Jonkman, “Energy-level alignment at metal/organic and organic/organic interfaces,” Journal of Polymer Science Part B: Polymer Physics, Vol. 41, No. 21, pp. 2549–2560 (2003).
[51] A. Kahn, N. Koch, and W. Gao, “Electronic structure and electrical properties of interfaces between metals and π-conjugated molecular films,” Journal of Polymer Science Part B: Polymer Physics, Vol. 41, No. 21, pp. 2529–2548 (2003).
[52] D. J. Gundlach, L. Zhou, J. A. Nichols, T. N. Jackson, P. V. Necliudov, and M. S. Shur, “An experimental study of contact effects in organic thin film transistors,” Journal of Applied Physics, Vol. 100, No. 2, pp. 024509–024509-13 (2006).
[53] F. Li, A. Nathan, Y. Wu, and B. S. Ong, Organic thin film transistor integration: A hybrid approach, John Wiley and Sons, NY, pp. 13–49 (2011).
[54] E. Cantatore, T. C. T. Geuns, G. H. Gelinck, E. van Veenendaal, A. F. A. Gruijthuijsen, L. Schrijnemakers, S. Drews, and D. M. de Leeuw, “A 13.56-MHz RFID system based on organic transponders,” IEEE Journal of Solid-State Circuits, Vol. 42, No. 1, pp. 84–92 (2007).
[55] H. W. Zan, W. W. Tsai, Y. R. Lo, Y. M. Wu, and Y. S. Yang, “Pentacene-based organic thin film transistors for ammonia sensing,” IEEE Sensors Journal, Vol. 12, No. 3, pp. 594–601 (2012).
[56] L. Zhou, S. Park, B. Bai, J. Sun, S. C. Wu, T. N. Jackson, S. Nelson, D. Freeman, and Y. Hong, “Pentacene TFT driven AM OLED displays,” IEEE Electron Device Letters, Vol. 26, No. 9, pp. 640–642 (2005).
[57] T. Yamamoto, Y. Nakajima, T. Takei, Y. Fujisaki, H. Fukagawa, M. Suzuki, G. Motomura, H. Sato, S. Tokito, and H. Fujikake, “New driving scheme to improve hysteresis characteristics of organic thin film transistor-driven active-matrix organic light emitting diode display,” Japanese Journal of Applied Physics, Vol. 50, No. 2, pp. 024201–024201-4 (2011).
[58] J. W. Lee, J. W. Chang, D. J. Kim, Y. S. Yoon, and J. K. Kim, “Performance improvement of organic thin-film transistors by electrode/pentacene interface treatment using a hydrogen plasma,” IEEE Electron Device Letters, Vol. 28, No. 5, pp. 379–382 (2007).
[59] S. E. Fritz, T. W. Kelley, and C. D. Frisbie, “Effect of dielectric roughness on performance of pentacene TFTs and restoration of performance with a polymeric smoothing layer,” The Journal of Physical Chemistry B, Vol. 109, No. 21, pp. 10574–10577 (2005).
[60] K. Shin, C. Yang, S. Y. Yang, H. Jeon, and C. E. Park, “Effects of polymer gate dielectrics roughness on pentacene field-effect transistors,” Applied Physics Letters, Vol. 88, No. 7, pp. 072109–072109-3 (2006).
[61] G. T. Liang and F. C. N.Hong, “Diamond growth by hollow cathode arc plasma chemical vapor deposition,” Journal of Materials Research, Vol. 13, No. 11, pp. 3114–3121 (1998).
[62] C. L. Fan, Y. Y. Lin, and S. K. Wang, “Hollow-cathode CVD N2 plasma treatment for performance and reliability improvement of LTPS-TFTs,” IEEE Electron Device Letters, Vol. 33, No. 3, pp. 387–389 (2012).
[63] W. J. Patrick, G. C. Schwartz, J. D. Chapple-Sokol, R. Carruthers, and K. Olsen, “Plasma-enhanced chemical vapor deposition of silicon dioxide films using tetraethoxysilane and oxygen: characterization and properties of films,” Journal of The Electrochemical Society, Vol. 139, No. 9, pp. 2604–2613 (1992).
[64] M. R. Baklanov, L. L. Vasilyeva, T. A. Gavrilova, F. N. Dultsev, K. P. Mogilnikov, and L. A. Nenasheva, “Porous structure of SiO2 films synthesized at low temperature and pressure,” Thin Solid Films, Vol. 171, No. 1, pp. 43–52 (1989).
[65] I. Idris and O. Sugiura, “Film characteristics of low-temperature plasma-enhanced chemical vapor deposition silicon dioxide using tetraisocyanatesilane and oxygen,” Japanese Journal of Applied Physics, Vol. 37, No. 12A, pp. 6562–6568 (1998).
[66] S. C. Deshmukh and E. S. Aydil, “Low‐temperature plasma enhanced chemical vapor deposition of SiO2,” Applied Physics Letters, Vol. 65, No. 25, pp. 3185–3187 (1994).
[67] C. Vallee, A. Goullet, F. Nicolazo, A. Granier, and G. Turban, “In situ ellipsometry and infrared analysis of PECVD SiO2 films deposited in an O2/TEOS helicon reactor,” Journal of Non-Crystalline Solids, Vol. 216, pp. 48–54 (1997).
[68] W. K. Kim, K. Hong, and J. L. Lee, “Enhancement of hole injection in pentacene organic thin-film transistor of O2 plasma-treated Au electrodes,” Applied Physics Letters, Vol. 89, No. 14, pp. 142117–142117-3 (2006).
[69] D. H. Kim, H. S. Lee, H. Yang, L. Yang, and K. Cho, “Tunable crystal nanostructures of pentacene thin films on gate dielectric processing surface-order control,” Advanced Functional Materials, Vol. 18, No. 9, pp. 1363–1370 (2008).
[70] S. C. Lim, S. H. Kim, J. H. Lee, M. K. Kim, D. J. Kim, and T. Zyung, “Surface-treatment effects on organic thin-film transistors,” Synthetic Metals, Vol. 148, No. 1, pp. 75–79 (2005).
[71] K. X. Ma, C. H. Ho, F. Zhu, and T. S. Chung, “Investigation of surface energy for organic light emitting polymers and indium tin oxide,” Thin Solid Films, Vol. 371, No. 1–2, pp. 140–147 (2000).
[72] S. I. Shin, J. H. Kwon, J. H. Seo, and B. K. Ju, “Effect of modifying a methyl siloxane-based dielectric by a polymer thin film for pentacene thin-film transistors,” Applied Surface Science, Vol. 254, No. 21, pp. 6987–6990 (2008).
[73] L. F. Drummy and D. C. Martin, “Thickness-driven orthorhombic to triclinic phase transformation in pentacene thin films,” Advanced Materials, Vol. 17, No. 7, pp. 903–907 (2005).
[74] M. Yoshida, S. Uemura, T. Kodzasa, T. Kamata, M. Matsuzawa, and T. Kawai, “Surface potential control of an insulator layer for the high performance organic FET,” Synthetic Metals, Vol. 137, No. 1–3, pp. 967–968 (2003).
[75] W. Y. Chou, C. W. Kuo, H. L. Cheng, Y. R. Chen, F. C. Tang, F. Y. Yang, D. Y. Shu, and C. C. Liao, “Effect of surface free energy in gate dielectric in pentacene thin-film transistors,” Applied Physics Letters, Vol. 89, No. 11, pp. 112126–112126-3 (2006).
[76] S. C. Deshmukh and E. S. Aydil, “Investigation of SiO2 plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy,” Journal of Vacuum Science and Technology A, Vacuum, Surfaces, and Films, Vol. 13, No. 5, pp. 2355–2367 (1995).
[77] C. Vallee, A. Goullet, A. Granier, A. van der Lee, J. Durand, and C. Marliere, “Inorganic to organic crossover in thin films deposited from O2/TEOS plasmas,” Journal of Non-Crystalline Solids, Vol. 272, No. 2–3, pp. 163–173 (2000).
[78] J. H. Lee, C. H. Jeong, J. T. Lim, N. G. Jo, S. J. Kyung, and G. Y. Yeom, “Characteristic of SiO2 films deposited by using low-temperature PECVD with TEOS/N2/O2 ,” Journal of the Korean physical Society, Vol. 46, No. 4, pp. 890–894 (2005).
[79] A. D. Carlo, F. Piacenza, A. Bolognesi, B. Stadlober, and H. Maresch, “Influence of grain sizes on the mobility of organic thin-film transistors,” Applied Physics Letters, Vol. 86, No. 26, pp. 263501–263501-3 (2005).
[80] H. S. Tan, T. Cahyadi, Z. B. Wang, A. Lohani, Z. Tsakadze, S. Zhang, F. R. Zhu, and S. G. Mhaisalkar, “Low-temperature-processed inorganic gate dielectrics for plastic-substrate-based organic field-effect transistors,” IEEE Electron Device Letters, Vol. 29, No. 7, pp. 698–700 (2008).
[81] C. L. Fan, P. C. Chiu, and C. C. Lin, “Low-temperature-deposited SiO2 gate insulator with hydrophobic methyl groups for bottom-contact organic thin-film transistors,” IEEE Electron Device Letters, Vol. 31, No. 12, pp. 1485–1487 (2010).
[82] C. L. Fan, P. C. Chiu, Y. H. Yang, and C. C. Lin, “Low-temperature-processed (< 100°C) organic thin-film transistor using hollow-cathode CVD SiO2 as the gate insulator,” Semiconductor Science and Technology, Vol. 25, No. 7, pp. 075006–075006-5 (2010).
[83] R. Tinivella, V. Camarchia, M. Pirola, S. Shen, and G. Ghione, “Simulation and design of OFET RFIDs through an analog/digital physics-based library,” Organic Electronics, Vol. 12, No. 8, pp. 1328–1335 (2011).
[84] H. W. Zan, M. Z. Dai, T. Y. Hsu, H. C. Lin, H. F. Meng, and Y. S. Yang, “Porous organic TFTs for the applications on real-time and sensitive gas sensors,” IEEE Electron Device Letters, Vol. 32, No. 8, pp. 1143–1145 (2011).
[85] S. Ohta, T. Chuman, S. Miyaguchi, H. Satoh, T. Tanabe, Y. okuda and M. Tsuchida, “Active matrix driving organic light-emitting diode panel using organic thin-film transistors,” Japanese Journal of Applied Physics, Vol. 44, No. 6A, pp. 3678–3681 (2005).
[86] B. T. Wu, Y. K. Su, M. L. Tu, A. C. Wang, Y. S. Chen, Y. Z. Chiou, Y. T. Chiou, and C. H. Chu, “Interface modification in organic thin film transistors,” Japanese Journal of Applied Physics, Vol. 44, No. 4B, pp. 2783–2786 (2005).
[87] K. S. Pyo and C. K. Song, “The effects of simultaneous treatment of SiO2 gate and Au electrode with octadecyltrichlorosilane and charge transfer molecules on characteristics of pentacene thin film transistors,” Thin Solid Films, Vol. 485, No. 1–2, pp. 230–234 (2005).
[88] S. W. Rhee and D. J. Yun, “Metal–semiconductor contact in organic thin film transistors,” Journal of Materials Chemistry, Vol. 18, No. 45, pp. 5437–5444 (2008).
[89] H. Wang, L. Wang, Y. Gao, D. Zhang, and Y. Qiu, “Efficient organic light-emitting diodes with teflon as buffer layer,” Japanese Journal of Applied Physics, Vol. 43, No. 10B, pp. L1353–L1355 (2004).
[90] L. A. Girifalco and R. J. Good, “A theory for the estimation of surface and interfacial energies. I. derivation and application to interfacial tension,” The Journal of Physical Chemistry, Vol. 61, No. 7, pp. 904–909 (1957).
[91] Y. Hosoi, K. Okamura, Y. Kimura, H. Ishii, and M. Niwano, “Infrared spectroscopy of pentacene thin film on SiO2 surface,” Applied Surface Science, Vol. 244, No. 1–4, pp. 607–610 (2005).
[92] A. L. Deman, M. Erouel, D. Lallemand, M. P. Goutorbe, P. Lane, and J. Tardy, “Growth related properties of pentacene thin film transistors with different gate dielectrics,” Journal of Non-Crystalline Solids, Vol. 354, No. 15–16, pp. 1598–1607 (2008).
[93] S. S. Cheng, C. Y. Yang, C. W. Ou, Y. C. Chuang, M. C. Wu, and C. W. Chu, “Pentacene thin-film transistor with PVP-capped high-k MgO dielectric grown by reactive evaporation,” Electrochemical and Solid-State Letters, Vol. 11, No. 5, pp. H118–H120 (2008).
[94] B. Kang, L. W. Tan, and S. R. P. Silva, “Fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics,” Applied Physics Letters, Vol. 93, No. 13, pp. 133302–133302-3 (2008).
[95] Y. Gao, L. Wang, D. Zhang, L. Duan, G. Dong, and Y. Qiu, “Bright single-active layer small-molecular organic light-emitting diodes with a polytetrafluoroethylene barrier,” Applied Physics Letters, Vol. 82, No. 2, pp. 155–157 (2003).
[96] M. Fadlallah, G. Billiot, W. Eccleston, and D. Barclay, “DC/AC unified OTFT compact modeling and circuit design for RFID applications,” Organic Electronics, Vol. 51, No. 5, pp. 1047–1051 (2007).
[97] P. Lin and F. Yan, “Organic thin-film transistors for chemical and biological sensing,” Advanced Materials, Vol. 24, No. 1, pp. 34–51 (2012).
[98] Y. Nakajima, T. Takei, T. Tsuzuki, M. Suzuki, H. Fukagawa, T. Yamamoto, and S. Tokito, “Fabrication of 5.8-in. OTFT-driven flexible color AMOLED display using dual protection scheme for organic semiconductor patterning,” Journal of the Society for Information Display, Vol. 17, No. 8, pp. 629–634 (2009).
[99] N. J. Watkins, L. Yan, and Y. Gao, “Electronic structure symmetry of interfaces between pentacene and metals,” Applied Physics Letters, Vol. 80, No. 23, pp. 4384–4386 (2002).
[100] Z. Wu, L. Wang, H. Wang, Y. Gao, and Y. Qiu, “Charge tunneling injection through a thin teflon film between the electrodes and organic semiconductor layer: Relation to morphology of the teflon film,” Physical Review B, Vol. 74, No. 16, pp. 165307–165307-7 (2006).
[101] Y. J. Lin, Y. C. Li, T. C. Wen, L. M. Huang, Y. K. Chen, H. J. Yeh, and Y. H. Wang, “Improvement of transparent organic thin film transistor performance by inserting a lithium fluoride buffer layer,” Applied Physics Letters, Vol. 93, No. 4, pp. 043305–043305-3 (2008).
[102] R. Hajlaoui, G. Horowitz, F. Garnier, A. A. Arce-Brouchet, L. Laigre, A. E. Kassmi, F. Demanze, and F. Kouki, “Improved field-effect mobility in short oligothiophenes: Quaterthiophene and quinquethiophene,” Advanced Materials, Vol. 9, No. 5, pp. 389–391 (1997).
[103] W. Hu, Y. Zhao, C. Ma, J. Hou, and S. Liu, “Improving the performance of organic thin-film transistor with a doped interlayer,” Microelectronics Journal, Vol. 38, No. 4–5, pp. 509–512 (2007).
[104] X. Yan, J. Wang, H. Wang, H. Wang, and D. Yan, “Improved n-type organic transistors by introducing organic heterojuction buffer under source/drain electrodes,” Applied Physics Letters, Vol. 89, No. 5, pp. 053510–053510-3 (2006).
[105] K. Myny, S. Steudel, S. Smout, P. Vicca, F. Furthner, B. van der Putten, A. K. Tripathi, G. H. Gelinck, J. Genoe, W. Dehaene, and P. Heremans, “Organic RFID transponder chip with data rate compatible with electronic product coding,” Organic Electronics, Vol. 11, No. 7, pp. 1176–1179 (2010).
[106] F. Buth, D. Kumar, M. Stutzmann, and J. A. Garrido, “Electrolyte-gated organic field-effect transistors for sensing applications,” Applied Physics Letters, Vol. 98, No. 15, pp. 153302–153302-3 (2011).
[107] S. Goettling, B. Diehm, and N. Fruehauf, “Active matrix OTFT display with anodized gate dielectric,” Journal of Display Technology, Vol. 4, No. 3, pp. 300–303 (2008).
[108] Y. Qiu, Y. Hu, G. Dong, L. Wang, J. Xie, and Y. Ma, “H2O effect on the stability of organic thin-film field-effect transistors,” Applied Physics Letters, Vol. 83, No. 8, pp. 1644–1646 (2003).
[109] S. H. Han, J. H. Kim, J. Jang, S. M. Cho, M. H. Oh, S. H. Lee, and D. J. Choo, “Lifetime of organic thin-film transistors with organic passivation layers,” Applied Physics Letters, Vol. 88, No. 7, pp. 073519–073519-3 (2006).
[110] Y. G. Tropsha and N. G. Harvey, “Activated rate theory treatment of oxygen and water transport through silicon oxide/poly(ethylene terephthalate) composite barrier structures,” The Journal of Physical Chemistry B, Vol. 101, No. 13, pp. 2259–2266 (1997).
[111] K. C. Liu, H. L. Cheng, J. R. Tsai, Y. L. Chiang, Y. C. Hsieh, and D. J. Jan, “Investigation of SiOxCy film as the encapsulation layer for full transparent OLED using hollow cathode discharge plasma at room temperature,” Thin Solid Films, Vol. 518, No. 22, pp. 6195–6198 (2010).
[112] J. S Hong, S. M. Kim, and K. H. Kim, “Preparation of SiO2 passivation thin film for improved the organic light-emitting device life time,” Japanese Journal of Applied Physics, Vol. 50, No. 8, pp. 08KE02–08KE02-5 (2008).
[113] T. Ahn, H. J. Suk, J. Won, and M. H. Yi, “Extended lifetime of pentacene thin-film transistor with polyvinyl alcohol (PVA)/layered silicate nanocomposite passivation layer,” Microelectronic Engineering, Vol. 86, No.1, pp. 41–46 (2009).
[114] C. L. Fan, T. H. Yang, and P. C. Chiu, “Performance improvement of bottom-contact pentacene-based organic thin-film transistors by inserting a thin polytetrafluoroethylene buffer layer,” Applied Physics Letters, Vol. 97, No. 14, pp. 143306–143306-3 (2010).
[115] B. Kang, L. W. Tan, and S. R. P. Silva, “Fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics,” Applied Physics Letters, Vol. 93, No. 13, pp. 133302–133302-3 (2008).
[116] T. Diekmann, C. Pannemann, and U. Hilleringmann, “Dielectric layers for organic field effect transistors as gate dielectric and surface passivation,” Physica Status Solidi A-Applications and Materials Science, Vol. 205, No. 3, pp. 564–577 (2008).
[117] M. Rapisarda, D. Simeone, G. Fortunato, A. Valletta, and L. Mariucci, “Pentacene thin film transistors with (polytetrafluoroethylene) PTFE-like encapsulation layer,” Organic Electronics, Vol. 12, No. 1, pp. 119–124 (2011).
[118] Z. T. Zhu, J. T. Mason, R. Dieckmann, and G. G. Malliaras, “Humidity sensors based on pentacene thin-film transistors,” Applied Physics Letters, Vol. 81, No. 24, pp. 4643–4645 (2002).