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研究生: 周平利
Billion - Abraham
論文名稱: 以權重式元件面積配置為基礎來優化並實現關鍵比率之類比積體電路
The Optimization and Implementation of Weight-Based Device Area Allocation for Ratio-Critical Analog Integrated Circuit
指導教授: 陳伯奇
Poki Chen
口試委員: 黃育賢
Yuh-Shyan Hwang
陳建中
Jiann-Jong Chen
鍾勇輝
Yung-Hui Chung
學位類別: 碩士
Master
系所名稱: 電資學院 - 電子工程系
Department of Electronic and Computer Engineering
論文出版年: 2016
畢業學年度: 104
語文別: 英文
論文頁數: 94
中文關鍵詞: 元件面積配置二進位權重電路以INL為基礎之良率優化積體電路製程變異
外文關鍵詞: Device area allocation, INL-based yield optimization, process variation, random mismatch
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隨著製程演進,電晶體 的尺寸越縮越小,積體電路的效能受製程變異的影響越趨明顯。以最受認可的 Pelgrom 模型為例,元件面積越小所會遭遇的隨機誤配越大,將使晶片的效能劣化。設計者不能再專注於電路改善而已,佐以良好的佈局考量已是成功的不二法門。
先前有關元件佈局面積的研究雖有相當成效,但仍屬逐案討論的範疇,缺乏一般性的通則,常常讓工程師在面對未知的設計時感到無所適從。尤有甚者,該些論文皆只提供接近最佳種況的模擬而已,欠缺足夠的理論奧援,較難令人信服。為此,本論文將儘量提供精確的數學分析以支持我們所提出的元件面積優化配置,更將提出一般化的元件面積配置建議,讓工程師在面臨從未遇過的設計時能有所依循,減輕他們疑惑與負擔。相關的元件面積配置都以優化 INL 良率為目標。本論文將論及數種指標性類比電路關鍵元件的面積配置,相關的模擬與分析結果全然相符,測試元件的量測結果也證明本論文的面積配置建議確實優於以往。最後,我們也將試做一 10 位元 R-2R 架構之數位至類比轉換器,以展現本論文元件面積配置方法之優異性。


With device size shrinking of technology evolution, process variation becomes a very critical issue in designing integrated circuits (IC). According to Pelgrom’s model, the smaller device’s size, the larger random mismatch is and it makes the chip performance worse. Not only design, but also layout is very important nowadays for engineers to consider. Previously, the study of area allocation strategy was case-by-case only and did not propose general formulation to fully cover all design cases. Moreover, it was merely verified by selected simulations around the optimum. Mathematical calculation instead of theoretical analysis was made. However, the simulation results showed some discrepancies with the calculation. In this thesis, we would like to present not only theoretical study to cover all representative cases but also INL-based yield simulation to prove the excellence of the proposed weight-based area allocation strategy to ease the burden of all layout engineers. The results show that the calculation matches the simulation. Furthermore, a 10-bit R-2R digital-to-analog converter in a TSMC 0.18 μm standard process has been designed along with this area allocation strategy. Pre-simulation and post-simulation results prove that the mismatch is reduced significantly.

中文摘要 i Abstract ii Table of Contents iii List of Figures vi List of Tables ix Chapter 1 1 Introduction 1 1.1 Motivation 1 1.2 Thesis Organization 4 Chapter 2 5 Process Variation and Area Allocation Strategy Overview 5 2.1 Process Variation 5 2.2 Mismatch 6 2.3 Pelgrom’s Model 9 2.4 Binary Weighted Circuit Area Allocation Strategy Overview 10 Chapter 3 15 Statistical Analysis and INL-Yield Simulation 15 3.1 Statistical Analysis of Process Variation 15 3.2 INL-Based Yield Optimization Overview 18 3.3 Binary Weighted Circuits 20 3.3.1 Binary Weighted Circuits with Dummy 21 3.3.2 Binary Weighted Circuits without Dummy 25 3.4 R-2R Ladder 28 3.4.1 Simple R-2R Ladder 29 3.4.2 Segmented R-2R Ladder 33 Chapter 4 40 Practical Implementation of R-2R Ladder Digital-to-Analog Circuit 40 4.1 Introduction 40 4.2 Design Implementation 41 4.2.1 R-2R Ladder (LSB part) 45 4.2.2 R Matrix (MSB Part) 47 4.2.3 4-bit Decoder 49 4.2.4 Differential Switch 49 4.2.5 Deglitcher 50 4.3 Layout Implementation 57 4.3.1 Decoder 57 4.3.2 Deglitcher 59 4.3.3 Differential NMOS Switches 59 4.3.4 R-2R Ladder (LSB part) 60 4.3.5 R Matrix (MSB Part) 62 Chapter 5 65 Simulation Results 65 5.1 Pre-Simulation 65 5.1.1 Current Consumption 66 5.1.2 INL/DNL (Monte Carlo Simulation) 68 5.1.3 Transient Response and SFDR 70 5.1.4 Corner Simulation 71 5.2 Post-Simulation 73 5.2.1 Current Consumption 73 5.2.2 INL/DNL 73 5.2.3 SFDR 76 5.3 Comparison with Other R-2R DAC 76 Chapter 6 77 Conclusion 77 References 78

[1] K. Argawal and S. Nassif, "Characterizing Process Variation in Nanometer CMOS," 44th ACM/IEEE Design Automation Conference, pp. 396-399, 2007.
[2] B. Liu, F. V. Fernandez, and G. G. E. Gielen, "Efficient and Accurate Statistical Analog Yield Optimization and Variation-Aware Circuit Sizing Based on Computational Intelligence Techniques," IEEE Trans. Comp.-Aided Design of ICs and Systems, vol. 30, no. 6, pp. 793-805, June 2011.
[3] M. J. M. Pelgrom, C. J. Duinmaijer, and A. P. G. Welbers, "Matching Properties of MOS Transistors," IEEE J. Solid-State Circuits, vol. 24, no. 5, pp. 1433-1439, October 1989.
[4] Y. Lin, D. J. Chen, and R. Geiger, "Yield enhancement with optimal area allocation for ratio critical analog circuits," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 53, pp. 534-553, March 2006.
[5] N. Z. Butt and J. B. Johnson, "Modeling and Analysis of Transistor Mismatch Due to Variability in Short-Channel Effect Induced by Random Dopant Fluctuation," IEEE Electron Device Letters, vol. 33, no. 8, August 2012.
[6] T. Zeng and D. Chen, "An Order-Statistics Based Matching Strategy for Circuit Components in Data Converters," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 60, no. 1, January 2013.
[7] J. A. Fredenburg and M. P. Flynn, "Statistical Analysis of ENOB and Yield in Binary Weighted ADCs and DACs With Random Element Mismatch," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 59, no. 7, July 2012.
[8] G. Leger, E. J. Peralias, A. Rueda, and J. L. Huertas, "Impact on Random Channel Mismatch on the SNR and SFDR of Time-Interleaved ADCs," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 51, no. 1, January 2004.
[9] D. Boning and S. Nassif, "Models of Process Variations in Device and Interconnect," in Design of High-Performance Microprocessor Circuits, A. Chandrakasan, W. J. Bowhill, and F. Fox, Eds.: Wiley-IEEE Press, 2000, ch. 6, pp. 98-116.
[10] F. Jianxin and S. S. Sapatnekar, "Accounting for inherent circuit resilience and process variations in analyzing gate oxide reliability," in Design Automation Conference (ASP-DAC), 16th Asia and South Pacific, Yokohama, 2011, pp. 689-694.
[11] S.R. Sarangi et al., "VARIUS: A Model of Process Variation and Resulting Timing Errors for Microarchitects," IEEE Trans. Semiconductor Manufacturing, vol. 21, no. 1, pp. 3-13, February 2008.
[12] P. G. Drennan and C. C. McAndrew, "Understanding MOSFET Mismatch for Analog Design," IEEE J. Solid-State Circuits, vol. 38, no. 3, pp. 450-456, March 2003.
[13] K. J. Kuhn et al., "Process Technology Variation," IEEE Trans. Electron Devices, vol. 58, no. 8, pp. 2197-2208, Aug. 2011.
[14] C. Webb, "45 nm design for manufacturing," Intel Technology J., vol. 12, pp. 121-130, June 2008.
[15] J.A. Croon, S. Decoutere, W. Sansen, and H.E. Maes, "Physical modeling and prediction of the matching properties of MOSFETs," in Solid-State Device Research conference, ESSDERC 2004. Proceeding of the 34th European, 2004, pp. 193-196.
[16] A. Hastings, The art of analog layout, 2nd ed.: Pearson Prentice Hall, 2006.
[17] C-W. Lin, J-M. Lin, Y-C. Chiu, C-P. Huang, and S-J. Chang, "Common-centroid capacitor placement considering systematic and random mismatches in analog integrated circuits," in Design Automation Conference (DAC), 2011 48th ACM/EDAC/IEEE, 2011, pp. 528-533.
[18] J. P. A. van der Wagt, G. G. Chu, and C. L. Conrad, "A Layout Structure for Matching Many Integrated Resistors," IEEE Trans. Circuits and Systems I, vol. 51, no. 1, pp. 186-190, January 2004.
[19] J. B. Shyu et al., "Random Errors in MOS Capacitors," IEEE J. Solid-State Circuits, vol. SC-17, pp. 948-955, December 1982.
[20] J. B. Shyu et al., "Random error effects in matched MOS capacitors and current sources," IEEE J. Solid-State Circuits, vol. SC-19, pp. 1070-1076, December 1984.
[21] A. Widodo, Weight-Based Device Area Allocation for Close-to-Optimum INL-Based Yield in Integrated Circuit. Taipei, Taiwan, 2013, NTUST, Master Degree Thesis.
[22] S. R. Nassif, "Modeling and Analysis of Manufacturing Variations," in IEEE Conference on Custom Integrated Circuits, 2001, pp. 223-228.
[23] J. L. McCreary and P. R. Gray, "All-MOS charge redistribution analog-to-digital conversion techniques. I," IEEE J. Solid-State Circuits, vol. 10, no. 6, pp. 371-379, December 1975.
[24] A. Van den Bosch, M. A. F. Borremans, M. S. J. Steyaert, and W. Sansen, "A 10-bit 1-GSample/s Nyquist Current-Steering CMOS D/A Converter," IEEE J. Solid-State Circuits, vol. 36, no. 3, pp. 315-324, March 2001.
[25] K. O. Andersson and M. Vesterbacka, "A Yield-Enhancement Strategy for Binary-Weighted DACs," , 2005, p. Proc. 2005 European Conf. Circuit Theory and Design.
[26] T. Chawla, A. Amara, and and A. Vladimirescu, "Yield, power and performance optimization for low power clock network under parametric variations in nanometer scale design," in Int. Midwest Symp. on Circuits and Syst., 2006, pp. 231-235.
[27] F. N. Najm, N. Menezes, and I. A. Ferzli, "A yield model for integrated circuits and its application to statistical timing analysis," IEEE Trans. Computer-Aided Design of Integrated Circuit and Systems, vol. 26, no. 3, pp. 574-591, March 2007.
[28] J. A. Schoeff, "An Inherently Monotonic 12 Bit DAC," IEEE J. Solid-State Circuits, vol. SC-14, no. 6, pp. 904-911, December 1979.
[29] W. H. Tseng and P. C. Chiu, "A 960MS/s DAC with 80dB SFDR in 20nm CMOS for Multi-Mode Baseband Wireless Transmitter," in Symposium on VLSI Circuits Digest of Technical Papers, 2014.
[30] D. Marche and D. Savaria, "Modeling R-2R Segmented-Ladder DACs," IEEE Trans. Circuits Syst. I, vol. 57, no. 1, pp. 31-43, January 2010.
[31] N. V. Uma Reddy, Rajesh Babu C., and M. V. Chaitanyakumar, "A 4 bit 5GHz R-2R Digital to Analog Converter using Hetrojunction HEMT," in International Conference on Emerging Trends in Communication, Control, Signal Processing and Computing Applications, 2013.
[32] Wenjuan Guo et al., "An Area- and Power-Efficient Iref Compensation Technique for Voltage-Mode R-2R DACs," IEEE Transactions on Circuits and Systems-II:Express Briefs, vol. 62, no. 7, pp. 656-660, July 2015.
[33] You Li and Degang Chen, "A Novel 20-Bit R-2R DAC Structure Based on Ordered Element Matching," in IEEE International Symposium on Circuits and Systems, Lisbon, 2015, pp. 1030-1033.

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