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| 研究生： |
鍾志昇 Che-Sheng Chung |
|---|---|
| 論文名稱： |
適用於金氧半場效電晶體電氣模型之低溫低電場先進量子工程理論研究 Low-Field Low-Temperature One-Particle Self-Consistent Engineering Study in the Compact Models of MOSFET Devices |
| 指導教授： |
張勝良
Sheng-Lyang Jang |
| 口試委員: |
徐敬文
Ching-Wen Hsue 黃進芳 Jhin-Fang Huang 莊敏宏 Miin-Horng Juang 黃恆盛 Heng-Sheng Huang 鄭明哲 Jeng, Ming-Jer 鄧恒發 Heng-Fa Teng |
| 學位類別： |
博士 Doctor |
| 系所名稱： |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
| 論文出版年： | 2013 |
| 畢業學年度： | 101 |
| 語文別： | 英文 |
| 論文頁數： | 105 |
| 中文關鍵詞： | 金氧半場效電晶體 、低溫 、先進量子 、單電子 、自我一致計算法 、半分析計算 、漢密爾頓週期演算法 、湯瑪斯-費米趨近理論 |
| 外文關鍵詞： | one particle, low field, self-consistency, semi-analysis, Hamiltonian-cycle algorithm, Thomas-Fermi approximation |
| 相關次數： | 點閱：145 下載：1 |
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思考到因半導體工業界在未來數十年的發展中，所可能帶來對電子設計工業界，即將到來之衝擊。因此考量在現有工業半導體的成熟製造技術能力下，此篇研究探索低溫低電場元件模型之新的工程量子理論，以便在未來能夠拓展出，可能存在新的電子設計領域。
在尚未進一步對金氧半場效電晶體做各種可能之低溫低電場量測之前。根據半古典理論發展之結果，推薦採用單電子自我一致計算法和運用半分析趨近理論，開展出新的量子工程模型和理論。如此以便能夠在未來，可為電子設計工業界開啟新的設計理論，新的技術,新的方法和新的應用，因而能夠創造出許多新的集成積體電路產品，而有助於開拓高科技市場。
本篇論文有以下數項的發展、發現、創新和創見，包括:(一)根據已經量測知道的低溫高電場漏電電流的現象，推薦使用新的量子工程模型和理論，於金氧半場效電晶體通道(或基板)中，在數值軟體計算低溫低電場漏電電流下，可達成類似地預期中類亂數電流現象的效果。(二)根據已經發現的但尚未解開之難題,設定新的量子工程趨近理論，計算得到部分問題徵兆的近似特性。(三)為達成電子設計工業界的要求，此篇研究提供可接受之快速和穩定的解決方案，並且符合以上的電氣特性模型結果。(四)在使用單電子自我一致計算法的情況下，採用半分析計算近似方式和修改過之湯瑪斯-費米趨近理論,發展出一套實體空間下新的趨近理論。(五)為了了解單電子自我一致計算法的機制，發展出數項新的技術。
根據過去數年來做此一研究課題的經驗發現，此一新的量子工程趨近理論，可能可以用於解釋已經量測到的，但是尚無法用已知的成熟理論解釋之特性。為未來推展出，可能填補部分在目前已經較成熟的古典理論和半古典理論之間之空白理論區域。
According to the trend of future semiconductor manufacturing, several impacts possibly will appear on the electronic design industry next several decades. Using the mature semiconductor technologies, this study, under low-field low-temperature or very-low-temperature conditions, explores the one-particle self-consistent calculation modeling devices to expand possibly new territory of electronic design in the future.
According to semi-classical approximations, before taking up any electrical measurements under low field low temperature or very-low-temperature conditions, we proposed a new engineering approximation. The new engineering approximation supports the one-particle self-consistent calculation, which is interpreted by semi-analytical approach, characterizing several low-field quantum features of conventional MOSFET devices. By taking the advantages of the mature semiconductor manufacturing capabilities, in the future, new quantum models used by the electronic design industry will offer new design theories, new techniques, new methodologies, and new electronic applications, which will bring in new integrated circuit products. These products will help expansion of high-tech markets.
The following items list the developments, discoveries, innovations, and inventions of this independent study: (1) According to the measured high-field leakage currents, we proposed the new engineering approximation theoretically predicting leakage current behaviors before measuring any low-field very-low-temperature currents over channels (or substrates) of MOSFET devices. The r-space one-particle self-consistent calculation using the proposed engineering approxima- tion does successfully perform similarly expected pseudo-random current phenomena under low-field very-low- temperature conditions. (2) Based on the discovered problems unsolved by the validated theories, we defined the new engineering approximation. The calculations based on the new approximation exhibited several similar quantum phenomena possibly leading to ways conquering the unsolved problems. (3) To satisfy the requirements of electronic design industry, the new electrical model performing the low-field very-low-temperature currents offers fast and stable solutions. (4) By using the semi-analytical approach and the modified Thomas-Fermi approximation, the r-space one-particle self-consistent calculation was led by the new engineering approximation. (5) To understand the mechanisms of the one-particle self-consistent calculation, we proposed several new techniques and skills.
During last several years, we experienced the new engineering approximation, which might interpret measured current phenomena even though the validated theories did not interpret them well. The proposed engineering approximation might also fill a part of theoretical gap between semi-classical approximations and classical theories in the future.
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