化學機械拋光(Chemical Mechanical Polishing, CMP)因具有快速移除材料且可達全面性平坦化之需求而成為近來半導體製程中最受矚目的平坦化技術，但隨著圖型尺寸逐漸微小化以及3D IC技術的快速發展，CMP技術在金屬薄膜平坦化方面當圖型尺寸進入32nm以下之發展已遭遇到表面刮傷、薄膜剝離及Dishing、Erosion等相關缺陷問題，因此透過外加能量的輔助使其仍能達到所要求之目標已成為平坦化技術發展之趨勢。本研究透過電場輔助於CMP製程中來探討外加能量對於平坦化技術之改善情形，經由鑲嵌形電極的設計來達到平坦化製程中銅材料氧化還原及研磨液循環之目的。本研究也探討研磨液各成分添加濃度對於電化學特性的影響，並搭配實驗拋光結果以材料移除率為優先考量進行研磨液改良。由實驗結果發現，鑲嵌形電極設計確實會造成研磨液循環產生，而研磨液改良前後並不會造成表面非均勻性提高，而材料移除率則可由20nm/min提升至63nm/min。同時，由實驗結果也發現電場輔助對於材料移除率將可造成30%的提升情形。透過系統中摩擦力量感測裝置的檢測可確認摩擦力於製程中區分為預壓區、拋光區、拋光-終點轉換區及終點區。本研究相關成果可作為研磨液和平坦化製程改進評估，以及日後3D IC CMP所需技術發展之參考。

Chemical mechanical planarization/polishing (CMP) has become an attractive technology in IC manufacturing process because it can achieve the requirement of high material removal rate (MRR) and global planarization. As the feature size decreases and the rapid development of 3D IC technique, the demands of maintaining high MRR and excellent surface quality in CMP has become a severe challenge. In the metal film CMP aspect, applying high pressure and rotational speed have caused many defects when the feature size moves to 32nm and beyond. Since the low down pressure and rotational speed can not fufill the MRR performance, hybrid energy CMP process has become a tentative technique to solve such problems. This study is to establish an electrical assisted chemical mechanical planarization (EACMP) system by using damascene electrodes that can achieve copper material redox reaction and also assist in slurry circulation. This study also discusses the electrochemical characteristics of slurry and then the modified slurry has been developed by electrochemical property inspection. Moreover, EACMP experiment has been used to investigate the endpoint of the polishing process and the performance of conventional CMP and EACMP. Experimental results show that the wafer surface non-uniformity is maintained and MRR can increase from 20nm/min to 63nm/min when using the developed slurry. The EACMP process can achieve 30% MRR increasing than the conventioned CMP process. From the endpoint detection results, the pre-loading region, polishing region, transient region and endpoint can be found to control the EACMP process. Results can be further applied for slurry analysis and process optimization, especially for the near future of requirement in the 3D IC fabrication process.

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