整合24GHz壓控振盪器與8GHz注入鎖定除頻器之設計｜國立臺灣科技大學博碩士論文系統

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研究生：	張珈瑋 Chia-wei Chang
論文名稱：	整合24GHz壓控振盪器與8GHz注入鎖定除頻器之設計 Design of Integrated 24GHz Voltage Controlled Oscillator and 8GHz Injection Locked Frequency Divider
指導教授：	黃進芳 Jhin-Fang Huang 張勝良 Sheng-Lyang Jang
口試委員:	徐敬文 C.W. Hsue 陳凰美 Hwan-Mei Chen 陳國龍 none
學位類別：	碩士 Master
系所名稱：	電資學院 - 電子工程系 Department of Electronic and Computer Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	111
中文關鍵詞：	電壓控制振盪器、注入鎖定除頻器、3D電感
外文關鍵詞：	VCO, ILFD, 3D Inductor
相關次數：	點閱：380 下載：7
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壓控振盪器與除頻器是頻率合成器電路中，主要的電路之一。對壓控振盪器而言，低相位雜訊可避免相鄰雜訊訊號經由混波轉換的干擾。而振盪器的輸出則經由除頻器來達成降頻的工作，因此，除頻器需具有高頻操作、寬的操作頻寬及低功率消耗。
本論文將描述如何設計金氧半壓控振盪器與直接注入鎖定除頻器，第一部分我們提出了一個寬鎖頻範圍的3D電感直接注入除3電路，此電路使用台積電所提供之零點一八微米互補式金氧半製程所製造，此除頻器使用一組nMOS交錯耦合的LC振盪器加上兩個串聯注入的MOSFETs，其中LC共振器電感為自製的3D電感，達到了減小面積及增加鎖頻範圍之功效。
第二部分我們提出了一個整合壓控振盪器與除頻器的電路，除頻器為一個使用並聯式注入的8GHz直接注入鎖定除三電路，再搭配一個24GHz的壓控振盪器整合於同一晶片，此電路使用台積電所提供之零點一八微米互補式金氧半製程所製造，除頻器可以鎖定除頻壓控振盪器的輸出訊號，並且鎖定除頻後比未鎖定除頻前有更低的相位雜訊。

The key building blocks in the frequency synthesizer are the voltage controlled oscillator (VCO) and the high frequency divider circuit. Most importantly, low phase-noise is required to avoid corrupting the mixer-converted signal by close interfering tones for VCO circuit. The output of the VCO is divided down by the frequency divider which requires operating at high frequencies, wide operating range and lower power consumption.
This thesis studies the design of CMOS Voltage-Controlled Oscillator and injection-locked frequency divider. The first part proposes a wide-locking range divide-by-3 frequency divider employing 3D helical inductors fabricated in the 0.18-μm 1P6M CMOS technology. The divider consists of an nMOS cross-coupled LC oscillator and two injection MOSFETs in series with the cross-coupled NMOSFETs, and the LC resonator is composed of two 3D helical inductors and varactors. The aim of using 3D inductor is to reduce chip size.
The second part of this thesis proposes an integrated VCO-divider circuit, the divide-by-3 injection locked frequency divider consists of a 8GHz nMOS-core VCO with two parallel injection MOSFETs and the VCO is a 24GHz double cross-coupled np-core CMOS VCO. The circuit is implemented in a standard 0.18-μm CMOS process. The ILFD can lock to the VCO and outputs a lower phase noise source than the free running ILFD.

Contents
中文摘要	1
ABSTRACT	3
誌謝	4
CONTENTS	5
LIST OF FIGURES	7
LIST OF TABLES	10
CHAPTER 1  INTRODUCTION	11
1.1  BACKGROUND	11
1.2  THESIS ORGANIZATION	14
CHAPTER 2  OVERVIEWS OF VOLTAGE-CONTROLLED OSCILLATORS                          AND INJECTION-LOCKED FREQUENCY DIVIDER	15
2.1  THE OSCILLATOR	15
2.1.1  Negative Resistance (NR)	15
2.1.2  Positive Feedback (PFB)	18
2.2  ALL TYPES OF OSCILLATORS	20
2.2.1  Ring Oscillator	21
2.2.2  LC-Tank Oscillator	24
2.3  VOLTAGE-CONTROLLED OSCILLATOR	28
2.4  THE PARAMETERS OF VCOS	29
2.4.1  Center Frequency	29
2.4.2  Tuning Range	29
2.4.3  Tuning Linearity	30
2.4.4  Output Amplitude	31
2.4.5  Power Dissipation	31
2.4.6  Supply and Common-Mode Rejection	32
2.4.7  Output Signal Purity	32
2.5  PHASE NOISE	32
2.5.1  Definition of Phase Noise	33
2.5.2  Existing Models of Phase Noise	35
2.5.2.1  Time-invariant phase noise model	35
2.5.3  Noise Sources	37
2.5.4  Phase Noise in Wireless Communication	42
2.5.5  Previous Models of Phase Noise	44
2.6  ON-CHIP INDUCTOR RESEARCH	46
2.7  VARACTOR	56
2.7.1  P-N Junction Varactor	56
2.7.2  MOS Varactor	57
2.8  RESISTORS	63
2.9  INJECTION LOCKING	64
CHAPTER 3  DIVIDE-BY-3 LC INJECTION LOCKED FREQUENCY DIVIDER IMPLEMENTED WITH 3D INDUCTORS	70
3-1.  INTRODUCTION	70
3-2.  CIRCUIT DESIGN	72
3-3.  MEASUREMENT RESULTS	82
3-4.  CONCLUSION	91
CHAPTER 4  INTEGRATED 24GHZ LC VCO AND 8GHZ DIVIDE-BY-3 FREQUENCY DIVIDER	92
4-1.  INTRODUCTION	92
4-2.  DESIGN OF VCO AND ILFD CIRCUITS	94
4-3.  MEASUREMENT RESULTS	100
4-4.  CONCLUSION	105
CHAPTER 5  CONCLUSION	106
REFERENCES	108

                                

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