隨著5G世代快速的發展和對於節能的重視，許多的事物逐漸邁向自動化，使得功率積體電路的應用逐漸廣泛。功率金氧半場效電晶體具有元件尺寸小、低導通電阻值、高切換速度以及可承受大電壓及大電流等優點。
現在市面上多是採用垂直結構，傳統的垂直結構是採用磊晶片且接觸孔位於下方，這樣的結構是最佳的，但是，此結構與CMOS整合在一起會有困難。
為了整合問題，一般採用橫向結構，但是橫向結構的特性比較差且元件密度不高，所以此研究使用塊體矽基板來形成垂直式功率金氧半場效電晶體，以解決垂直結構與CMOS整合問題以及橫向結構特性不佳的問題。
此研究使用Sentaurus TCAD元件模擬軟體進行模擬分析，模擬結果顯示在相同的崩潰電壓下，垂直式功率金氧半場效電晶體的單位胞元電阻比傳統溝槽式功率金氧半場效電晶體低1.26倍。在相同的摻雜濃度和汲極偏壓下，垂直式功率金氧半場效電晶體的電場分布比傳統溝槽式功率金氧半場效電晶體低。
此研究也探討不同尺寸對垂直式功率金氧半場效電晶體特性的影響，發現漂移區長度為2.0 μm，主動區寬度為1.4 μm時擁有最低的單位胞元電阻，為最佳的元件尺寸。

With the development of the 5G generation rapidly and the emphasis on energy saving, many things are gradually moving towards automation, making the application of power integrated circuits gradually wider. Power MOSFET has a small device size, low on resistance, high switching speed, and the capability to sustain high breakdown voltage and high operating current [1]. Nowadays, the modern fabrication process basically uses a vertical structure. The conventional trench power MOSFET is uses an epi-wafer, and it’s the bottom drain contact. This structure is the best, but it is difficult to integrate with the CMOS.
In order to resolve the integration problem, the lateral power MOSFET is used instead. However, the lateral power MOSFET shows poor characteristics and low device density. Therefore, this study employs bulk silicon substrate to form the vertical power MOSFET, for CMOS integration and device performance. The Sentaurus TCAD simulation and device analysis are carried out [2]. The simulation results show that the unit cell specific on resistance of the vertical power MOSFET is 1.26 times lower than the conventional trench power MOSFET at the same breakdown voltage. This is because in the same drift region doping concentration and the drain bias voltage, the vertical power MOSFET can result in smaller electric field than the conventional trench power MOSFET.
The effects of different sizes on the characteristics of vertical power MOSFET are also studied. It is found that the device, with the drift region length of 2.0 μm and the active region width of 1.4 μm, would show optimal unit cell specific on resistance.

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