研究生: |
Nguyen Thi Quynh Hoa Nguyen Thi Quynh Hoa |
---|---|
論文名稱: |
錫摻雜MA2FASb2I9/奈米纖維素晶體可撓無基板無鉛複合鈣鈦礦光感測器 Flexible, Substrate-free, and Lead-free Perovskite Photodetector Based on Sn-doped MA2FASb2I9﹁/﹁Cellulose Nanocrystals Composite |
指導教授: |
蔡孟霖
Meng-Lin Tsai |
口試委員: |
蔡東昇
Dung-Sheng Tsai 楊伯康 Po-Kang Yang |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 材料科學與工程系 Department of Materials Science and Engineering |
論文出版年: | 2024 |
畢業學年度: | 112 |
語文別: | 英文 |
論文頁數: | 50 |
外文關鍵詞: | lead-free, photodetectors, perovskites, substrate-free, flexible |
相關次數: | 點閱:99 下載:0 |
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Photodetectors are widely used in various fields of applications such as optical communication, imaging, and biomedical sensing due to their ability to convert light signals to electrical signals. Although various perovskite materials have been studied for to exhibit photodetection behavior, their potential in commercial applications is dramatically restricted owing to the toxic lead element. Recently, lead-free perovskites have attracted scientists due to optoelectronic properties comparable with lead-based materials, including tunable bandgaps, long diffusion, and high carrier mobility. However, these perovskites are usually not stable under ambient condition, which seriously degrades the device performance. In this thesis, an organic-inorganic lead-free-based halide perovskite photodetector is studied to improve the material stability and device photoresponse. Sn-doped MA2FASb2I9 thin film is optimized by finding an ideal ratio of MAI:FAI:SbI3:SnI2. The precursor solution is mixed with cellulose nanocrystals (CNCs) solution to synthesize a paper-like light absorbing film by the vacuum filtration method. Finally, the photodetector device is fabricated by depositing interdigitated Ti/Au (5 nm/95 nm) electrodes on the film to form a stable and flexible photodetector. The flexible device based on Sn-doped MA2FASb2I9/CNCs thin film exhibits a noticeable photoresponse with a responsivity of 0.85 × 10−3 AW-1, response time of ~60 ms, and good air stability under 650 nm laser irradiation at a bias of 3 V. The photodetector device demonstrated herein holds the potential for the future development of lead-free, stable, and flexible optoelectronic applications.
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