本論文是利用表面光電壓光譜 (surface photovoltage spectroscopy, SPS) 、光激發螢光光譜 (photoluminescence, PL) 、無接點電場調制反射 (contactless electroreflectance, CER) 以及光子調制反射 (photoreflectance, PR) 量測技術研究II-VI族寬能隙合金化合物半導體材料特性，其中包括利用高壓布里奇曼法 (high pressure Bridgman method) 成長而成的，三元 (CdBeSe, CgMgSe, ZnBeSe, ZnMgSe) 和四元 (ZnBeMgSe) II-VI族化合物半導體之單晶以及利用分子束磊晶法 (Molecular beam epitaxy, MBE) 成長而成的，不同鈹 (berylium, Be)含量的CdBeSe成長於InP基板上等薄膜樣品。
在室溫下，利用SPS量測技術，量測以高壓布里奇曼法成長而成的化合物半導體之單晶的SPS調制光譜，其可觀察到當樣品未經處理時，則會量測到樣品上缺陷相關 (defect-related) 之訊號，而無法量測到真正的能隙躍遷訊號；但當經過約三小時的機械磨光 (mechanical polished) 以及化學蝕刻 (chemical etched) 後，即可去除掉缺陷相關之訊號，而得到真實地能隙躍遷訊號。故我們可以利用在室溫下的SPS調制光譜量測技術，來檢查樣品的表面是否有處理完善。此篇論文中所有的化合物半導體單晶樣品，在做光學量測之前，皆有經過機械磨光以及化學蝕刻的處理。
針對本論文中所探討，含鈹、鎂II-VI族寬能隙半導體之單晶與薄膜樣品，做溫度變化之PL、CER 以及PR光譜的量測，其量測之結果作勞倫茲線形 (Lorentzian lineshape) 的吻合與分析。其單晶之樣品，由PL於低溫 (15K)下之譜線中，可觀察到三個躍遷訊號，由高能量處往低能量處依次為能帶邊際激子譜線 (band-edge exciton line, X) 躍遷訊號、施體-受體對 (donor-acceptor pairs, DAP) 躍遷訊號及深層能階 (deep level, DL) 躍遷訊號。而CER 及PR光譜量測結果中，可決定其訊號來源分別為能隙附近之帶間躍遷 (band-edge transition) 以及自旋軌域分裂 (spin-orbital splitting) ，並且利用此些結果探討溫度對訊號躍遷之影響。此外，由展寬參數 (broadening parameters)中可討論單晶與薄膜之樣品其GLO和一些II-VI族半導體的比較。
此外，我們利用室溫下CER量測的技術，來探討分子束磊晶法成長而成的，CdSe/ZnBeSe與CdSe/ZnSe 成長於GaAs (001) 基板上的兩量子點結構之樣品。從量測的譜線中，我們可以觀察到於CdSe/ZnBeSe樣品中，硒化鎘 (CdSe)量子點的能量躍遷訊號比CdSe/ZnSe來得高 (blue shift, 藍移)，且其線形也比較窄 (narrower)。此量子點能量躍遷訊號之所以會藍移，是由於加入鈹後，量子點的結構變小和其有較大的障壁能量 (barrier energy) ，再者由較小的展寬參數可顯示出在ZnBeSe樣品下的量子點分佈比較均勻。

In this thesis, the optical properties of Be/Mg contained II-VI wide band gap alloys semiconductor materials of ternary (CdBeSe, CdMgSe, ZnBeSe, and ZnMgSe) and quaternary (ZnBeMgSe) mixed crystals grown from the melt by the high pressure Bridgman method, and CdBeSe epilayers grown on InP substrates by molecular beam epitaxy (MBE) are studied using the techniques of surface photovoltage spectroscopy (SPS), photoluminescence (PL), contactless electroreflectance (CER) and photoreflectance (PR).
Room-temperature SPS has been used as a diagnostic technique for checking the surface condition of the bulk material samples. For mechanically polished samples, the surface photovoltage spectrum at room temperature recorded a below band edge broad feature which is most likely related to the surface states induced by mechanical defect. This feature can be eliminated via mechanical polishing and followed by chemical etching, and hence only exciton line was observed for the damage-removed sample.
Typical PL spectrum at low temperature consists of an exciton line, an edge emission feature due to recombination of donor-acceptor pairs, and a broad band related to recombination through deep level defects. Interband transitions, originating from the band edge, including crystal-field splitting (wurtzite-type sample) and spin-orbital splitting critical points of the sample, have been observed in the CER/PR spectra. The near band-edge interband excitonic transition energies of mixed crystal and thin films samples are determined via lineshape fits to the CER and PR spectra. The peak positions of the excitonic emission lines in the PL spectra correspond quite well to the energies of the fundamental transitions determined from electromodulation data. The parameters that describe the temperature dependence of the interband transition energy and broadening parameters of the excitonic features, and the broadening function of the band edge exciton are evaluated and discussed.
In addition, CER has been used to investigate the capped CdSe quantum-dot (QD) structures grown on ZnSe and ZnBeSe by MBE on GaAs (001) substrates at room temperature. The features originating from the QDs transitions for the CdSe QDs sandwiched by ZnBeSe show blue shifts and narrower lineshape as compared to those grown on ZnSe. The blue shifts of the QD transitions are related to the smaller QD size and the slightly higher barrier energy due to the presence of Be, while the smaller broadening parameters indicate the higher uniformity of the QD size distribution of the ZnBeSe sample.

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