研究生: |
陳冠諭 Guan-Yu Chen |
---|---|
論文名稱: |
選擇性電泳沉積之反應式輔助複線式鑽石線鋸於單晶矽晶圓加工研究 Study on Multi-Wire Diamond Wire Sawing Process with Selective Reactive Electrophoretic Deposition for Monocrystalline Silicon Wafers |
指導教授: |
陳炤彰
Chao-Chang Chen |
口試委員: |
趙崇禮
Choung-Lii Chao 陳順同 Shun-Tong Chen 蔡曜陽 Yao-Yang Tsai 陳士勛 Shih-Hsun Chen 陳炤彰 Chao-Chang Chen |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 機械工程系 Department of Mechanical Engineering |
論文出版年: | 2021 |
畢業學年度: | 109 |
語文別: | 中文 |
論文頁數: | 220 |
中文關鍵詞: | 鑽石線鋸製程 、選擇性電泳沉積 、固相化學反應 、單晶矽晶圓 、次表層破壞 |
外文關鍵詞: | Diamond Wire Sawing, Selective Electrophoretic Deposition, Solid-Phase Chemical Reaction, Mono-Si Wafers, Sub-Surface Damage |
相關次數: | 點閱:226 下載:0 |
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單晶矽晶圓為半導體的重要元件,近年來,電子產品被大量使用而導致矽晶圓供不應求,而如何有效率增加矽晶圓的產量是一直以來關切的議題。本研究將延續先前電泳反應式鑽石線鋸製程,並研發一款選擇性電泳沉積(Selective Electrophoretic Deposition, SEPD )漿料,本研究目的為改善矽晶圓表面品質及幾何形狀。利用碳酸鈣(CaCO3)與矽(Si)切屑之不同等電點(Isoelectric point)的特性,進行SEPD漿料之製備,透過靜態電泳沉積實驗與能量散射光譜儀驗證選擇性電泳沉積之效果。本研究將選擇性電泳沉積機制套用鑽石線鋸製程上,能使得鑽石線只吸附碳酸鈣反應磨料,避免吸附矽或含矽的反應物切屑,以減少切屑對晶圓表面的刮削。本研究先用單線式線鋸切割機進行切割實驗,由實驗結果顯示,利用選擇性反應式電泳沉積鑽石線鋸(Selective Electrophoretic Deposition Diamond Wire Sawing, SEPD-DWS)加工可有效改善矽晶圓表面粗糙度8.4%和降低次表層破壞深度7.2%,再利用拉曼光譜儀及接觸角等驗證固相化學反應(Solid Phase Chemical Reaction, SPCR)機制。後續將SEPD-DWS導入複線式線鋸切割機進行實驗,實驗結果可得,材料移除率增加約9.4%,更大幅改善翹曲量(Warp)約89%,以及減少次表層破壞深度約10.9%。
Monocrystalline silicon (Mono-Si) wafers are important components of semiconductors. In recent years, the use of electronic products has led to a short supply of silicon wafers. How to efficiently increase the production of silicon wafers is an issue of concern. This study continues the previous reactive Electrophoretic Deposition (EPD) Diamond Wire Sawing (DWS) process and develops a Selective Electrophoretic Deposition (SEPD) slurry. This study aims to improve the surface quality and geometric shape of silicon wafers. The preparation of SEPD slurry is carried out by the characteristics of different isoelectric points of calcium carbonate (CaCO3) and slicing silicon chips, and the effect of SEPD is verified by static EPD experiments and Energy Dispersion Spectrometers (EDS). In this study, applying SEPD mechanisms to diamond wire sawing processes allows the diamond wire to absorb only reaction abrasives of CaCO3 and avoid adsorbing slicing Si chips or silicon-containing reactant chips to reduce chip scraping on the wafer surface. In this study, a single-wire sawing is used for slicing experiment, and the experimental results show that Selective Electrophoretic Deposition Diamond Wire Sawing (SEPD-DWS) process can effectively improve the surface roughness of wafers by 8.4% and Sub-Surface Damage (SSD) depth by 7.2%. The Solid Phase Chemical Reaction (SPCR) can be verified by Raman spectrometer, Contact angle and so on. The SEPD-DWS is adapted to a multi-wire sawing machine for 3-inch monocrystalline ingot, for experiments of results, the material removal rate (MRR) with SEPD is increased by 9.4%, the warp of wafer is obviously improved by 89%, and the sub-surface damage depth is decreased by 10.9%.
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