本研究利用有機金屬化學氣相沉積(MOCVD)系統，將氮源由傳統MOCVD製程中所使用的氨氣(NH3)改為第三丁基聯胺(tertiarybutylhydrazine, TBHy)，來與三甲基銦(trimethyl indium,TMIn)成長氮化銦薄膜。探討不同的V/III原料供給比與反應溫度對成長氮化銦薄膜的影響。
結果發現在反應溫度為600 oC、TBHy/TMIn原料供給比為28.5的反應條件下長膜為沿著C面的(002)方向成長，其光激發螢光光譜(PL)測量結果發現峰值出現在1613 nm，對應到0.77 eV的能隙，顯示的確成功製作出氮化銦薄膜
使用第三丁基聯胺為氮源與三甲基鎵跟三甲基銦來成長三元氮化銦鎵薄膜的研究發現在TMIn/TMIn+TMGa 原料供給比為0.30，反應溫度為650oC成長150分鐘後的膜層，藉由X光射線繞射圖譜可得2θ為33.07o，計算出銦含量為42.34%。

Indium Nitride (InN) thin film have been synthesized successfully by metalorganic chemical vapor deposition (MOCVD) technique using trimethylindium (TMIn) and butylhyrazine (TBHy) as the reactants for the first time.
In contrast to the necessity of over several ten thousand V/III precursor feeding ratio using NH3 as the nitrogen source, we found that InN thin films along (002) plane can be successfully grown at 600℃using quite a low V/III precursor feeding ratio of 28.5 when applying TBHy as the nitrogen source. The photo-luminance measurement revealed an evident signal at 1613 nm (corresponding to 0.77 eV), strongly suggesting that InN was successfully synthesized. Moreover, InGaN films with indium content as high as 42% were also obtained, as calculated by the shift of X-ray diffraction peak observed at 2=33.07。.

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