本研究運用準分子雷射退火矽膜再結晶特性之線上光學雙檢測雷射系統即時檢測出非晶矽薄膜於準分子雷射退火期間反射率與穿透率之變異性，進而分析相關物理現象和量測矽膜融化時間；此外本研究亦改變矽膜厚度和基板預熱溫度，以分析不同參數對於矽膜再結晶特性之影響性。研究結果發現，矽膜融化時間會隨著準分子雷射能量密度、矽膜厚度、預熱溫度的增加而增長，同時晶粒尺寸亦隨之而變大可達2 μm。由兩種厚度的晶粒尺寸比較，晶粒尺寸相同而矽膜融化時間卻不同，因為不同矽膜厚度會有不同的再結晶機制，由此得知可由線上光學檢測系統得以預知矽膜融化時間，但晶粒尺寸判斷須將矽膜厚度與矽膜融化時間搭配。線上光學檢測系統能夠理解準分子雷射矽膜之再結晶機制和量測矽膜融化時間，因此可以容易製作大粒徑之多晶矽以及提高低溫多晶矽之製程良率。

An in-situ real-time time-resolved optical reflectivity and transmissi vity (TRORT) monitoring system combining two CW He-Ne laser, a fast digital oscilloscope and three photodiodes is developed for monitoring the melt-phase duration and examine the melting and crystallization behavior during XeF excimer laser annealing(ELA) in this study.
Using different thickness of a-Si films and preheat temperature during XeF excimer laser annealing. The melt-phase duration to be extend, while thickness of a-Si films, preheat temperature and laser annealing fluence be increased. At the same time the grain size will increase to 2 μm. The grain size measurement of two kinds of thickness is compared, the grain size is the same and the silicon is different in melt-phase duration. Because different thickness of a-Si films will have different crystallization mechanisms. The grain size is judged must match in melt-phase duration and thickness of a-Si films.
Using two probe lasers TRORT system can examine the melting and crystallization behavior, and measure the melt-phase duration. This technique provides a simple approach for fabrication large-grained poly-Si during ELA and enhances the high yield during in-line large area flat panel displays fabrication using poly-Si TFTs.

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