本論文係以射頻電漿輔助化學氣相沉積法，來探討單晶矽異質接合的最佳化程序，包含將本質層非晶矽沉積於n型單晶矽基材，以及沉積p型與n型非晶矽摻雜層。所使用的摻雜源為毒性稀釋之三甲基硼及三丁基磷。
本實驗呈現矽晶片於異質接合後的暗示開路電壓(implied Voc)與有效載子生命周期(effective lifetime)，作為矽晶異質接合良好與否的指標。以矽甲烷並添加氫氣來製備本質非晶矽，作為鈍化之用。
首先改變本質非晶矽的氫氣稀釋比([H2]/[SiH4])；成長膜層厚度為15奈米時，沉積的本質非晶矽層具有較佳的矽晶界面鈍化效果。本實驗製作的矽晶異質接合可得到晶片有效載子生命周期到達350 μs，暗示開路電壓為655 mV。

In this thies, the intrinsic amorphous silicon (a-Si:H) were deposited on n-type monocrystalline silicon by RF PECVD, including p type amorphous silicon and n type amorphous silicon, we discuss optimization procedure of silicon heterojunction(SHJ). The TMB and TBP were used as the doping gases.
We present implied open circuit voltage and effective lifetime in silicon heterojunction as the indicators. The thin intrinsic a-Si:H were prepared by SiH4 and H2 under different dilution ratio. It is found that a better interface passivation of SHJ was obtained by 15 nm thickness intrinsic a-Si:H. In this experiment, the implied open circuit voltage of Silicon heterojunction is 655 mV, effective lifetime is 350 μs.

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