[1] A. A. Ebnalwaled, and R. H. Al-Orainy, “Anisotropic properties and conduction mechanism of TlInSe2 chain semiconductor,” Appl. Phys. A, vol. 112, no. 4, pp. 955-961, 2012.
[2] A. A. Attia, M. A. M. Seyam, and S. S. Nemr, “AC conductivity and dielectric relaxation properties of bulk TlInSe2 prepared from single crystal,” J. Mater. Sci. Mater. Electron., vol. 29, no. 9, pp. 7325-7332, 2018.
[3] A. F. Qasrawi, and N. M. Gasanly, “Transient and steady state photoelectronic analysis in TlInSe2 crystals,” Mater. Res. Bull, vol. 46, no. 8, pp. 1227-1230, 2011.
[4] B. Gürbulak, M. Şata, S. Dogan, S. Duman, A. Ashkhasi, and E. F. Keskenler, “Structural characterizations and optical properties of InSe and InSe:Ag semiconductors grown by Bridgman/Stockbarger technique,” Physica E Low Dimens. Syst. Nanostruct., vol. 64, pp. 106-111, 2014.
[5] C.-H. Ho, “Growth and characterization of near-band-edge transitions in β-In2S3 single crystals,”J. Cryst. Growth, vol. 312, no. 19, pp. 2718-2723, 2010.
[6] C.-H. Ho, and Y.-C. Chen, “Thickness-tunable band gap modulation in γ-In2Se3,” RSC Adv., vol. 3, no. 47, 2013.
[7] C.-H. Ho, T.-Y. Hsu, and L. C. Muhimmah, “The band-edge excitons observed in few-layer NiPS3,” npj 2D Mater. Appl., vol. 5, no. 1 pp. 1-10, 2021.
[8] C. H. Ho, M. C. Chiou, and T. M. Herninda, “Nanowire grid polarization and polarized excitonic emission observed in multilayer GaTe,” J Phys Chem Lett, vol. 11, no. 3, pp. 608-617, 2020.
[9] C. H. Ho, H. W. Lee, and C. C. Wu, “Polarization sensitive behaviour of the band-edge transitions in ReS2 and ReSe2 layered semiconductors,” J. Condens. Matter Phys., vol. 16, no. 32, pp. 5937-5944, 2004.
[10] C.-H. Ho, H.-W. Lee, and Z.-H. Cheng, “Practical thermoreflectance design for optical characterization of layer semiconductors,” Rev. Sci. Instrum., vol. 75, no. 4, pp. 1098-1102, 2004.
[11] D. A. Bandurin, A. V. Tyurnina, G. L. Yu, A. Mishchenko, V. Zolyomi, S. V. Morozov, R. K. Kumar, R. V. Gorbachev, Z. R. Kudrynskyi, S. Pezzini, Z. D. Kovalyuk, U. Zeitler, K. S. Novoselov, A. Patane, L. Eaves, I. V. Grigorieva, V. I. Fal'ko, A. K. Geim, and Y. Cao, “High electron mobility, quantum hall effect and anomalous optical response in atomically thin InSe,” Nat. Nanotechnol., vol. 12, no. 3, pp. 223-227, 2017.
[12] D. G. Kilday, D. W. Niles, G. Margaritondo, and F. Levy, “Electronic structure of the "chain" chalcogenide TlInSe2,” Phys Rev B Condens Matter, vol. 35, no. 2, pp. 660-663, 1987.
[13] E. Doni, R. Girlanda, V. Grasso, A. Balzarotti, and M. Piacentini, “Electronic properties of the III–VI layer compounds GaS, GaSe and InSe. I: Band structure,” Il Nuovo Cimento B Series 11, vol. 51, no. 1, pp. 154-180, 2007.
[14] E. M. Gojaev, E. A. Allakhyarov, A. M. Nazarov, K. D. Gyul’mamedov, K. S. Khalilova, and E. M. Mamedov, “Acoustophotovoltaic effect in TlInSe2, TlInTe2, and TlGaTe2 single crystals,” Inorg. Mater., vol. 43, no. 10, pp. 1059-1064, 2007.
[15] E. M. Godzhaev, S. R. Dzhafarova, K. D. Gyul’mamedov, E. M. Mamedov, and S. S. Osmanova, “Synthesis and growth of TlInSe2 and TlGaSe2 single crystals,” Inorg. Mater., vol. 45, no. 7, pp. 728-730, 2009.
[16] F. H. Pollak, and H. Shen, ‟Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices”, Mater. Sci. Eng. R Rep.,10, 275-374. ,1993
[17] G. Orudzhev, N. Mamedov, H. Uchiki, N. Yamamoto, S. Iida, H. Toyota, E. Gojaev, and F. Hashimzade, “Band structure and optical functions of ternary chain TlInSe2,” J. Phys. Chem. Solids, vol. 64, no. 9-10, pp. 1703-1706, 2003.
[18] G. Micocci, A. Tepore, R. Rella, and P. Siciliano, “Investigation of deep levels in Zn‐doped InSe single crystals,” J. Appl. Phys., vol. 71, no. 5, pp. 2274-2279, 1992.
[19] G. E. Davydyuk, O. Y. Khyzhun, A. H. Reshak, H. Kamarudin, G. L. Myronchuk, S. P. Danylchuk, A. O. Fedorchuk, L. V. Piskach, M. Y. Mozolyuk, and O. V. Parasyuk, “Photoelectrical properties and the electronic structure of Tl(1-x)In(1-x)Sn(x)Se2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys,” Chem Phys, vol. 15, no. 18, pp. 6965-72, 2013.
[20] H. Mathieu, J. Allegre, and B. Gil, “Piezomodulation spectroscopy: A powerful investigation tool of heterostructures,” Phys Rev B Condens Matter, vol. 43, no. 3, pp. 2218-2227, 1991.
[21] 林旻翰, “II-Ⅳ族與Ⅲ-Ⅳ族寬能隙半導體硫屬化合物半導體之單晶成長與特性研究,” 國立台灣科技大學博士論文, 2018.
[22] H. Ertap, and M. Karabulut, “Structural and electrical properties of boron doped InSe single crystals,” Mater. Res. Express, vol. 6, no. 3, 2018.
[23] J. Grigas, E. Talik, and V. Lazauskas, “XPS of incommensurate and electronic structure of thallium chalcogenides,”J. Phys. Conf. Ser., vol. 93, 2007.
[24] K. Allakhverdiev, S. Ellialtioglu, A. Ismailov, and Z. Ibragimov, “Raman scattering and Hall effect in layer InSe under pressure,” High Press Res, vol. 13, no. 1-3, pp. 121-125, 2006.
[25] K. Mimura, T. Nogami, K. Abe, K. Wakita, M. Arita, N. Mamedov, G. Orudzhev, H. Namatame, M. Taniguchi, Y. Taguchi, and K. Ichikawa, “Temperature-dependent angle-resolved photoemission spectra of TlInSe2: manifestations of incommensurate and commensurate phases,” Jpn. J. Appl. Phys., vol. 47, no. 10, pp. 8188-8192, 2008.
[26] K. Wakita, Y. Araki, R. Asaba, Y. Shim, and N. Mamedov, “Photoluminescence spectra of TlInSe2,” Phys. Status Solidi C, vol. 9, no. 12, pp. 2352-2354, 2012.
[27] L. Jatautė, V. Krylova, N. Dukštienė, M. Lelis, and S. Tučkutė, “Ag-In-Se films on flexible architectural textiles as efficient material for optoelectronics applications: a preliminary study,” Thin Solid Films, vol. 721, 2021.
[28] M. Ishikawa, T. Nakayama, K. Wakita, Y. G. Shim, and N. Mamedov, “First-principles study of giant thermoelectric power in incommensurate TlInSe2,” J. Appl. Phys, vol. 123, no. 16, 2018.
[29] M. M. El-Nahass, M. M. Sallam, and A. H. S. Abd Al-Wahab, “Optical and photoelectric properties of TlInS2 layered single crystals,” Curr. Appl. Phys, vol. 9, no. 2, pp. 311-316, 2009.
[30] M. Kulakci, T. Colakoglu, B. Ozdemir, M. Parlak, H. E. Unalan, and R. Turan, “Silicon nanowire-silver indium selenide heterojunction photodiodes,” Nanotechnology, vol. 24, no. 37, pp. 375203, 2013
[31] M. Piasecki, G. L. Myronchuk, O. V. Zamurueva, O. Y. Khyzhun, O. V. Parasyuk, A. O. Fedorchuk, A. Albassam, A. M. El-Naggar, and I. V. Kityk, “Huge operation by energy gap of novel narrow band gap Tl1−xIn1−xBxSe2(B = Si, Ge): DFT, x-ray emission and photoconductivity studies,” Mater. Res. Express, vol. 3, no. 2, 2016.
[32] N. M. Ravindra, and V. K. Srivastava, “Temperature dependence of the energy gap in semiconductors,” J. Phys. Chem. Solids, vol. 40, no. 10, pp. 791-793, 1979.
[33] N. Mamedov, K. Wakita, S. Akita, and Y. Nakayama, “1D-TlInSe2: Band structure, dielectric function and nanorods,” Jpn. J. Appl. Phys., vol. 44, no. 1, pp. 709-714, 2005.
[34] N. Mamedov, K. Wakita, A. Ashida, T. Matsui, and K. Morii, “Super thermoelectric power of one-dimensional TlInSe2,” Thin Solid Films, vol. 499, no. 1-2, pp. 275-278, 2006.
[35] N. Mamedov, K. Wakita, Y. Shim, K. Abe, and N. Ogushi, “Temperature-dependent and pump-probe ellipsometric studies of TlInSe2,” Thin Solid Films, vol. 517, no. 4, pp. 1434-1438, 2008.
[36] S. Ozaki, and S. Adachi, “Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2,” Int. J. Appl. Phys., vol. 100, no. 11, 2006.
[37] S. Hosokawa, J. R. Stellhorn, H. Ikemoto, K. Mimura, K. Wakita, and N. Mamedov, “Lattice distortions in TlInSe2 thermoelectric material studied by X-Ray absorption fine structure,” Phys. Status Solidi A, vol. 215, no. 1, 2018.
[38] T. Ikari, S. Shigetomi, and K. Hashimoto, ‟ Crystal structure and Raman spectra of InSe”, Phys. Status Solidi, vol.111, pp. 477-481, 1982.
[39] X. Li, X. Song, J. Du, W. Xiong, and C. Xia, “Strain-tunable p-type Ag doping in the native n-type InSe monolayer,” Appl. Surf. Sci. , vol. 462, pp. 387-392, 2018.
[40] X. Yan, X. Wu, Y. Fang, W. Sun, C. Yao, Y. Wang, X. Zhang, and Y. Song, “Effect of silver doping on ultrafast broadband nonlinear optical responses in polycrystalline Ag-doped InSe nanofilms at near-infrared,” RSC Adv., vol. 10, no. 5, pp. 2959-2966, 2020.
[41] Z. Yang, W. Jie, C. H. Mak, S. Lin, H. Lin, X. Yang, F. Yan, S. P. Lau, and J. Hao, “Wafer-scale synthesis of high-quality semiconducting two-dimensional layered InSe with broadband photo response,” ACS Nano, vol. 11, no. 4, pp. 4225-4236, 2017.
[42] 許樹恩、吳泰伯, ‟X光繞射原理與材料結構分析,” 中國材料科學學會, 1996.
[43] J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, “Handbook of X-ray Photoelectron Spectroscopy,” United States of America, 1992.
[44] 朱韻儒, “硒化铟系列半導體之晶體成長與特性研究,” 國立台灣科技大學碩士論文, 2015.
[45] S. Kumar, P. Kumar, A. Das and C. S. Pathak, “Surface-Enhanced Raman Scattering: Introduction and Applications,” London, 2020.
[46] 林文堯, “硫化錫與硒化錫之晶體成長與光學特性研究,” 國立台灣科技大學碩士論文, 2017.
[47] 賴相儒, “鉻摻雜二硒化鉬與三硒化二鉻之單晶成長與特性研究,” 國立台灣科技大學碩士論文, 2018.