本論文研究應用於光通訊系統之積體電路元件，包含矽鍺發光晶片、矽鍺檢光晶片、可調式轉阻放大器與自動增益控制放大器，分別採用台積電(TSMC)之0.35μm SiGe 3P3M製程及0.18μm CMOS 1P6M製程來設計。
第一部份探討兩個主題，第一為矽鍺基發光晶片，我們利用電晶體之PN接面，與台積電0.35μm SiGe 3P3M製程中所提供的四種型號電晶體，以及修改接腳金屬線的寬度和兩種佈局方式來研究矽鍺發光晶片的發光特性。以型號lw062和一般型佈局方式有最佳的發光特性，以波長1150nm有最大光功率。第二為矽鍺基檢光晶片的設計，利用光電晶體的電流增益特性，來放大檢光電流，在紅光、藍光、綠光為光源下，以紅光接收效果最好。
第二部份為可調式增益轉阻放大器之設計與實現，使用台積電0.35μm SiGe 3P3M製程來實現電路，增益可調範圍41.52~55.1 dBΩ，在光檢測器之寄生電容250fF下操作時的-3dB頻寬為3.24~2.11 GHz，功率消耗在供應電壓3.3V下為29.99mW。
第三部份為光接收前端電路之模擬，使用台積電0.18μm CMOS 1P6M製程來設計電路。電路架構包含差動式輸出轉阻放大器以及自動增益控制放大器，模擬結果得到增益調整範圍63.9 ∼91.57 dBΩ，-3dB頻寬在光檢測器之寄生電容250fF下為1.75GHz，電路總功率消耗在供應電壓1.8V下為84.54mW。

In this thesis, a study is made of the integrated circuits for optical communication system, including the SiGe-based light emitting chip and photo detector chip, a tunable transimpedance amplifier, and automatic gain control amplifier. The integration circuits are designed using the TSMC 0.35μm SiGe 3P3M process and the 0.18μm CMOS 1P6M process, respectively.
In the first part, the SiGe-based light-emitting chips are studies. Using the PN junction of BJT, and the four types of BJTs provided by the TSMC 0.35μm SiGe 3P3M process, light-emitting chips are designed with several metal line widths and two kinds of layout. The design using model 062 and general layout has the biggest luminous power at the wavelength of 1150 microns. Moreover, the design of SiGe photo detector chips is studied. It is found that when the red light, green light, and blue light are used as the input light, the best performance is obtained for the red light.
In the second part, the design and implementation of a tunable transimpedance amplifier(TIA) is presented using the TSMC 0.35μm SiGe 3P3M process. The fabricated TIA exhibits a tunable gain from 41.52 to 55.1 dBΩ, a -3dB bandwidth of 3.24~2.11GHz for a photodiode input capacitance of 0.25pF. The power consumption is 29.99mW from a 3.3-V voltage supply.
The third part deals with the simulation of an optical receiving front-end circuit. It consists of a differential transimpedance amplifier and a automatic gain control amplifier. It is designed with the TSMC 0.18μm CMOS 1P6M process. Its simulation result exhibits a tunable gain from 63.9 to 91.57dBΩ, a -3dB bandwidth of 1.75GHz for a photodiode input capacitance of 0.25pf. The power consumption is 84.54mW from a 1.8-V voltage supply.

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