由於希望在未來可以將光電元件與電子元件積體化，而製作電子元件時大部分的基板都是矽，最近氮化鎵晶圓廠商開始商品化氮化鎵磊晶在矽基板(GaN-on-Si)。而在過去，本實驗室是以氮化鎵磊晶在藍寶石基板(GaN-on-Sapphire)去製作光電元件，所以此研究是本實驗室第一次使用矽基板生長的氮化鎵來製作共振腔發光二極體(Resonant cavity light-emitting diode, RCLED)，上下反射鏡分別為介電質DBR和銀鏡，成功做出藍光RCLED，共振腔長約為4µm。
本實驗也使用了本實驗室的專利矽擴散製程去做為電流阻擋層，將部分的p-GaN反轉為n-GaN，去侷限我們RCLED的發光孔徑，直徑為20µm。此外，以離子深蝕刻機由背面移除矽基板做出通孔(via hole)，並鍍上銀鏡，發現使用電子束蒸鍍機來製作銀鏡的反射效果很好，在未鍍上銀鏡時，通入電流20mA下，光功率為0.16mW，鍍上銀鏡後，光功率為0.31mW，成長了至少80%。
我們也比較了在鍍製介電質DBR的頻譜表現，在鍍製介電質DBR前，半高寬約為36奈米，在鍍製介電質DBR後，半高寬約為31奈米，雖然頻譜結果表現只有微幅縮窄，但如果能夠量測到垂直方向出光的頻譜，半高寬一定會更窄，頻譜的縮窄一定會更明顯。

Most of the substrates used in the production of electronic components are silicon. In pursuit of optoelectronic and electronic components being integrated in the future, GaN epitaxy grown on silicon substrate was commercialized recently. In the past, our laboratory used GaN-on-sapphire wafers to fabricate optoelectronic components. For the first time in this laboratory, this study used a GaN-on-Si wafer to fabricate a resonant cavity light-emitting diode (RCLED). The top and bottom mirrors were dielectric distributed Bragg reflector (DBR) and silver mirror, respectively. The cavity length was approximately 4 µm.
This work used our laboratory’s patent on silicon diffusion process to make a current blocking layer, part of the p-GaN being converted to n-GaN, that defined the luminous aperture of the RCLED of 20µm in diameter. Moreover, we selectively removed the backside silicon substrate to make via holes by using deep reactive ion etching, and deposited a silver mirror by using an electron beam evaporator. We found the reflection effect of the silver mirror was very good. Under the same driving current of 20mA, the optical power before and after mirror deposition was 0.16mW and 0.31mW, respectively. There was an increase of at least 80 percent.
We also compared the emission spectrum of the RCLED before and after dielectric DBR deposition. Before depositing dielectric DBR, the full width at half maximum was about 36nm. After depositing dielectric DBR, it was about 31nm. The spectral width seemed to decrease slightly, but if we can measure the light output in the vertical direction, the full width at half maximum would be much narrower, the reduction in the spectral width can be more obvious.

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