研究生: |
邱奕翔 I-Hsiang Chiu |
---|---|
論文名稱: |
改進有機太陽能電池元件之結構以提升其壽命之研究 Improving the Life Time of Organic Solar Cell by the Modification of the Device Structures |
指導教授: |
戴龑
Yian Tai |
口試委員: |
吳季珍
Jih-Jen Wu 江志強 Jyh-Chiang Jiang 林麗瓊 Li-Chyong Chen 陳貴賢 Kuei-Hsien Chen |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 化學工程系 Department of Chemical Engineering |
論文出版年: | 2011 |
畢業學年度: | 99 |
語文別: | 中文 |
論文頁數: | 136 |
中文關鍵詞: | 壽命 、有機太陽能電池 、氧化鋅 、自組裝單分子 |
外文關鍵詞: | lifetime, organic solar cell, ZnO, SAM |
相關次數: | 點閱:392 下載:5 |
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本論文主要目的為改變有機太陽能電池之結構以增加其元件壽命。研究主題分為兩部分,第一部份:使用含羧基自組裝單分子薄膜修飾氧化銦錫電極,應用於以CuPc為P type 材料的小分子太陽能電池元件(ITO/PEDOT:PSS/CuPc/C60/BCP/Al),其效率及元件壽命皆有顯著的提升。我們藉由含不同羧基數量之自組裝單分子薄膜阻擋酸性水溶液PEDOT:PSS對ITO電極的破壞,以提升太陽能電池之壽命,實驗結果顯示,使用含4個羧基的自組裝單分子薄膜修飾ITO,與未經修飾之ITO元件相比,可以提升元件效率10%,並且使元件的壽命延長200%。第二部分:在反向太陽能電池中使用氧化鋅當作電子傳導層相對於正向太陽能電池(ITO/PEDOT:PSS/P3HT:PCBM/Al)中使用PEDOT:PSS當作電洞傳導層,可避免PEDOT:PSS對ITO電極的破壞,其中的氧化鋅薄膜是利用不同噴霧裂解的條件所製備,而在製程條件250℃ 5min下,可得特性較佳的氧化鋅薄膜,其光電轉換效率為3.12%
This work focused on increasing the life time of organic solar cell (OSC) by modification of device structure. The study is separated into two parts. In the first part, we modified the ITO electrode of CuPc-based OSC (ITO/CuPc/C60/BCP/Al) by self-assembled monolayers ( SAMs ) with carboxylic acid functional groups. Both the power conversion efficiency (PCE) and the life time of the modified OSC can be improved. We attribute the improvement of the life time of the device to the blocking effect by SAMs which preventing the bottom ITO layer from being etched by PEDOT:PSS. The experimental results shown that the PCE increased 10% relative to the unmodified device, and the lifetime improved 200% by using SAM molecule with four carboxylic group. In the second part, we modify the conventional P3HT-based BHJ OSC (ITO/PEDOT:PSS/P3HT:PCBM/Al) to an inverted type with an thin ZnO layer as electron transporting layer in order to avoid PEDOT:PSS. As a consequent, preventing the etching of ITO by PEDOT:PSS. The ZnO layer was fabricated by spary pyrolsis method, and various spary conditions have been investigated. The results shown that the best quality of ZnO layer can be fabricated under the condition of 200℃ and 5min, wherethe PCE can be achieved to 3.12%
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