本研究以石墨烯與二硫化錸為材料製作表面增強拉曼散射之基材(SERS)，本實驗以化學氣象沉積在銅箔上沉積石墨烯，並轉移至300nm之氧化矽基板，以石墨烯或氧化石墨烯為襯底並以化學氣象沉積生長二硫化錸（ReS2) ，以R6G作為拉曼增強散射目標分子，以拉曼光譜之614 cm-1作為目標特徵峰為測量材料基本性質，以SEM、AFM做表面型態分析，以XPS、Raman、XRD做結構分析，以UV、PL做光學分析，並且用四點探針量測樣品的電阻。
本實驗合成之石墨烯為雙層結構，ID/IG比為0.075，I2D/IG比為1.53，以CVD合成之二硫化錸以UV測量光譜之吸收波並以Tauc方法計算能隙為1.56 eV，以PL螢光光譜測量能隙為1.55 eV。
本研究以石墨烯與二硫化錸主組合為四種SERS基材，分別為純二硫化錸（SiO2/ReS2)、石墨烯與二硫化錸（SiO2/G/ReS2)、氧化石墨烯與二硫化錸（SiO2/GO/ReS2)和氧化石墨烯濺鍍錸顆粒沉積二硫化錸（SiO2/GO/Re/ReS2）並以吸附10-2M R6G之氧化矽基板作為標準基板計算在R6G濃度10-7 M時各樣品之強化因子(AEF)，SiO2/ReS2、SiO2/G/ReS2、SiO2/GO/ReS2、SiO2/GO/Re/ReS2之AEF分別為、4.5x104、7.3 x104、7.9 x104、1.4 x105。

This study focuses on the fabrication of surface-enhanced Raman scattering (SERS) substrates using graphene and rhenium disulfide (ReS2) as materials. Graphene was deposited on copper foil through chemical vapor deposition (CVD) and transferred onto a silicon wafer with 300 nm of silicon oxide (SiO2). Graphene or oxidized graphene (GO) was used as a substrate for the chemical vapor deposition growth of ReS2. The target molecule for Raman-enhanced scattering was Rhodamine 6G (R6G), and the characteristic peak at 614 cm-1 was measured. Various characterization techniques were employed to analyze the materials' properties, including scanning electron microscopy (SEM) and atomic force microscopy (AFM) for surface morphology analysis, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and X-ray diffraction (XRD) for elemental analysis, and UV-Vis spectroscopy (UV) and photoluminescence spectroscopy (PL) for optical analysis. The sheet resistance of the samples was measured using a four-point probe.
The synthesized graphene in this work was a bilayer structure, with an ID/IG ratio of 0.075 and an I2D/IG ratio of 1.53. The ReS2 synthesized via chemical vapor deposition (CVD) was characterized by UV absorption spectroscopy, yielding an energy gap (bandgap) of 1.56 eV using the Tauc method. The PL fluorescence spectrum indicated an energy gap of 1.55 eV.
The study focused on four main configurations: pure ReS2 on SiO2 (SiO2/ReS2), graphene and ReS2 on SiO2 (SiO2/G/ReS2), oxidized graphene and ReS2 on SiO2 (SiO2/GO/ReS2), and oxidized graphene coated with rhenium particles and ReS2 on SiO2 (SiO2/GO/Re/ReS2). The enhancement factors (AEFs) of these samples with 10-7 M R6G were obtained using a standard oxidized silicon (SiO2) wafer, adsorbed with a concentration of R6G of 10-2 M. The AEF values for SiO2/ReS2, SiO2/G/ReS2, SiO2/GO/ReS2, and SiO2/GO/Re/ReS2 were 4.5x104, 7.3x104, 7.9x104, and 1.4x105, respectively.

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