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研究生: 陳昶儫
Chang-Hao Chen
論文名稱: Latency-Aware Management Scheme for Healing Solid-State Drives
Latency-Aware Management Scheme for Healing Solid-State Drives
指導教授: 謝仁偉
Jen-Wei Hsieh
口試委員: 張原豪
Yuan-Hao Chang
陳雅淑
Ya-Shu Chen
周賜福
Joesph Arul
學位類別: 碩士
Master
系所名稱: 電資學院 - 資訊工程系
Department of Computer Science and Information Engineering
論文出版年: 2015
畢業學年度: 103
語文別: 英文
論文頁數: 64
中文關鍵詞: lifetimewear levelingself-healingperformanceflash memory
外文關鍵詞: lifetime, wear leveling, self-healing, performance, flash memory
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In recent years, flash-memory-based Solid-State Drive (SSD) has gradually replaced HDD as main storage device due to
its high performance, low power consumption, and shock resistance natures. The reliability is always a critical issue for Solid-State
Drive (SSD) since each typical flash-memory block can only endure 3,000 to 5,000 erase cycles. Although researchers have proposed
various wear-leveling policies that evenly erase blocks to maximize lifetime of SSDs, the improvement is still limited. The healing
operation, which is based on self-healing architecture, can recover damaged tunnel-oxide layer by heating the cells of flash blocks.
With the healing operation, the endurance of flash-memory blocks can be several times more than that of typical ones. However, its
high latency would largely degrade the performance of SSDs if the healing operation is not properly managed. In this paper, we
propose a latency-aware management scheme, which can hide the overhead of heal latency while taking wear leveling into
consideration. The experimental results showed that our scheme not only achieved better wear leveling (by 72% to 90%) but also
mitigated the impact of healing latency, compared with the related work. With the proposed scheme, the average response time is
improved by 14% to 55% under different traces.


In recent years, flash-memory-based Solid-State Drive (SSD) has gradually replaced HDD as main storage device due to
its high performance, low power consumption, and shock resistance natures. The reliability is always a critical issue for Solid-State
Drive (SSD) since each typical flash-memory block can only endure 3,000 to 5,000 erase cycles. Although researchers have proposed
various wear-leveling policies that evenly erase blocks to maximize lifetime of SSDs, the improvement is still limited. The healing
operation, which is based on self-healing architecture, can recover damaged tunnel-oxide layer by heating the cells of flash blocks.
With the healing operation, the endurance of flash-memory blocks can be several times more than that of typical ones. However, its
high latency would largely degrade the performance of SSDs if the healing operation is not properly managed. In this paper, we
propose a latency-aware management scheme, which can hide the overhead of heal latency while taking wear leveling into
consideration. The experimental results showed that our scheme not only achieved better wear leveling (by 72% to 90%) but also
mitigated the impact of healing latency, compared with the related work. With the proposed scheme, the average response time is
improved by 14% to 55% under different traces.

1 Introduction 6 2 Background and Motivation 9 2.1 NAND flash memory . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2 Self-heal NAND flash memory . . . . . . . . . . . . . . . . . . . . 10 2.3 Wear Leveling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.4 Recently Work . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.5 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3 Method 17 3.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.2 Initial Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.3 Write Operation and Buffering Time . . . . . . . . . . . . . . . . 21 3.4 Heal Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.5 Garbage Collection . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.6 Die Parallelism . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4 Experiments 35 4.1 Experimental Setup . . . . . . . . . . . . . . . . . . . . . . . . . . 36 4.2 Read Delay and Freeze operation . . . . . . . . . . . . . . . . . . 39 4.3 Response Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 4.3.1 Read Response Time . . . . . . . . . . . . . . . . . . . . . 41 1 4.3.2 Write Response Time . . . . . . . . . . . . . . . . . . . . . 43 4.3.3 Average Response Time . . . . . . . . . . . . . . . . . . . 45 4.4 Block Erase Count and Wear Leveling . . . . . . . . . . . . . . . 46 4.5 Write Amplification and Lifetime . . . . . . . . . . . . . . . . . . 47 5 Conclusion 51 Appendices 55 A Appendices 55

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