本論文主要為應用於高速半導體雷射之散熱基板技術開發，由於高速雷射在操作時，需注入較大之電流以達到輸出模態穩定，而電流越大，所產生之熱能越多，造成波長飄移、輸出功率下降、以及頻寬下降，故在雷射封裝時，散熱設計顯得十分重要。基板之設計主要分為幾項重要因素，其一為增加熱之傳遞能力，達到雷射散熱之效果，在此考量下，正面電極朝下為縮減散熱距離之有效方法。另外，雷射在高頻操作下，其電極需與元件做設計，以達到阻抗匹配，因此針對雷射基板設計，採用共平面電極，以封裝高速雷射。在此情況下基板需成長薄膜絕緣層，以防止漏電流產生，但仍保有良好的散熱能力。本論文利用3倍頻量測方法，對不同絕緣層進行導熱係數的量測，進而分析出適合之絕緣層。
對準耦合為高速雷射散熱基板另一重要技術，我們利用氫氧化鉀蝕刻凹槽，使透鏡光纖能夠深入元件本身，提高耦合效率，另外垂直對準上，嘗試利用凹槽成長合金焊料之方式，使晶粒能黏著於基板上，藉由合金焊料與凹槽面積比不同的設計，降低基板與元件之間的高低差，有效控制垂直方向的黏合高度。

The thesis focuses on the development of a thermal-managed sub-mount platform for high-speed semiconductor laser applications. As the high-speed laser usually operates at relatively higher current bias in order to have a stable and single-frequency lasing output, however, the heating issue causes the wavelength shift, output power drop and the decay of its high-speed performance. Therefore, thermal management is of vital importance for laser packaging. The use of p-side down configuration for laser packaging is able to conduct the heat efficiently. The use of ground-signal-ground (GSG) planar electrode configuration to have impedance match is also important. In order to avoid the current leakage, the growth of a thin dielectric film between the electrode and the silicon sub-mount is necessary. We have established a 3ω measurement setup to measure the thermal conductivity of the dielectric film in order to find the best material for both electrical isolation and heat dissipation.
On the other hand, the optical coupling between packaged laser and output fiber/waveguide is also challenging. We have fabricated input/output U-grooves to passively align the fiber to the optical output field. However, the uncertainty of bonded laser chip in vertical direction is the main roadblock. By designing the area ratio between the etched trenches and the solders, we have successfully reduced the bonding gap between the sub-mount and the laser chip, thus opening the possibility of the proposed platform for practical applications.

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