本論文研製一高效率邊界導通模式之升壓型功率因數修正器，經由系統架構動作推導和設計電路元件，運用軟體SIMetrix/SIMPLIS建置邊界導通模式之功率因數修正器之模型，驗證系統設計參數之可行性，並且分析系統中之元件損耗，最後研製一輸入交流電壓90V~264V，輸出直流電壓385V之200W升壓型功率因數修正器，使用通嘉科技LD7593DA控制器來實現於邊界導通模式操作，並使用第三代半導體中的氮化鎵功率開關，解決高切換頻率所造成的損耗及降低導通損失，其實測結果顯示，在最低輸入交流電壓90V及輸出滿載時，使用氮化鎵功率開關之整體效率較使用MOSFET的效率高出4.219%，其四點平均效率為95.076%；在最高輸入交流電壓264V及輸出滿載時，則是高出1.92%，其四點平均效率98.024%，與損耗分析效率差異為0.1744%。系統於不同輸入交流電壓，滿載效率最高可達98.34%、最高功率因數可達0.997。

This thesis presents the development of a high-efficiency boost power factor corrector operating in boundary conduction mode. The system architecture and circuit components are derived and designed, and the model of the power factor corrector operating in boundary conduction mode is built using the SIMetrix/SIMPLIS software. The feasibility of the system design parameters is verified, and the component losses in the system are analyzed. Finally, a 200W boost power factor corrector is developed with an input AC voltage range of 90V to 264V and an output DC voltage of 385V. The boundary conduction mode operation is achieved using the LD7593DA controller from Leadtrend, and gallium nitride power technology from the third-generation semiconductors are utilized to mitigate losses caused by high switching frequency and reduce conduction losses. The experimental results demonstrate that, at the lowest input AC voltage of 90V and full load output, the overall efficiency of using gallium nitride power switches surpasses the efficiency achieved with MOSFETs by 4.219%. The average efficiency over four data points is measured at 95.076%. Similarly, at the highest input AC voltage of 264V and full load output, the efficiency is higher by 1.92%, resulting in an average efficiency of 98.024%. The difference between the efficiency obtained through loss analysis and the measured efficiency is 0.1744%.The system achieves a maximum efficiency of 98.34% and a maximum power factor of 0.997 at different input AC voltages and full load.

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