五環素有機場效電晶體載子傳輸機制探討｜國立臺灣科技大學博碩士論文系統

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研究生：	戴宏霖 Hung-lin Tai
論文名稱：	五環素有機場效電晶體載子傳輸機制探討 In-Situ Probing Thickness Dependence of the Electrical Characteristics of Pentacene- Based Field-Effect Transistors
指導教授：	李志堅 Chih-chien Lee
口試委員:	范慶麟 Ching-lin Fan 劉舜維 Shun-wei Lui
學位類別：	碩士 Master
系所名稱：	電資學院 - 電子工程系 Department of Electronic and Computer Engineering
論文出版年：	2010
畢業學年度：	98
語文別：	中文
論文頁數：	70
中文關鍵詞：	有機場效電晶體
外文關鍵詞：	Pentacene Field-Effect Transistors
相關次數：	點閱：383 下載：1
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上一筆

本研究以真空即時量測探討各單分子層的五環素薄膜電晶體電性，發現在高真空下極薄的一個約1.57 nm單分子層時已有場效遷移率產生。隨著膜厚增加、表面覆蓋性上升，場效遷移率也隨之大幅增進直至3.2個分子層的飽和膜厚。此關鍵性的飽和膜厚之後，卻已無法再提供有效電荷載子給予導電通道。以分子微觀的角度，發現五環素分子成長，呈現初期為薄膜層，之後卻以島塊狀成形的Stranski-Krastanov成長機制。在此發現五環素分子初始幾層的單分子層成長品質和所被蒸鍍的介電層材料密切相關，並會影響表面形貌、分子堆疊及載子場效遷移率。

The pentacene field-effect transistors were studied as a function of molecular monolayer(ML) with in-situ electrical measurement. Field-effect mobility occurs in one thin monolayer(~ 1.57 nm) in high vacuum. Carrier mobility dramatically increases with increasing thickness and surface coverage until saturation thickness (3.2 ML). Beyond the key of saturation thickness, no more effective charge carriers contribute to conducting channel. The atomic force microscopy images of the pentacene layer show the Stranski-Krastanov growth mechanism; molecules change their growth direction from lateral to vertical. The growth quality of first few pentacene is strongly related to insulator material and influences the morphology, molecular packing, and electrical characterization in this research.

第一章	緒論..............................................................................................1
1-1	前言.....................................................................................................1
1-2	有機半導體介紹.................................................................................3
1-2-1有機半導體特性與傳輸機制..................................................3
1-2-2有機半導體能階......................................................................5
1-3	有機半導體材料.................................................................................7
1-3-1有機半導體材料介紹.............................................................. 7
1-3-2五環素(pentacene)..................................................................10
1-4	研究動機與方法.......................................11
第二章 理論分析....................................................................................13
2-1有機場效電晶體介紹及操作原理....................................................13
2-1-1場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistors; MOSFETs)……………………………………………………………...13
2-1-2薄膜電晶體(thin-film transistors; TFTs)……………………15
2-1-3有機場效電晶體(organic field-effect transistors; OFETs)….16
2-2 製程方式(Fabrication method)…………………………………….19
2-2-1真空蒸鍍(vacuum evaporation)…………………………….19
2-2-2溶液塗佈(solution-processed deposition)…………………..21
2-3理論模型分析....................................................................................23
2-3-1 輸出特性分析(output characteristic)………………………23
2-3-2傳導特性分析(transfer characteristic)……………………...26
2-4接觸電阻(contact resistance)………………………………………28
2-4-1 接觸電阻起源.......................................................................28
2-4-2 接觸電阻量測.......................................................................30
2-5 有機金屬接觸介面(organic/metal interface)…………………….. 32
第三章 實驗............................................................................................32
3-1實驗材料...........................................................................................32
3-1-1 基板.......................................................................................32
3-1-2 有機材料...............................................................................32
3-2實驗儀器說明....................................................................................33
3-2-1 超音波震盪器(ultrasonic cleaner)…………………………33
3-2-2 氧電漿清潔機(O2 plasma cleaner)………………………...33
3-2-3 旋轉塗佈機(spin coater)…………………………………...34
3-2-4曝光機....................................................................................34
3-2-5 真空蒸鍍即時量測系統.......................................................35
3-2-6原子力顯微鏡(Atomic Force Microscope , AFM)…………36
3-2-7  X光繞射儀(XRD)………………………………………..37
3-2-8  光電子光譜儀(AC-2)……………………………………..38
3-2-9  薄膜應力量測系統(α-step)……………………………….39
3-2-10接觸角量測儀......................................................................40
3-2-11 膜厚修正因子(tooling factor)…………………………….41
3-3元件製作............................................................................................42
3-3-1製作流程................................................................................42
3-3-2漏電流量測.............................................................................45
3-3-3電極處理.................................................................................46
第四章 結果與討論................................................................................48
4-1標準有機薄膜電晶體電性部分........................................................48
4-2 膜厚相關的載子遷移率..................................................................50
4-3 膜厚相關的臨界電壓......................................................................53
4-4膜厚相關的汲極電流和電流開關比................................................55
4-5 表面形貌和分子堆疊程度分析......................................................57
4-6 分子結晶性及堆疊程度分析..........................................................62第五章 結論與未來展望........................................................................65
5-1 結論..................................................................................................65
5-2 未來展望..........................................................................................65
參考文獻.................................................................................................66

                                

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