本研究成功利用陽極層離子源之反應式離子束濺鍍沉積氧化鈷與氧化鈷銅薄膜，薄膜分別於製程溫度150℃與300℃下以不同氧氣流量比沉積於矽基板與石英基板上，實驗結果顯示，於150℃下沉積之薄膜皆屬非晶薄膜，而在300℃下沉積之氧化鈷與氧化鈷銅薄膜形成尖晶石結構，當氧氣流量增加時會導致薄膜結晶性變差且電阻率下降，摻雜銅後亦會造成薄膜結晶性劣化且電阻率下降，穿透光譜顯示摻雜銅會導致帶間缺陷的形成，光電化學測量結果顯示氧化鈷及氧化鈷銅皆為P型半導體，其中氧化鈷銅薄膜表現出最高的光電流密度，其原因為摻銅後會增加光子吸收進而改善帶間缺陷所致。

Cobalt oxide and copper-cobalt oxide thin films have been successfully deposited by reactive ion beam sputter deposition utilizing an anode layer ion source sputtering module. Samples were deposited at 150 and 300℃ at various oxygen flow rates on both Si and quartz substrates. Experimental results show that samples deposited at 150℃ are all amorphous, while both cobalt and copper-cobalt oxide deposited at 300℃ exhibit a spinel structure. Increasing oxygen partial flow rates results in deteriorated crystalline quality and reduced resistivity, while the introduction of copper also results in deteriorated crystalline quality and reduced resistivity. Transmission spectra indicate that copper results in the formation of inter-band defect states. Photoelectrochemical measurements show that both cobalt and copper-cobalt oxide are of p-type, while copper-cobalt oxide shows the highest photocurrent density. This improved photocurrent density is attributed due to the presence of inter-band states that results in improved absorption of photons.

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