本實驗使用反應式離子束濺鍍法，以氧化鋅為緩衝層並於300度C下以石英及玻璃基板沉積含氮p型氧化鋅薄膜。XRD分析以氮流量0.5及5 sccm沉積之薄膜，5 sccm其(002)繞射峰值往小角度偏移而0.5 sccm樣品沿(002)方向成長不偏移，分別代表分子氮取代氧及原子氮取代氧的位置，600度C退火後(002) 繞射峰值半高寬變大，代表氮擴散出薄膜形成空缺等缺陷。拉曼光譜儀分析含氮氧化鋅薄膜得到275、436、582 cm-1三個峰值，證明氮已入氧化鋅，經三分鐘500度C退火後可得最強的582 cm-1峰值，顯示氮在此退火條件下被活化。隨著退火溫度升高，275、582 cm-1峰值逐漸降低，而436 cm-1峰值逐漸明顯，代表氮擴散出薄膜。SIMS分析氮摻雜的濃度約為1021 cm-3，提升氮流量析發現氮濃度並沒有明顯提昇代表氮的固態溶解度(Solubility)低，隨著退火溫度升高發現氮濃度有明顯的下降代表氮擴散出薄膜。霍爾量測分析得到在氮流量0.5 sccm時可得p型氧化鋅薄膜，經500度C三分鐘退火後得到最佳電洞濃度為2*1017/cm3，遷移率3-55 cm2V-1s-1，但以2 sccm及5 sccm所沉積之薄膜卻顯示出n型，推測是因氮流量上升使得分子氮取代氧(N2)O形成雙倍淺層施子的機率升高，而當退火溫度升高伴隨著電阻率升高代表氮擴散出氧化鋅薄膜。

Nitrogen doped ZnO thin films have been prepared by reactive ion beam sputter deposition on quartz and glass substrates at 300C utilizing un-doped ZnO buffer layers. Experimental results show that with a nitrogen flow rate of 5 sccm and 0.5 sccm, the (002) diffraction peak of ZnO:N shifts to lower angles and exhibit preferred orientation along the c-axis, indicating the replacement of oxygen by molecular nitrogen and atomic nitrogen. Raman spectroscopy analysis shows three peaks at 275、436、582 cm-1, indicating the incorporation of nitrogen into ZnO. Post-growth annealing at 500C for three minutes results in the strongest 582 cm-1 peak intensity. Annealing at higher temperature reduces the 582 cm-1 peak intensity while improving the 436 cm-1 peak intensity, indicating out-diffusion of nitrogen and improved ZnO crystalline quality. Hall measurement shows that p-type ZnO was obtained utilizing 0.5 sccm nitrogen flow rate. Annealing at 500C for three minutes results in the highest hole concentration of 2*1017/cm3 with a mobility of 3-55 cm2V-1s-1. ZnO:N deposited at 2 and 5 sccm exhibit n-type, which is due to the formation of (N2)O.

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