NAND Flash memory has a dramatic improvement in capacity in the past decade, but with endurance and performance degrade. Moreover, flash memory reads and writes data in unit of a page. With the capacity growing, page size became larger and this may cause more read-modify-write that caused extra wearing on flash memory. Small write in a large page causes wear unleveling, because the wearing of cells is different between programmed and unprogrammed, this will reduced the lifetime of flash memory. In this paper, we devoted to solve this problem, we proposed a FP and SP management scheme to reduce the wearing caused by read-modify-write and small write in a large page, and we also proposed a subparity protection method to enhanced the reliability of NAND flash thus we can extend the lifetime of NAND flash memory by about 1.4 times when the page size is 16KB.

NAND Flash memory has a dramatic improvement in capacity in the past decade, but with endurance and performance degrade. Moreover, flash memory reads and writes data in unit of a page. With the capacity growing, page size became larger and this may cause more read-modify-write that caused extra wearing on flash memory. Small write in a large page causes wear unleveling, because the wearing of cells is different between programmed and unprogrammed, this will reduced the lifetime of flash memory. In this paper, we devoted to solve this problem, we proposed a FP and SP management scheme to reduce the wearing caused by read-modify-write and small write in a large page, and we also proposed a subparity protection method to enhanced the reliability of NAND flash thus we can extend the lifetime of NAND flash memory by about 1.4 times when the page size is 16KB.

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