研究生: |
林翰毅 Han-Yi Lin |
---|---|
論文名稱: |
HLC: Software-based Half-Level Cell Flash Memory HLC: Software-based Half-Level Cell Flash Memory |
指導教授: |
謝仁偉
Jen-Wei Hsieh |
口試委員: |
楊佳玲
Chia-Lin Yang 張立平 Li-Pin Chang 吳晉賢 Chin-Hsien Wu |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 資訊工程系 Department of Computer Science and Information Engineering |
論文出版年: | 2014 |
畢業學年度: | 102 |
語文別: | 英文 |
論文頁數: | 44 |
中文關鍵詞: | NAND flash memory 、solid-state drives (SSDs) 、reliability 、endurance |
外文關鍵詞: | NAND flash memory, solid-state drives (SSDs), reliability, endurance |
相關次數: | 點閱:292 下載:1 |
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In recent years, flash memory has been widely used in embedded systems, portable devices, and high-performance storage products due to its non-volatility, shock resistance, low power consumption, and high performance natures. To reduce the product cost, multi-level-cell flash memory (MLC) has been proposed; compared with the traditional single-level-cell flash memory (SLC) that only stores one bit of data per cell, each MLC cell can store two or more bits of data. Thus MLC can achieve a larger capacity and reduce the cost per unit. However, MLC also suffers from the degradation in both performance and reliability. In this paper, we try to enhance the reliability and reduce the product cost of flash-memory based storage devices from a totally different perspective. We propose a half-level-cell (HLC) management scheme to manage and reuse the worn-out space in SSD; through our management scheme, the system can treat two corrupted pages as a normal page without sacrificing performance and reliability. To the best of our knowledge, this is the first research that reclaims free space by reviving the corrupted pages. The experiment results show that the lifetime of SSD can be extended by 48.54%, and the response time of SSD cache can be improved by 17.99% for the trace of general users applications with our proposed HLC management scheme.
In recent years, flash memory has been widely used in embedded systems, portable devices, and high-performance storage products due to its non-volatility, shock resistance, low power consumption, and high performance natures. To reduce the product cost, multi-level-cell flash memory (MLC) has been proposed; compared with the traditional single-level-cell flash memory (SLC) that only stores one bit of data per cell, each MLC cell can store two or more bits of data. Thus MLC can achieve a larger capacity and reduce the cost per unit. However, MLC also suffers from the degradation in both performance and reliability. In this paper, we try to enhance the reliability and reduce the product cost of flash-memory based storage devices from a totally different perspective. We propose a half-level-cell (HLC) management scheme to manage and reuse the worn-out space in SSD; through our management scheme, the system can treat two corrupted pages as a normal page without sacrificing performance and reliability. To the best of our knowledge, this is the first research that reclaims free space by reviving the corrupted pages. The experiment results show that the lifetime of SSD can be extended by 48.54%, and the response time of SSD cache can be improved by 17.99% for the trace of general users applications with our proposed HLC management scheme.
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