研究生: |
林昱銘 Yu-Ming Lin |
---|---|
論文名稱: |
電致動力輔助化學機械平坦化加工之雙向交錯式電極開發應用於矽導微孔晶圓研究 Development of Bidirectional Electrode in Electro-Kinetic Force Assisted Chemical Mechanical Planarization for Through-Silicon-Via Wafer Planarization |
指導教授: |
陳炤彰
Chao-Chang Chen |
口試委員: |
楊棋銘
Chi-Ming Yang 吳煌榮 Whang-Zong Wu 呂立鑫 Li-Hsin Lu 田維欣 Wei-Hsin Tien 陳炤彰 Chao-Chang Chen |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 機械工程系 Department of Mechanical Engineering |
論文出版年: | 2018 |
畢業學年度: | 106 |
語文別: | 中文 |
論文頁數: | 247 |
中文關鍵詞: | 三維堆疊積體電路 、電致動力輔助化學機械平坦化製程 、銅薄膜化學機械拋光 、玻璃晶圓平坦化 、矽導微孔 |
外文關鍵詞: | 3D Stacking IC (3DS-IC), Electro-Kinetic Force Chemical Mechanical Polishing/Planarization (EKF-CMP), Cu-Blanket film CMP, Trench-Silicon-Via (TSV) |
相關次數: | 點閱:331 下載:8 |
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本研究主要為設計雙向交錯式電極,研發新一代電致動力輔助化學平坦化(Electro-Kinetic Force Chemical Mechanical Plolishing, EKF-CMP)系統,應用於銅薄膜晶圓、無鹼玻璃晶圓及矽導微孔晶圓平坦化製程。研究方法先以COMSOL模擬建構電滲流模組,利用粒子溫度進行模擬數據量化,找出不同拋光墊厚度、電極間距、電極寬度以及拋光墊溝槽幾何條件下最佳之雙向交錯式電極設計;並且與導電環整合成一套,透過偏壓使雙向式電極形成切線方向與向心方向之電滲流,達到磨粒均勻散佈於拋光墊並且提高製程時晶圓之材料移除率以及表面品質。實驗驗證結果於八吋銅薄膜晶圓平坦化製程上可提升21.45%之材料移除率以及降低19.32%之表面非均勻性;於無鹼玻璃晶圓平坦化製程上可提升10.03%之材料移除率,而非均勻度可改善26.86%;在八吋矽導微孔(Through-Silicon-Via, TSV)晶圓上可降低24.59%之Dishing缺陷,驗證EKF-CMP有助於三維堆疊積體電路(3D Stacking IC, 3DS-IC)上降低缺陷之效益。本研究成果未來可應用於量產型TSV CMP製程研發。
This study aims to design a bi-directional electrode for developing a novel Electro-Kinetic Force Chemical Mechanical Polishing/Planarization (EKF-CMP) for Cu-CMP and glass wafer CMP. Currently CMP is one of the major processes in the fabrication of Integrated Circuits (IC) and it plays an important role to achieve global planarization and pattern uniformity of wafers and devices. In previous studies of EKF-CMP, one-dimensional electro-osmosis flow (EOF) circulation of abrasives has been generated to enhance material removal rate (MRR) in Cu-Blanket film CMP. However, the EOF can be affected by the rotation of platen or pad. In this study, a two-dimensional or bi-directional electrode is designed with 3D simulation by COMSOL Multiphysics and quantized by Granular Temperature (Tg) method. Simulation results are then compared with visualization tank for verification of EOF circulation. The bi-directional electrode can generate EOF from axial direction electrode and radial direction and then improve the distribution of abrasives in the slurry and also uplift the abrasive inside the pad groove. Experimental results of Cu-CMP of 8 inch copper blanket wafer have shown that the MRR improves 21.45% as compared with conventional CMP process. For experimental results of Trench-Silicon-via, TSV-CMP, the developed EKF-CMP can reduce 17% processing time based on end-point-detection (EPD) system of spindle motor current measurement. Results of 8 inch TSV wafer have achieved the dishing defect from EKF-CMP process improving by 24.59%. Therefore, effects of EKF-CMP have been verified for 3D Stacking IC (3DS-IC). Results of this study can be further applied for high-volume TSV-CMP.
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