本論文研製一高功率密度電源模組，此架構使用主動箝位順向式轉換器，能夠使部分開關元件實現零電壓導通以降低切換損耗；二次側利用同步整流技術，進而降低導通損耗、提高效率。為縮小電路體積，輔助開關使用P通道MOSFET以減少隔離驅動元件，功率級PCB使用散熱能力較佳的鋁金屬基板並配合平板變壓器技術，達到提升功率密度之目的。本論文分析電路架構之工作原理，並實作一台輸入電壓範圍40 V至160 V、輸出為5 V、輸出功率200 W的轉換器，最高轉換效率可達92.93%，其功率密度為2.45W/cm3。

This thesis presents the implementation of a high power density module. Active clamp forward is applied to this topology in which part of power MOSFETs can achieve zero-voltage switching to reduce the switching loss. The secondary side utilizes synchronous rectification technique to reduce the conduction loss and raise the conversion efficiency. For the auxiliary switch, a P-channel MOSFET is employed to reduce the required isolation driver circuit. In addition, the PCB is made of aluminum which with better capacity for heat dissipation and the transformer applies planar technique in order to raise power density. The operating principle of the proposed converter has been analyzed in detail and implements a circuit which is designed as input voltage range from 40 V to 160 V, 5 V output voltage and 200 W output power. The experimental results show that the power efficiency can be up to 92.93% and the power density is 2.45 W/cm3.

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