此實驗以反應式離子束濺鍍法成長氧化銀薄膜，採用毛細式離子源(6∼8 kV、100∼500 uA)及陽極層離子源 (0.7 kV、13.5 mA) ，同時通入氬氣及氧氣，氬氣為濺鍍氣體，氧氣為反應氣體，調變氬/氧流量比。實驗結果顯示以毛細式離子源所沈積之薄膜，不論沈積溫度或氬/氧流量比，所沉積薄膜皆為銀，並未形成氧化銀，推測原因為濺射出粒子動能較高，不易形成氧化銀。以陽極層離子源在室溫下所沉積之薄膜，當氬氧流量比為1：1、 1：2、1：3、1：4及全氧時，XRD顯示所得薄膜為單斜AgO沿[002]方向成長，此AgO薄膜在100度及200度大氣下退火會形成(AgO+Ag2O)雙相位；而在300度大氣下退火後形成立方Ag2O，當退火溫度升至400度時則完全還原成Ag。XPS分析顯示當銀的氧化態減少時，Ag 3d 電子束縛能由367.9 eV增加至368.1 eV。具雙相結構(AgO+Ag2O)之AgO薄膜顯示為直接能隙，能隙為2.25 eV，單相Ag2O亦為直接能隙其能隙為2.35 eV。

Silver oxide thin films were deposited by reactive ion beam sputter deposition utilizing a capillaritron ion source (6 ~ 8 kV, 100 ~ 500 uA) and an anode layer ion source (0.7 kV, 13.5 mA). Both argon and oxygen were passed through the ion source simultaneously to act as sputtering and reactive gases, respectively. Experimental results show that only silver thin films were achieved utilizing the capillaritron ion sources, regardless of oxygen partial flow rates or deposition temperatures. This may due to the high kinetic energy of ejected particles that prevents the formation of silver oxide. Monoclinic AgO thin films were obtained utilizing the anode layer ion source with an argon/oxygen flow rate ratio of 1:1, 1:2, 1:3, 1:4 and full oxygen at room temperature. The monoclinic AgO thin film exhibits a preferred growth direction along the [002] direction. Annealing at 300C in air results in transformation to cubic Ag2O. High annealing temperature at 400C results in complete reduction to silver. And in an argon oxygen ratio of 1：1 and 1：2, there is coexistence AgO and Ag2O phase. XPS analysis show that as the oxidation state decreases, Ag 3d binding energy increases from 367.9 eV to 368.1 eV, which is characteristic of silver oxide. Both AgO(AgO+Ag2O) and Ag2O exhibit a direct band gap of 2.25 eV and 2.35 eV, respectively.

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