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研究生: 胡毓倫
YU-LUN-HU
論文名稱: 針對快閃記憶體型手機裝置的資料抹除方法
A Data Sanitization Method for Mobile Devices with NAND Flash Memory
指導教授: 吳晋賢
Chin-Hsien Wu
口試委員: 陳維美
Wei-Mei Chen
呂政修
Jenq-Shiou Leu
李春億
CHUN-YI LI
學位類別: 碩士
Master
系所名稱: 電資學院 - 電子工程系
Department of Electronic and Computer Engineering
論文出版年: 2018
畢業學年度: 106
語文別: 中文
論文頁數: 43
中文關鍵詞: 快閃記憶體快閃記憶體轉換曾資料刪除
外文關鍵詞: Flash Memory, Flash Translation Layer, Data Erasure
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隨著科技的發展,對於儲存系統上,NAND Flash Memory具有體積小、非揮發性、高抗震性、低功耗及快速儲存等優點,成為目前手機、行動電子裝置及攜帶型個人電腦的主要儲存設備。Flash Memory相較於傳統硬碟(Hard Disk Drive)來說,在資料抹除(Data Sanitization)方面有很大的不同,傳統硬碟可以針對讀寫的最小單位磁區(Sector)進行抹除的動作,而Flash Memory因為硬體上的限制,最小的抹除單位是區塊(Block),區塊是由最小的讀寫單位頁面(Page)所組成的。其中,資料刪除一直以來都是一個重要的問題,如何確保資料刪除,無法利用軟體方式或硬體方式復原資料,在傳統硬碟上利用複寫方式讓最小單位磁區達到抹除磁性,達到抹除資料的效果,但在Flash Memory上的讀寫與抹除機制與傳統硬碟並不相同,本文將探討,在傳統硬碟上的演算法是否適用於NAND Flash-memory,並且提出相對應適合NAND Flash-Memory的演算法。


Recently, NAND flash memory has been widely used in wearable mobile devices. Data erasure is one of most important issue in Wearable Mobile Devices, the instruction of deletion from file system is not able to delete data completely in NAND flash memory, it still can use data recovery software to recover data. In the thesis, first, we will introduce NAND Flash Memory, and then we will proposes an application with various algorithm and compare each algorithm. In the end, we will conclude an algorithm which can delete data completely in NAND flash memory.

第一章 緒論 1.1 前言 1.2 論文架構 第二章 環境背景和研究動機 2.1 NAND Flash Memory & Flash Translation Layer 2.1.1 位址轉換(Address Translation) 2.1.2 垃圾回收(Garbage Collection) 2.2 資料抹除方法 2.2.1 TRIM 指令 2.2.3 資料加密 2.3 傳統硬碟上常應用的刪除演算法 2.3.1 DoD 5220.22-M Data Wipe 2.3.2 Schneier Method 2.3.3 Gutmann Method 2.4 研究動機 第三章 研究方法 3.1. 整體架構(Overall Structure) 3.2適合NAND Flash Memory抹除演算法 3.3 資料抹除使用穿戴式應用程式 3.4 SDcard資料抹除比較方法 第四章 實驗與效能分析 4.1 實驗設計 4.2 實驗環境 4.3 實驗結果分析與討論 第五章 結論 第六章 參考文獻

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