本論文探討三個主題，一為光二極體式光電流偵測放大電路之模擬分析，一為光電流轉換之轉阻抗放大積體電路(Transimpedance Amplifier)實作，另一個是光閘極式之光偵測放大積體電路之實作。
第一部份針對光二極體式光電流偵測電路，設計光電流搭配電流鏡架構來偵測放大光電流，利用模擬來分析其特性。
第二部份為光電流轉換之轉阻抗放大積體電路之實作，利用0.35μm的CMOS製程實際製作光偵測轉阻抗放大積體電路，將接收下來的光電流直接轉換為電壓輸出，文中探討分析其增益與頻率特性。
第三部份為光閘極式之光偵測放大積體電路的實作，其作用為可在光轉換成電荷之後，暫存於本身位能井中，並可藉由位能井之深淺來做電荷移轉。
以上所涵蓋三個主題，皆有同一的特色，就是均可採用矽為材料來實現。利用不同的電路設計，不但進行模擬分析，而且以0.35μm的CMOS製程來實現，探討其增益與頻率特性。

This thesis studies three topics：the simulation of p-n diode type light-detection circuit using current mirror, the implementation of transimpedance amplifier using 0.35μm CMOS process, and the implementation of photogate type integrated circuit using 0.35μm CMOS process.
First, the simulation of light-detection circuit of the diode type is described. The application of current mirror structure to detect photocurrent is reviewed. Simulation results for 0.35μm CMOS process are discussed.
In the second part, the transimpedance amplifier employing current minors is studied. It is implemented using TSMC 0.35μm CMOS process.
In the last part, the fabrication of optical receiving circuit of the photogate type is described. After the light is converted into the electric charge, it can store the charge in the potential well temporarily. And, it can transfer the electric charge to distinguish the signal from the background light .
In the topics mentioned above, they have the same feature in the use of material, the silicon. Using different designs, we have not only simulate these circuits, but also implement them using 0.35μm CMOS process.

[1] Amelio, G. F. M. F. Tompsett and G. E. Smith, “Experimental verification of the charge-couple device concept,” Bell System Technical Journal, vol. 49, pp. 595-600, 1970.
[2] Streetman, B. G. and S. Banerjee著, 吳孟奇、洪勝富、連振炘、龔
正譯, “半導體元件” ,台北市,東華書局,民國90年.
[3] Soclof, S.著,黃明煌譯, “類比積體電路應用” ,全華科技圖書股
份有限公司,台北市,民國76年.
[4] Weckler, G. “Operation of p-n junction photodetectors in a photon
flux integrating mode,” IEEE Journal of Solid State Circuit, vol.
SC-2(3), pp. 65-73, Sep. 1967.
[5] Mendis, S. B. Pain, R. Nixon and E. R. Fossum, “Design of a low
light level image sensor with on-chip sigma-delta analog to digital
conversion,” Proc. of the SPIE, vol. 1900, Feb. 1993.
[6] Noble, P. “Self-scanned silicon image detector array,” IEEE Trans.
Electron Devices, vol. 15, pp. 202-209, 1968.
[7] Kawashima, M. F. Andoh, N. Murata, K. Tanaka, M. Yamawaki and
K. Taketoshi, “A 1/4 inch format 250,000 pixel amplifier MOS
image sensor using CMOS process,” IEEE IEDM, pp. 575-578, Jan., Dec. 1993.
[8] Sugawara, M. H. Kawashima, F. Andoh, N. Murata, Y. Fujita and
M. Yamawaki, “An amplified MOS imager suited for image
processing,” IEEE International Solid State Circuits Conference
Technical Digest, pp. 228-229, Jan., 1994.
[9] Kyomasu, M. “New MOS imager using photo-diode as current
source,” IEEE Journal of Solid Circuits, vol. 26, pp. 1116-1122,
1991.
[10] Mendis, S. S. Kemeny and E. R. Fossum, “A 128×128 CMOS
active pixel image sensor for highly integrated imaging systems,”
IEEE IEDM, pp. 583-586, 1993.
[11] Mendis, S. S. Kemeny and E. R. Fossum, “CMOS active pixel
image sensor,” IEEE Trans. Electron Devices, vol. 41, pp. 452-453,
U.S.A., Mar. 1994.
[12] Fossum, E. R. “CMOS imgae sensors : electronic amera-on-a-chip,”
IEEE Trans. Electron Devices, vol. 44(10), pp. 1689-1698, 1997.
[13]谷善平,新光電元件應用技術,第一章,台北縣,建興文化事業
有限公司, Jan. 2003.
[14] Sze, S. M. “Physics of semiconductor devices,” New York,
Wiley , 1981.
[15] Gadiri, A. Y. Savaria and B. Kaminska “An optimized cmos compatible photoreciver,” Electrical and Computer Engineering Canadian Conference, vol. 1, pp.211-214, Sep. 1995.
[16] HSPICE user’s manual , “Analysis and methods,” Meta-software.
[17] Melchior, H. “Photodetectors for optical communications systems,”
prceedings of the IEEE, vol. 58, No 10, Oct. 1970.
[18] Wang, C. and J. Wang, “Design of linear transimpedance amplifiers,”
ASIC, Proceedings. 4th International Conference on 23-25 pp.232- 235, Canada, Oct. 2001.
[19] Bulk, K. and A. H. Walling, “A class of analog CMOS circuits based
on the square-law characteristic of an MOS transistors in saturation,”
IEEE J. Solid-State Circuits, vol. Sc-22, pp. 357-365, 1987.
[20] Fossum, E. R.“CMOS image sensors-electronic camera on a chip,”
IEEE Electron Devices, vol.44, pp. 1689-1698, Oct. 1997.
[21] Miyagawa, R. and T. Kanade, “CCD-based range-finding sensor,”
IEEE Trans. Electron Devices, vol. 44, pp. 1648-1652, U.S.A., Oct. 1997.
[22] Ma, S.-Y. and L.-G. Chen, “A single-chip CMOS APS camera with
direct frame difference output,” IEEE J. Solid State Circuits, vol. 34,
pp. 1415-1418, Taiwan, Oct. 1999.
[23] Yamamoto, K. T. Hirai, K. Kagawa, M. Nunoshita, M. Yamada,
Y. Yamasaki, S. Sugishita, and K. Watanabe, “An Image Sensor wi-
th an In-Pixel Demodulation Function for Detecting the Intensity of
a Modulated Light Signal,” IEEE Trans. Electron Devices, vol. 50,
no. 1, Jan. 2003.