研究生: |
習顯恬 Siti Sulikhah |
---|---|
論文名稱: |
基於部分分佈反饋雷射且應用於 400-Gb/s 及以上速率光互連的先進高速光源 設計 Design of Advanced High-Speed Light Sources for 400-Gb/s and Above Optical Interconnects Based on Partially Corrugated Gratings DFB Lasers |
指導教授: |
李三良
San Liang Lee |
口試委員: |
曹恆偉
Hen-Wai Tsao 小口喜美夫 Kimio Oguchi 盧廷昌 Tien-Chang Lu 洪勇智 Yung-Jr Hung 詹裕恒 Yu-Heng Jan 鄭木海 Wood-Hi Cheng 葉秉慧 Pinghui Sophia Yeh |
學位類別: |
博士 Doctor |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2021 |
畢業學年度: | 109 |
語文別: | 英文 |
論文頁數: | 162 |
中文關鍵詞: | 直接调制激光器 、电吸收调制器 、部分光栅 、无源反馈激光器 、剩余刻面反射 、光互连 |
外文關鍵詞: | Directly modulated laser, Electro-absorption modulator, Partial grating, Passive feedback laser, Residual facet reflection, Optical interconnect |
相關次數: | 點閱:207 下載:0 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
采用部分波纹光栅 (PCG) 的高级高速 MQW 激光器
已成功开发400-Gb/s及以上的DFB结构
互连。具有 PCG 和无源反馈 (PCG-PFL) 的 DFB 激光器
在这里提出来克服以前计划的挑战性问题
具有超短腔的 DFB 激光器或具有无源的集成 DFB 激光器
波导反射器,其受制于较差的散热器和激光解理产率,
由于面反射和外部光反馈导致性能下降。
采用PCG结构,DFB激光器可以保持高单模产率(SMY)
即使在背面有高反射涂层和强烈的反射
集成无源部分。这提供了应用的稳健性
集成无源反射器以重塑调制响应或增强
通过使用光子-光子共振 (PPR) 效应获得 3-dB 带宽。经过
将 PCG-PFL 设计为具有 150-µm 长的激光部分,50-µm 长的无源
截面,以及 30% 的正面反射率,它可以有大约 86% 的 SMY,减少
强度调制响应中的共振峰,以及减少的波形
传输 56-Gbaud/s PAM-4 信号的过冲和下冲。通过使用
更长的无源反射器,增强的带宽 (>60-GHz) 可以通过以下方式实现
PPR 效应。
在这项工作中,我们还通过模拟验证了增强的免疫力
电吸收调制激光器 (EML) 的残余小面反射 (RFR)
在激光部分加入 PCG。用于超高数据速率调制的 EML
受 RFR 的影响,导致输出波形失真,特别是对于多级调制。原件的模式选择和设备性能
众所周知,EML 对刻面相位、光学反馈、
和/或面反射。与 PCG-DFB 结构一起,EML 可以保持
即使具有很强的调制器反射,也具有高 SMY 和出色的品质因数
从 EAM 部分。这提供了将 PCG-DFB 应用于
拉平强度调制响应或改善下的输出波形
大信号调制。通过将 PCG-EML 设计为具有 300 µm 长的激光
部分,175 微米长的光栅部分,100 微米长的调制器部分,以及 ≤10-3
正面反射率,激光可产生约97.3%的SMY,提高
平均 Q 值,降低调制响应中的低频降 (LFD),
增强的眼图张开度和减少的波形下冲/过冲
传输 56-Gbaud/s 或更高的 PAM-4 信号。通过选择最优
PCG-DFB 的光栅长度和应用非对称 QWS-DFB,
EML 可以在广泛的范围内保持良好的静态和动态性能
线性增益系数。
Advanced high-speed MQW lasers by partially corrugated gratings (PCG)
DFB structure have been successfully developed for 400-Gb/s and above
interconnections. The DFB lasers with PCG and passive feedback (PCG-PFL)
are proposed here to overcome the challenging issues for the former schemes of
DFB lasers with ultrashort cavities or integrated DFB lasers with passive
waveguide reflectors, which suffers from poor heatsink and laser cleavage yield,
performance degradation due to the facet reflection and external optical feedback.
With PCG structure, the DFB lasers can maintain high single-mode yield (SMY)
even with a high-reflection-coating on the rear facet and strong reflection from
the integrated passive section. This provides the robustness in applying the
integrated passive reflector to reshape the modulation response or to enhance the
3-dB bandwidth by using the photon-photon resonance (PPR) effect. By
designing the PCG-PFL to have 150-µm long laser section, 50-µm long passive
section, and 30% front-facet reflectivity, it can have about 86% of SMY, reduced
resonant peak in the intensity modulation response, and reduced waveform
overshoot and undershoot for transmitting 56-Gbaud/s PAM-4 signals. By using
a longer passive reflector, enhanced bandwidth (>60-GHz) can be achieved by
the PPR effect.
In this work, we also verified by simulation the enhanced immunity to
residual facet reflection (RFR) for electroabsorption modulated lasers (EMLs) by
incorporating PCG in the laser section. EMLs for ultra-high data rate modulation
is subject to the RFR that causes output waveform distortion, especially for multi-level modulation. The mode selection and device performance of an original
EML is well known to be very sensitive to the facet phases, optical feedback,
and/or facet reflections. Along with PCG-DFB structure, the EMLs can maintain
high SMY and an excellent quality factor even with a strong modulator reflection
from EAM section. This provides the robustness in applying the PCG-DFB to
flatten intensity modulation response or to improve the output waveform under
large signal modulation. By scheming PCG-EML to have 300-µm long laser
section, 175-µm long grating section, 100-µm long modulator section, and ≤10-3
front-facet reflectivity, the laser can produce about 97.3% SMY, improved
average Q-value, reduced low frequency drop (LFD) in the modulation response,
enhanced eye-opening, and reduced waveform undershoot/overshoot for
transmitting 56-Gbaud/s or beyond PAM-4 signals. By choosing the optimal
grating length for the PCG-DFB and applying an asymmetric QWS-DFB, the
EMLs can maintain good static- and dynamic performances over a wide range of
the linear gain coefficients.
[1] C. Urricariet, "Trends in 400G optics for the data center," in Proc. NANOG
Conf., San Francisco, CA, USA, 2019, pp. 1-22.
[2] F. Zhu, Y. Wen, and Y. Bai, "Component BW requirement of 56Gbaud
modulations for 400GbE 2 & 10 km PMD," in Proc. IEEE 802.3bs 400GbE
Task Force Plenary Meeting, San Diego, CA, USA, 2014, pp. 1-13.
[3] J. Wei, Q. Cheng, R. V. Penty, I. H. White, and D. G. Cunningham, “400
Gigabit Ethernet using advanced modulation formats: Performance,
complexity, and power dissipation”, IEEE Comm. Magazine, vol. 53, no. 2,
pp. 182-189, Feb. 2015.
[4] D. Sadot, G. Dorman, A. Gorshtein, E. Sonkin, and O. Vidal, “Single channel
112Gbit/sec Pam4 at 56Gbaud with digital signal processing for data centers
applications”, Proc. OFC, Los Angeles, CA, USA, 2015, Art. no. Th2A.67.
[5] J. Wei, S. Calabro, T. Rahman, and N. Stojanovic, “System aspects of the
next-generation data-center networks based on 200G per lambda IMDD
links”, Proc. SPIE OPTO, San Francisco, CA, USA, 2020, Art. no. 1130805.
[6] K. Naoe, T. Nakajima, Y. Nakai, Y. Yamaguchi, Y. Sakuma, and N. Sasada,
“Advanced InP laser technologies for 400G and beyond hyperscale
interconnections,” in Proc. SPIE Photon. Europe Conf., 2020, Art. no.
1135604.
[7] S. Yamauchi, K. Adachi, H. Asakura, H. Takita, Y. Nakai, Y. Yamaguchi, M.
Mitaki, R. Nakajima, S. Tanaka, and K. Naoe, “224-Gb/s PAM4 uncooled
operation of lumped-electrode EA-DFB lasers with 2-km transmission for
800GbE application,” in Proc. OFC, 2021, Art. no. Tu1D.1.
[8] N. Sasada, T. Nakajima, Y. Sekino, A. Nakanishi, M. Mukaikubo, M. Ebisu,
M. Mitaki, S. Hayakawa, and K. Naoe, “Wide-temperature-range (25–80 °C)
53-Gbaud PAM4 (106 Gb/s) operation of 1.3-μm directly modulated DFB
lasers for 10-km transmission,” J. Lightw. Technol., vol. 37, no. 7, pp. 1686–
1689, Apr. 2019.
[9] A. Laakso and M. Dumitrescu, “Modified rate equation model including the
photon-photon resonance,” in Proc.NUSOD, Atlanta, Georgia, USA, 2010,
Art. no. ThB3.
[10] O. Ozolins, X. Pang, M. I. Olmedo, A. Kakkar, A. Udalcovs, S. Gaiarin, J.
R. Navarro, K. M. Engenhardt, T. Asyngier, R. Schatz, J. Li, F. Nordwall, U.
Westergren, D. Zibar, S. Popov, and G. Jacobsen, “100 GHz externally
modulated laser for optical interconnects,” J. Lightw. Technol., vol. 35, no.
6, pp. 1174-1179, Jan. 2017.
[11] Y. Cheng, Q. J. Wang, and J. Pan, “1.55 μm high speed low chirp
electroabsortion modulated laser arrays based on SAG scheme,” Opt. Exp.,
vol. 22, no. 25, pp. 31286-31292, 2014.
[12] Y. Huang, T. Okuda, K. Shiba, and T. Torikai, “High-yield external optical
feedback resistant partially-corrugated-waveguide laser diodes,” in Proc.
IEEE 16th Int. Semicond. Laser Conf., Nara, Japan, 1998, Art. no. TuE44.
[13] M. Gotoda, T. Nishimura, K. Matsumoto, T. Aoyagi, and K. Yoshiara,
“Highly external optical feedback tolerant 1.49 μm single-mode lasers with
partially corrugated gratings,” in Proc. IEEE 21st Int. Semicond. Laser Conf.,
Sorrento, Italy, 2008, Art. no. MB8.
[14] K. Zhong, X. Zhou, T. Gui, L. Tao, Y. Gao, W. Chen, J. Man, L. Zeng, A. P.
T. Lau, and C. Lu, “Experimental study of PAM-4, CAP-16, and DMT for
100 Gb/s short reach optical transmission systems,” Opt. Exp., vol. 23, no.
2, pp. 1176–1189, 2015.
[15] Y. Huang, T. Okuda, K. Shiba, Y. Muroya, N. Suzuki, and K. Kobayashi,
“External optical feedback resistant 2,5-Gb/s transmission of partially
corrugated waveguide laser diodes over a −40 °C to 80 °C temperature
range,” IEEE Photon. Technol. Lett., vol. 11, no. 11, pp. 1482–1484, 1999.
[16] P. D. Pukhrambam, S. L. Lee, and G. Keiser, “Electroabsorption modulated
lasers with immunity to residual facet reflection by using lasers with partially
corrugated gratings,” IEEE Photon. J., vol. 9, no. 2, Apr. 2017, Art. no.
7101016.
[17] N. H. Zhu, Z. Shi, Z. K. Zhang, Y. M. Zhang, C. W. Zou, Z. P. Zhao, Y. Liu,
W. Li, and M. Li, , “Directly modulated semiconductor lasers,” IEEE J. Sel.
Topics Quantum Electron., vol. 24, no. 1, pp. 1–19, Jan./Feb. 2017.
[18] E. K. Lau, X. Zhao, H. K. Sung, D. Parekh, C. C. Hasnain, and M. C. Wu,
“Strong optical injection-locked semiconductor lasers demonstrating >100-
GHz resonance frequencies and 80-GHz intrinsic bandwidths,” Opt. Exp.,
vol. 16, no. 9, pp. 6609–6618, 2008.
[19] O. Kjebon, R. Schatz, S. Lourdudoss, S. Nilsson, B. Stalnacke, and L.
Backbom, “30 GHz direct modulation bandwidth in detuned loaded InGaAsP
DBR lasers at 1.55 μm wavelength,” Electron. Lett., vol. 33, no. 6, pp. 486–
489, Mar. 1997.
[20] Y. Matsui, R. Schatz, T. Pham, W. A. Ling, G. Carey, H. M. Daghighian, D.
Adams, T. Sudo, and C. Roxlo, “55 GHz bandwidth distributed reflector
laser,” J. Lightw. Technol., vol. 35, no. 3, pp. 397–403, Feb. 2017.
[21] G. Liu, G. Zhao, J. Sun, D. Gao, Q. Lu, and W. Guo, “Experimental
demonstration of DFB lasers with active distributed reflector,” Opt. Exp.,
vol. 26, no. 23, pp. 29784–29795, 2018.
[22] K. Otsubo, M. Matsuda, K. Takada, S. Okumura, A. Uetake, M. Ekawa, and
T. Yamomoto, “AlGaInAs quantum-well lasers with semi-insulating buriedheterostructure for high-speed direct modulation up to 40 Gbps,” in Proc.
SPIE-OSA-IEEE Asia Comm. Photon., Shanghai, China, 2009, Art. no.
76311Q.
[23] J. Kreissl, V. Vercesi, U. Troppenz, T. Gaertner, W. Wenisch, and M. Schell,
“Up to 40 Gb/s directly modulated laser operating at low driving current:
Buried-heterostructure passive feedback laser (BH-PFL),” IEEE Photon.
Technol. Lett., vol. 24, no. 5, pp. 362–364, Mar. 2012
[24] M. Radziunas, A. Glitzky, U. Bandelow, M. Wolfrum, U. Troppenz, J.
Kreissl, and W. Rehbein, “Improving the modulation bandwidth in
semiconductor lasers by passive feedback,” IEEE J. Sel. Topics Quantum
Electron., vol. 13, no. 1, pp. 136–142, Jan./Feb. 2007.
[25] O. V. Ushakov, S. Bauer, O. Brox, H. J. J. Wunsche, and F. Henneberger,
“Dynamics of lasers with ultrashort optical feedback,” in Proc. Integrate.
Optolectron. Dev., 2004, Art. no. 5349.
[26] G. Morthier, A. Abbasi, J. Verbist, S. Keyvaninia, X. Yin, F. Lelarge, G. H.
Duan, J. Bauwelinck, and G. Roelkens, “High-speed directly modulated
heterogeneously integrated Inp/Si DFB laser,” in Proc. ECOC, Düsseldorf,
Germany, 2016, Art. no. M.2.E.1.
[27] J. Li, J. Zheng, T. Pu, Y. Zhang, Y. Shi, X. Zhang, Y. Li, X. Meng, and X.
Chen, “Monolithically integrated multi-section semiconductor lasers:
Towards the future of integrated microwave photonics,” Inter. J. Light Elect.
Optic., vol. 226, no. 165724, pp. 1–29, 2020.
[28] N. P. Diamantopoulos, H. Yamazaki, S. Yamaoka, M. Nagatani, H. Nishi, H.
Tanobe, R. Nakao, T. Fujii, K. Takeda, T. Kakitsuka, H. Wakita, M. Ida, H.
Nosaka, F. Koyama, Y. Miyamoto, and S. Matsuo, “>100-GHz bandwidth
directly-modulated lasers and adaptive entropy loading for energy-efficient
>300-Gbps/λ IM/DD systems,” J. Lightw. Technol., vol. 39, no. 3, pp. 771–
778, Feb. 2021.
[29] T. Nakajima, M. Onga, Y. Sekino, A. Nakanishi, N. Sasada, S. Hayakawa, S.
Hamada, and K. Naoe, “106-Gb/s PAM4 operation of directly modulated
DFB lasers from 25 to 70ºC for transmission over 2-km in the CWDM
range,” in Proc. OFC, 2021, Art. no. Tu1D.4.
[30] S. A. Blokhin, J. A. Lott, A. Mutig, G. Fiol, N. N. Ledentsov, M. V. Maximov,
A. Nadtochiy, V. Shchukin, and D. Bimberg, “Oxide-confined 850 nm
VCSELs operating at bit rates up to 40 Gbit/s,” Electron. Lett., vol. 45, no.
10, pp. 501–503, May 2009.
[31] L. Xie, J. W. Man, B. J. Wang, Y. Liu, X. Wang, H. Q. Yuan, L. J. Zhao, H.
L. Zhu, N. H. Zhu, and W. Wang, “24-GHz directly modulated DFB laser
modules for analog applications,” IEEE Photon. Technol. Lett., vol. 24, no.
5, pp. 407–409, Dec. 2012.
[32] T. Fukamachi, A. Nakamura, Y. Sakuma, S. Hayakawa, R. Washino, M.
Mukaikubo, K. Okamoto, T. Nakajima, K. Motoda, K. Naoe, K. Nakahara,
Y. Wakayama, and K. Uomi, “Uncooled clear-eye-opening- operation (25 to
95°C) of 25.8/28-Gbps 1.3-μm directly modulated DFB lasers,” in Proc.
Optic. Fiber Comm. Conf., San Francisco, CA, USA, 2014, Art. no. Th3A.7.
[33] K. Nakahara, Y. Wakayama, T. Kitatani, T. Taniguchi, T. Fukamachi, Y.
Sakuma, and S. Tanaka, “Direct modulation at 56 and 50 Gb/s of 1.3- μm
InGaAlAs ridge-shaped-BH DFB lasers,” IEEE Photon. Technol. Lett., vol.
27, no. 5, pp. 534-536, Mar. 2015.
[34] Y. Matsui, T. Pham, T. Sudo, G. Carey, B. Young, J. Xu, C. Cole, and C.
Roxlo, “28-Gbaud PAM4 and 56-Gb/s NRZ performance comparison using
1310-nm Al-BH DFB laser,” J. Lightw. Technol., vol. 34, no. 11, pp. 2677-
2683, Jun. 2016.
[35] P. P. Baveja, M. Li, D. Wang, Y. Y. Liang, Y. Chen, D. M. Dorsey, H. Zhang,
and J. Zheng, “Impact of laser dynamics on 56 Gbps PAM-4 modulation of
25G class, 1310 nm, directly modulated lasers,” in Proc. IEEE Photon.
Conf., Orlando, Florida, 2017, pp. 475-476.
[36] S. Sulikhah, S. L. Lee, and H. W. Tsao, “Improvement on direct modulation
responses and stability by partially corrugated gratings based DFB lasers
with passive feedback,” IEEE Photon. J., vol. 13, no. 1, Feb. 2021, Art. no.
4900214.
[37] T. Fujisawa, T. Itoh, S. Kanazawa, K. Takahata, Y. Ueda, R. Iga, H. Sanjo, T.
Yamanaka, M. Kotoku, and H. Ishii, “Ultracompact 160-Gbit/s transmitter
optical subassembly based on 40-Gbit/s× 4 monolithically integrated light
source,” Opt. Exp., vol. 21, no. 1, pp. 182–189, 2013.
[38] M. Shirao, K. Kojima, and H. Itamoto, “53.2 Gb/s NRZ transmission over
10 km using high speed EML for 400 GbE,” in Proc. Opto-Electron.
Commun. Conf., Shanghai, China, 2015, Art. no. JThC.22.
[39] W. Kobayashi, T. Yamanaka, M. Arai, N. Fujiwara, T. Fujisawa, K. Tsuzuki,
T. Ito, Y. Kondo, and F. Kano, “40-Gbit/s, uncooled (-15 to 80°C) operation
of a 1.55-μm, InGaAlAs, electroabsorption modulated laser for very short
reach applications,” in Proc. IEEE Inter. Conf. Ind. Phosp. Rel. Mat.,
Newport Beach, CA, USA, 2009, Art. no. ThB1.2.
[40] Y. Nakai, A. Nakanishi, Y. Yamaguchi, S. Yamauchi, A. Nakamura, H.
Asakura, H. Takita, S. Hayakawa, M. Mitaki, Y. Sakuma, and K. Naoe,
“Uncooled operation of 53-GBd PAM4 (106-Gb/s) EA/DFB lasers with
extremely low drive voltage with 0.9 Vpp,” J. Lightw. Technol., vol. 37, no.
7, pp. 1658-1662, Apr. 2019.
[41] C. Lam, X. Zhou, and H. Liu, “200G per lane for beyond 400GbE,” in Proc.
IEEE 802.3 NEA Meeting, 2020, pp. 1-20.
[42] O. K. Kwon, Y. S. Baek, and Y. C. Chung, “Electroabsorption modulated
laser with high immunity to residual facet reflection,” IEEE J. Quantum
Electron., vol. 48, no. 9, pp. 1203-1213, Sep. 2012.
[43] N. Ohata, M. Shirao, Y. Kawamoto, T. Murao, M. Binkai, H. Sano, and K.
Hasegawa, “High-speed optical devices and packaging techniques for data
centers,” in Proc. SPIE OPTO, San Francisco, CA, USA, 2020, Art. no.
1130807.
[44] A. Abbasi, B. Moeneclaey, J. Verbist, X. Yin, J. Bauwelinck, G. H. Duan, G.
Roelkens, and G. Morthier, “Direct and electroabsorption modulation of a
III-V-on-Silicon DFB laser at 56 Gb/s,” IEEE J. Sel. Topics Quantum
Electron., vol. 23, no. 6, Nov.-Dec. 2017, Art. no. 1501307.
[45] Z. Ahmad, R. L. Chao, Y. J. Hung, J. Chen, C. C. Wei, and J. W. Shi, “Highspeed electro-absorption modulated laser at 1.3 µm wavelength based on
selective area growth technique,” in Proc. IPC, San Antonio, TX, USA,
2019, pp. 1-2.
[46] M. S. B. Hossain, J. Wei, F. Pittala, N. Stojanovic, S. Calabro, T. Rahman,
G. Bocherer, T. Wettlin, C. Xie, M. Kuschnerov, and S. Pachnicke, “402 Gb/s
PAM-8 IM/DD O-band EML transmission,” in Proc. ECOC, Bordeaux,
France, 2021, Art. no. We1C1.4.
[47] M. Radziunas, U. Troppenz, and J. Kreissl, "Tailoring single-mode DFB
laser with integrated passive feedback section for direct modulation
applications," in Proc. CLEOE-IQEC, Munich, Germany, 2007, Art. no.
9807037.
[48] J. Ohtsubo, Semiconductor Lasers, 1st ed., Verlag, Berlin: Springer, 2017.
[49] J. L. Beylat and J. Jacquet, “Analysis of DFB semiconductor lasers with
external optical feedback,” Electron. Lett., vol. 24, no. 9, pp. 509–510, May
1988.
[50] M. F. Alam, M. A. Karim, and S. Islam, “Analysis of external optical
feedback characteristics of asymmetric, quarter-wave-shifted, distributedfeedback semiconductor lasers,” App. Opt., vol. 36, no. 18, pp. 4131–4137,
1997.
[51] O. Brox, S. Bauer, M. Radziunas, M. Wolfrum, J. Sieber, J. Kreissl, B.
Sartorius, and H. J. Wunsche, “High-frequency pulsations in DFB lasers with
amplified feedback,” IEEE J. Quantum Electron., vol. 39, no. 11, pp. 1381–
1387, Nov. 2003.
[52] Y. Xu and X. Wang, "Considerations on 200GE SMF wavelength choice for
10km," in Proc. IEEE 802.3bs Task Force Meeting, Whistler, Canada, 2016,
pp. 1-16.
[53] B. K. Saravanan, Frequency chirping properties of electroabsorption
modulators integrated with laser diodes, Doctoral dissertation, Universitat
Ulm, 2006.
[54] L. A. Coldren, S. W. Corzine, and M. L. Masanovic, Diode Laser and
Photonics Integrated Circuits, 2nd ed., Hoboken, NJ, USA: Wiley, 2012.
[55] K. J. Ebeling, Integrated Optoelectronics, Waveguide Optics, Photonics,
Semiconductors, Verlag, Berlin: Springer, 1993.
[56] G. Ghione, Semiconductor Devices for High-Speed Optoelectronics,
Cambridge, UK: Cambridge University Press, 2009.
[57] A. A. Amusan, Simulation of traveling wave electro-absorption modulators
suitable for 100Gbps, Master thesis, KTH Information and Communication
Technology, 2011.
[58] J. J. S. Huang, Y. H. Jan, D. Yu, R. Chang, J. Chang, G. Shiu, D. Ren, K.
Wang, and E. Chou, “Manufacturing excellence and future challenges of
wireless laser componets for 4G/5G optical mobile fronthaul networks,” in
Proc. WOCC, Hualien, Taiwan, 2018, pp. 166-167.
[59] W. Kobayashi, M. Arai, T. Yamanaka, N. Fujiwara,, T. Tadokoro, K. Tsuzuki,
Y. Kondo, and F. Kano, “Design and fabrication of 10-/40-Gb/s, uncooled
electroabsorption modulator integrated DFB laser with butt-joint structure,”
J. Lightw. Technol., vol. 28, no. 1, pp. 164-171, Jan. 2010.
[60] H. G. Shiraz, Distributed Feedback Laser Diodes and Optical Tunable
Filters, Southern Gate, Chichester, England: Wiley, 2003.
[61] M. Aoki, S. Takashima, Y. Fujiwara, and S. Aoki, “New transmission
simulation of EA-moudator integrated DFB-lasers considering the facet
reflection-induced chirp,” IEEE Photon. Technol. Lett., vol. 9, no. 3, pp. 380-
382, Mar. 1997.
[62] C. Sun, B. Xiong, J. Wang, P. Cai, J. Xu, Q. Zhou, and Y. Luo, “Influence of
residual facet reflection on the eye-diagram performance of high-speed
electroabsorption modulated lasers,” J. Lightw. Technol., vol. 27, no. 15, pp.
2970-2976, Aug. 2009.
[63] S. Sulikhah, S. L. Lee, J. Chang, D. Ren, E. Chou, Y. H. Jan, and H. W. Tsao,
"Demonstration of improved immunity to residual facet reflection for
uncooled EMLs with partially corrugated grating," in Proc. Optoelect.
Comm. Conf., Taipei, Taiwan, 2020, Art. no. T45.1.
[64] P. D. Pukhrambam and S. L. Lee, “Highly residual facet reflection immune
electro-absorption modulated laser with short partially corrugated gratings,”
in Proc. ISLC, Kobe, Japan, 2016, Art. no. WE21.
[65] Y. Zhang, L. Li, Y. Zhou, G. Zhao, Y. Shi, J. Zheng, Z. Zhang, Y. Liu, L. Zou,
Y. Zhou, Y. Du, and X. Chen, “Modulation properties enhancement in a
monolithic integrated two-section DFB laser utilizing side-mode injection
locking method,” Opt. Exp., vol. 25, no. 22, pp. 27595-27608, 2017.
[66] H. Bissessur, “Effects of hole burning, carrier-induced losses and the carrierdependent differential gain on the static characteristics of DFB lasers,” J.
Lightw. Technol., vol. 10, no. 11, pp. 1617-1630, Nov. 1992.
[67] P. J. Walraven, Design of grating structures to reduce longitudinal spatial
hole burning in distributed feedback lasers, Master thesis, Eindhoven
University of Technology, 1995.
[68] M. Okai, “Spectral characteristics of distributed feedback semiconductor
lasers and their improvements by corrugation-pitch-modulated structure,” J.
App. Physics, vol. 75, no. 1, pp. 1-29, Jan. 1994.
[69] P. Vankwikelberge, G. Morthier, and R. Baets, “CLADISS-a longitudinal
multimode model for the analysis of the static, dynamic, and stochastic
behavior of diode lasers with distributed feedback,” IEEE J. Quantum
Electron., vol. 26, no. 10, pp. 1728-1741, Oct. 1990.
[70] M. Peschke, P. Gerlach, B. K. Saravanan, and B. Stegmueller, “Thermal
crosstalk in integrated laser-modulators,” IEEE Photon. Technol. Lett., vol.
16, no. 11, pp. 2508-2510, Nov. 2004.
[71] M. Nakamura, K. Aiki, J. Umeda, and A. Yariv, “CW operation of
distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300
K,” App. Phys. Lett., vol. 27, pp. 403-405, 1975.
[72] M. Geert and V. Patrick, Handbook of Distributed Feedback Laser Diodes,
2nd ed., Norwood: Artech House Inc., 2013.
[73] J. Zheng, N. Song, Y. Zhang, Y. Shi, S. Tang, L. Li, R. Guo, and X. Chen,
“An equivalent-asymmetric coupling coefficient DFB laser with high output
efficiency and stable single longitudinal mode operation,” IEEE Photon. J.,
vol. 6, no. 6, Dec. 2014, Art. no. 1502809.
[74] F. Favre, “Design of asymmetric quarter-wave-shifted DFB semiconductor
lasers,” Electron. Lett., vol. 22, no. 21, pp. 1113-1114, Oct. 1986.
[75] Y. Huang, H. Yamada, T. Okuda, T. Torikai, and T. Uji, “External optical
feedback resistant characteristics in partially-corrugated-waveguide laser
diodes,” in Proc. OFC, San Jose, CA, USA, 1996, Art. no. TuH1.
[76] H. Yamada, K. Shiba, T. Okuda, Y. Huang, and T. Torikai, “External optical
feedback resistant 622 Mbit/s modulation from -40ºC to +85ºC using
partially corrugated laser diodes,” in Proc. OFC, Dallas, TX, USA, 1997,
Art. no. ThR1.
[77] Y. Huang, T. Okuda, K. Shiba, and T. Torikai, “Dynamic analysis on external
optical feedback resistant characteristics in partially-corrugated-waveguide
laser diodes,” in Proc. Photonics China, Beijing, China, 1998, pp. 16-23.
[78] T. Okuda, Y. Huang, K. Sato, and Y. Muroya, “Simulation and grating design
of DFB-LDs for metropolitan area and access networks and their
characteristics,” in Proc. Inter. Sym. Optic. Science Technol., San Diego, CA,
USA, 2000, pp. 24-31.
[79] S. Sulikhah, H. W. Tsao, and S. L. Lee, "Enhancement of modulation
responses of directly modulated lasers with passive feedback and partially
corrugated grating," in Proc. 24th Microoptics Conf., Toyama, Japan, 2019,
Art. no. G-3.
[80] C. Bornholdt, U. Troppenz, J. Kreissl, W. Rehbein, B. Sartorius, M. Schell,
and I. Woods, “40 Gbit/s directly modulated passive feedback DFB laser for
transmission over 320 km single mode fibre,” in Proc. 34th ECOC, Brussels,
Belgium, 2008, Art. no. Tu.1.D.6.
[81] Y. Matsui, H. Murai, S. Arahira, Y. Ogawa, and A. Suzuki, “Novel design
scheme for high-speed MQW lasers with enhanced differential gain and
reduced carrier transport effect,” IEEE J. Quantum Electron., vol. 34, no. 12,
pp. 2340–2349, Dec. 1998.
[82] J. J. S. Huang, Y. H. Jan, D. Ren, Y. C. Hsu, P. Sung, and E. Chou, “Defect
diffusion model of InGaAs/InP semiconductor laser degradation,” App.
Physics Research, vol. 8, no. 1, pp. 149-157, Jan. 2016.
[83] J. J. S. Huang, Y. H. Jan, J. Chang, Y. C. Hsu, D. Ren, E. Chou, “Swift
reliability test methodology of 100G high-speed, energy-efficient electroabsorption modulated lasers (EML) for green datacenter networks,”
RedFame, vol. 3, no. 1, pp. 74-80, Aug. 2016.
[84] J. J. S. Huang, Y. H. Jan, H. S. Chang, J. Chang, R. Chang, G. Liu, H. S.
Chen, A. Chen, D. Ren, and E. Chou, “ESD polarity effect study of
monolithic, integrated DFB-EAM EML for 100/400G optical networks,” in
Proc. CLEO-PR, Singapore, 2017, Art. no. s1018.
[85] F. Favre, “Theoretical analysis of external optical feedback on DFB
semiconductor lasers,” IEEE J. Quantum Electron., vol. QE-23, no. 1, pp.
81-88, Jan. 1987.
[86] F. Favre, “Sensitivity to external feedback for gain-coupled DFB
semiconductor lasers,” Electron. Lett., vol. 27, no. 5, pp. 433-435, Feb. 1991.
[87] Y. Yoshikuni, H. Kawaguchi, and T. Ikegami, “Intensity fluctuation of 1.5
µm InGaAsP/InP distributed feedback lasers involving the optical feedback
effect,” IEE Proc. J, Optoelectron., vol. 132, no. 1, pp. 20-27, Feb. 1985.
[88] J. L. Beylat and J. Jacquet, “Analysis of DFB semiconductor lasers with
external optical feedback,” Electron. Lett., vol. 24, no. 9, pp. 509-510, Apr.
1988.
[89] N. Schunk and K. Petermann, “Numerical analysis of the feedback regimes
for a single-mode semiconductor laser with external feedback,” IEEE J.
Quantum Electron., vol. 24, no. 7, pp. 1242-1247, Jul. 1988.
[90] T. Kurosaki, T. Katayama, and H. Kawaguchi, “Numerical study of a highly
optical-feedback tolerant DFB laser with an absorber and a rear reflector
using transfer matrixes and rate equations,” IEICE Electron. Exp., vol. 14,
no. 11, pp. 1-12, May 2017.
[91] J. Zheng, J. Li, T. Pu, Y. Zhang, Y. Shi, X. Zhang, X. Meng, and X. Chen,
“Monolithically integrated multi-section semiconductor lasers: towards the
future of integrated microwave photonics,” in Proc. SPIE/COS Photonics
Asia, 2020, Art. no. 1155504.
[92] U. Troppenz, J. Kreissl, M. Mohrle, C. Bornholdt, W. Rehbein, B. Sartorius,
I. Woods, and M. Schell, “40 Gbit/s directly modulated lasers: Physics and
application,” in Proc. SPIE OPTO Conf., San Francisco, CA, USA, 2011,
Art. no. 79530F.
[93] C. Sun, B. Xiong, J. Wang, P. Cai, J. Xu, J. Huang, H. Yuan, Q. Zhou, and Y.
Luo, “Fabrication and packaging of 40-Gb/s AlGaInAs multiple-quantumwell electroabsorption modulated lasers based on identical epitaxial layer
scheme,” J. Lightw. Technol., vol. 26, no. 11, pp. 1464-1471, Jun. 2008.
[94] P. Brosson and H. Bissessur, “Analytical expressions for the FM and AM
responses of an integrated laser-modulator,” IEEE J. Sel. Topics Quantum
Electron., vol. 2, no. 2, pp. 336-340, Jun. 1996.
[95] I. P. Kaminow, G. Eisenstein, and L. W. Stulz, “Measurement of the modal
reflectivity of an antireflection coating on a superluminescent diode,” IEEE
J. Quantum Electron., vol. QE-19, no. 4, pp. 493-495, Apr. 1983.
[96] VPIcomponentMaker 10.0 Photonic Circuit User’s Manual. Somerset, NJ,
USA: VPIsystems Inc., 2019.
[97] Y. Li, W. Zhou, Y. W. Chen, Y. Chen, Y. Huang, K. Li, J. Yu, and G. K. Chang,
“Optical comb generator with flat-topped spectral response using one
electroabsorption-modulated laser and one phase modulator,” Optical
Engineering, vol. 59, no. 1, Jan. 2020, Art. no. 016112.
[98] J. Declercq, H. Li, J. V. Kerrebrouck, M. Verplaetse, H. Ramon, L. Bogaert,
J. Lambrecht, C. Y. Wu, L. Breyne, O. Caytan, S. Lemey, J. Bauwelinck, X.
Yin, P. Ossieur, P. Demeester, and G. Torfs, “Low power all-digital radioover-fiber transmission for 28-GHz band using parallel electro-absorption
modulators,” J. Lightw. Technol., vol. 39, no. 4, pp. 1125-1131, Oct. 2020.
[99] Y. Bao, W. Lin, J. Fu, T. Gui, L. Yang, Z. Li, and B. O. Guan, “50Gbps DDOOFDM transmission after 80km without DCF based on an electro-absorption
modulator,” in Proc. ICOCN, Guangzhou, China, 2011, Art. no. NU21.
[100] I. Koltchanov, A. Richter, E. Myslivets, and C. Kazmierski, “Complete time
and frequency-dependent modeling of electro-absorption modulators,” in
Proc. OFC/NFOEC, Anaheim, CA, USA, 2005, Art. no. OME42.
[101] A. Lowery, O. Lenzmann, I. Koltchanov, R. Moosburger, R. Freund, A.
Richter, S. Georgi, D. Breuer, and H. Hamster, “Multiple signal
representation simulation of photonic devices, systems, and networks,” IEEE
J. Sel. Topics Quantum Electron., vol. 6, no. 2, pp. 282–296, Mar./Apr. 2000.
[102] G. Morthier and B. Moeyersoon, “Intensity noise and linewidth of laser
diodes with integrated semiconductor optical amplifier,” IEEE Photon.
Technol. Lett., vol. 14, no. 12, pp. 1644–1646, Dec. 2002.
[103] W. Zhao, Y. Mao, D. Lu, Y. Huang, L. Zhao, Q. Kan, and W. Mang,
“Modulation bandwidth enhancement of monolithically integrated mutually
coupled distributed feedback laser,” App. Sci., vol. 10, no. 4375, pp. 1–13,
2020.
[104] A. J. Lowery, “New dynamic multimode model for external cavity
semiconductor lasers,” IEE Proc. J. Optoelectron., vol. 136, no. 4, pp. 229–
237, 1989.
[105] L. Hairong and H. G. Shiraz, “Applications of the transmission line laser
model in analysis of multiple-phase-shift DFB lasers,” Microw. Opt. Technol.
Lett., vol. 40, no. 1, pp. 51–57, 2004.
[106] P. D. Pukhrambam, Electro-absorption modulated lasers with high immunity
to residual facet reflection by using lasers with partially corrugated gratings,
Doctoral dissertation, National Taiwan University of Science and
Technology, 2017.
[107] Y. P. Xi, W. P. Huang, and X. Li, “High-order split-step schemes for timedependent coupled-wave equations,” IEEE J. Quantum Electron., vol. 43,
no. 5, pp. 419-425, May 2007.
[108] B. S. Kim, Y. Chung, and J. S. Lee, “An efficient split-step time-domain
dynamic modeling of DFB/DBR laser diodes,” IEEE J. Quantum Electron.,
vol. 36, no. 7, pp. 787-794, Jul. 2000.
[109] W. Rideout, W. F. Sharfin, E. S. Koteles, M. O. Vassell, and B. Elman, “Wellbarrier hole burning in quantum well lasers,” IEEE Photon. Tech. Lett., vol.
3, no. 9, pp. 784-786, 1991.
[110] R. Nagarajan, T. Fukushima, S. W. Corzine, and J. E. Bowers, “Effects of
carrier transport on high-speed quantum well lasers,” App. Phys. Lett., vol.
59, pp. 1835-1837, 1991.
[111] K. Petermann, Laser Diode Modulation and Noise, Dordrecht: Kluwer
Academic Publishers, 1988.
[112] A. J. Lowery, “Amplified spontaneous emission in semiconductor laser
amplifiers: the validity of the transmission-line laser model,” IEE Proc. J.
Optoelectron., vol. 137, pp. 241-247, 1990.
[113] C. H. Henty, “Theory of spontaneous emission noise in open resonators and
its application to lasers and optical amplifiers,” J. Lightw. Technol., vol. 4,
no. 3, pp. 288-297, Mar. 1986.
[114] M. Osinski and J. Buus, “Linewidth broadening factor in semiconductor
lasers – an overview,” IEEE J. Quantum Electron., vol. 23, no. 1, pp. 9-29,
Jan. 1987.
[115] E. E. Fiky, M. Chagnon, M. Sowailem, A. Samani, M. M. Osman, and D. V.
Plant, “168-Gb/s single carrier PAM4 transmission for intra-data center
optical interconnects,” IEEE Photon. Technol. Lett., vol. 29, no. 3, pp. 314-
317, Feb. 2017.
[116] S. Mieda, N. Yokota, R. Isshiki, W. Kobayashi, and H. Yasaka, “Frequency
response control of semiconductor laser using hybrid modulation scheme,”
Opt. Exp., vol. 24, no. 22, pp. 25824–25831, 2016.
[117] T. Tadokoro, W. Kobayashi, T. Fujisawa, T. Yamanaka, and F. Kano, “Highspeed modulation lasers for 100GbE applications,” in Proc. Opt. Fiber
Comm. Conf., LA, CA, USA, 2011, Art. no. OWD1.
[118] Y. C. Lu, J. Chen, K. M. Feng, P. C. Yeh, T. Y. Huang, W. R. Peng, M. F.
Huang, and C. C. Wei, “Improved SPM tolerance and cost-effective phase
modulation duobinary transmission over 230 km standard single-mode fiber
using a single Mach-Zender modulator,” IEEE Photon. Technol. Lett., vol.
17, no. 12, pp. 2754–2756, Dec. 2005.
[119] H. Venghaus and N. Grote, Fibre Optic Communication, 2nd ed., Berlin,
Germany: Springer, 2017.
[120] G. Katz and E. Sonkin, “Level optimization of PAM-4 transmission with
signal-dependent noise,” IEEE Photon. J., vol. 11, no. 1, Feb. 2019, Art. no.
7200606.
[121] H. Virtanen, T. Uusitalo, and M. Dumitrescu, “Simulation studies of DFB
laser longitudinal structures for narrow linewidth emission,” Optic. Quant.
Electron., vol. 49, no. 160, pp. 1–13, 2017.
[122] M. M. Bouchene and R. Hamdi, “The effect of facets reflectivity on the static
characteristics of (DFB) semiconductor laser,” in Proc. CISTEM, Alger,
Algerie, 2018, Art. no. 202.
[123] Y. G. Zhao, X. Luo, D. Tran, Q. Hang, P. Weber, T. Hang, R. K. Graichen, N.
Nuttall, R. Cendejas, A. Nikolov, and R. Dutt, “High-power and low-noise
DFB semiconductor lasers for RF photonic links,” in Proc. IEEE Avi.,FiberOpt. Photon. Dig. CD, Cocoa Beach, FL, USA, 2012, Art. no. WD3.
[124] G. P. Agrawal and N. K. Dutta, Semiconductor Lasers, 2nd ed., Van Nostrand
R., Ed., New York, NY, USA: Van Nostrand Reinhold, 1993.
[125] M. F. Ferreira, J. F. Rocha, and J. L. Pinto, “FP and DFB semiconductor
lasers with arbitrary external optical feedback,” in Proc. SPIE OE/FIBERS,
Boston, USA, 1989, pp. 33–44.
[126] M. Dumitrescu, T. Uusitalo, H. Virtanen, A. Laakso, P. Bardella, and I.
Montrosset, “Simulation of photon-photon resonance enhanced direct
modulation bandwidth of DFB lasers,” in Proc. NUSOD, Sydney, Australia,
2016, Art. no. TuP12.
[127] T. Uusitalo, H. Virtanen, P. Bardella, and M. Dumitrescu, “Analysis of the
photon-photon resonance influence on the direct modulation bandwidth of
dual-longitudinal-mode distributed feedback lasers,” Optic. Quant.
Electron., vol. 49, no. 46, pp. 1–4, 2017.
[128] S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N.
Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB
laser array module for a future 100-Gb/s Ethernet transceiver,” IEEE J. Sel.
Topics Quantum Electron., vol. 17, no. 5, pp. 1191-1197, Sep./Oct. 2011.
[129] Y. T. Han, O. K. Kwon, D. H. Lee, C. W. Lee, Y. A. Leem, J. U. Shin, S. H.
Park, and Y. Baek, “A cost-effective 25-Gb/s EML TOSA using all-in-one
FPCB wiring and metal optical bench,” Opt. Exp., vol. 21, no. 22, pp. 26962-
26971, Oct. 2013.
[130] O. K. Kwon, Y. T. Han, Y. S. Baek, and Y. C. Chung, “Improvement of
modulation bandwidth in electroabsorption-modulated laser by utilizing the
resonance property in bonding wire,” Opt. Exp., vol. 20, no. 11, pp. 11806-
11812, May 2012.
[131] J. S. Choe, Y. H. Kwon, J. S. Sim, S. B. Kim, and M. H. Lee, “40 Gbps
electroabsorption modulated DFB laser with tilted facet formed by dry
etching,” in Proc. IEEE 19th ICIPRM, Matsue, Japan, 2007, Art. no. PB16.
[132] W. D. Sacher, E. J. Zhang, B. A. Kruger, and J. K. S. Poon, “High-speed laser
modulation beyond the relaxation resonance frequency limit,” Opt. Exp., vol.
18, no. 7, pp. 7047-7054, Mar. 2010.
[133] B. Zhao, T. R. Chen, and A. Yariv, “The gain and carrier density in
semiconductor lasers under steady-state and transient conditions,” IEEE J.
Quantum Electron., vol. 28, no. 6, pp. 1479-1486, Jun. 1992.
[134] U. Troppenz, M. Narodovitch, C. Kottke, G. Przyrembel, W. D. Molzow, A.
Sigmund, H. G. Bach, and M. Moehrle, “1.3 μm electroabsorption modulated
lasers for PAM4/PAM8 single channel 100 Gb/s,” in Proc. 26th IPRM,
Montpellier, France, 2014, Art. no. Th-B2-5.
[135] F. Chang, Datacenter Connectivity Technologies: Principles and Practice,
Gistrup, Denmark: River Publishers, 2017.
[136] B. H. Park I. Kim, B. K. Kang, Y. D. Bae, S. M. Lee, Y. H. Kim, D. H. Jang,
and T. I. Kim, “Investigation of optical feedback in high speed
electroabsorption modulated lasers with window region,” IEEE Photon.
Technol. Lett., vol. 17, no. 4, pp. 777-779, Apr. 2005.