本研究是探討以溶膠凝膠法製備稀土元素釹摻雜氧化鋅。將Nd：ZnO試片先經熱退火處理，並由場發射掃描式電子顯微(FE-SEM)、X光繞射譜線(XRD)、拉曼散射光譜(Raman)和光激發螢光光譜(PL)分析。以光源為He-Cd雷射(325nm)的光激發螢光光譜量測，發現Nd：ZnO除了因氧化鋅本身能隙發光於3.29eV (377nm)與缺陷發光外，在沒有摻雜其他共活化物的條件下，成功激發出900 nm紅外光螢光訊號。此紅外光是因為電子由Nd3+的能階4F3/2 →4I9/2躍遷所致。此紅外光發光訊號在氧氣氛下退火400℃，會有較佳的訊號強度。Nd：ZnO在熱退火處理時，紅外光發光強度也會隨退火溫度升高而有變化。而從XRD中發現，在高溫退火後會有Nd2O3的形成，對紅外光發光也有一定的影響。

We report the growth and characterization of neodymium doped ZnO prepared by sol-gel method. As-grown and annealed sample were analyzed by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman Scattering Spectroscopy (Raman), and Photoluminescence (PL). PL study of Nd:ZnO by using a He-Cd laser at 325 nm shows bandgap emission at 377 nm and defect related luminescence. Nd:ZnO also shows luminescence of Nd3+ near 890 nm by using He-Cd laser. The infrared emission is due to the electrons transition from 4F3/2 to 4I9/2 of Nd3+. Nd:ZnO annealed at 400℃ shows stronger luminescence of Nd3+. The infrared emission of Nd3+ changed its intensity with variation of annealing temperature. XRD shows Nd2O3 appears when Nd:ZnO annealed at high temperature and it will influence luminescence of Nd3+.

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