研究生: |
張琮偉 Tsung-Wei Chang |
---|---|
論文名稱: |
硒化鋅鈹錳(ZnBeMnSe)光學特性之研究 Optical Characterization of ZnBeMnSe Mixed Crystal |
指導教授: |
黃鶯聲
Ying-sheng Huang |
口試委員: |
陳永芳
none 程光蛟 none 孫澄源 none |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2007 |
畢業學年度: | 95 |
語文別: | 中文 |
論文頁數: | 75 |
中文關鍵詞: | 硒化鋅鈹錳(ZnBeMnSe)光學特性之研究 |
外文關鍵詞: | Optical Characterization of ZnBeMnSe Mixed Cryst |
相關次數: | 點閱:283 下載:1 |
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本論文主要利用無接點電場調制反射(CER)、光激發螢光光譜(PL)、以及表面光電壓(SPS)等量測技術,研究隨溫度變化之稀量磁性半導體 (Diluted magnetic semiconductor)之Ⅱ-Ⅵ族四元化合物ZnBeMnSe的一系列樣品的光學特性。
本論文中所探討的樣品均是利用高壓布里奇曼法 (High-pressure Bridgman method)成長而成,其錳的成分範圍為5%~20%。首先利用表面光電壓技術在室溫下檢測其樣品的表面狀態。而PL光譜在低溫下,可觀察到激子躍遷訊號、施體受體對以及錳正二價離子在陽離子晶格中從4T1 (4G) 至 6A1 (6S) 的發光訊號。此外,CER光譜清楚顯示能隙附近的躍遷訊號。藉由這三種量測,以CER量測譜線在線型吻合後所得到的結果而決定出能隙躍遷訊號。再比較PL的峰值訊號和SPS的譜線所得到的躍遷訊號後發現是相當吻合。根據溫度變化所得到的躍遷訊號和展寬係數,皆有討論。
This paper deals with the investigation of temperature dependence of the near band-edge transitions of a series of diluted magnetic semiconductor Zn0.95-xBe0.05MnxSe mixed crystals using contactless electroreflectance (CER) , photoreflectance (PR) and photoluminescence(PL) and Surface Photovoltage Spectroscopy (SPS) in the temperature range of 15 to 400 K. The crystals were grown by the modified high pressure Bridgman method from the melt for 0.05 < x < 0.2. Room-temperature SPS has been used as a diagnostic technique for checking the surface condition of the sample. Typical PL spectrum at low temperature consists of free exciton line, an edge emission due to recombination of shallow donor-acceptor pairs, and the emission transition 4T1 (4G) →6A1 (6S) in Mn2+ ion at cation lattice site. The CER spectrum reflects the energetic distribution of states. So the near band edge transition energies are determined by analyzing the CER spectra. The peak positions of the exciton emission lines in the PL spectra correspond quite well to the energies of the fundamental transition determined by SPS and CER data. The parameters that describe the temperature dependence of the transition energy and broadening parameter of the fundamental band-edge exciton have been evaluated and discussed.
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